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A 45GHz $f_{T}\;and\;50GHz\;f_{max}$ SiGe BiCMOS Technology Development for Wireless Communication ICs  

Hwang Seok-Hee (Technology Development, SYS.LSI Division, Semiconductor Business, Samsung Electronics)
Cho Dae-Hyung (Technology Development, SYS.LSI Division, Semiconductor Business, Samsung Electronics)
Park Kang-Wook (Technology Development, SYS.LSI Division, Semiconductor Business, Samsung Electronics)
Yi Sang-Don (Technology Development, SYS.LSI Division, Semiconductor Business, Samsung Electronics)
Kim Nam-Ju (DongbuAnam Semiconductor)
Publication Information
Journal of the Institute of Electronics Engineers of Korea SD / v.42, no.9, 2005 , pp. 1-8 More about this Journal
Abstract
A $0.35\mu$m SiGe BiCMOS fabrication process has been timely developed, which is aiming at wireless RF ICs development and fast growing SiGe RF market. With non-selective SiGe epilayer, SiGe HBTs in this process used trapezoidal Ge base profile for the enhanced AC performance via Ge induced bandgap niuoin. The characteristics of hFE 100, $f_{T}\;45GHz,\;F_{max}\;50GHz,\;NF_{min}\;0.8dB$ have been obtained by optimizing not only SiGe base profile but also RTA condition after emitter polysilicon deposition, which enables the SiGe technology competition against the worldwide cutting edge SiGe BiCMOS technology. In addition, the process incorporates the CMOS logic, which is fully compatible with $0.35\mu$m pure logic technology. High Q passive elements are also provided for high precision analog circuit designs, and their quality factors of W(1pF) and inductor(2nH) are 80, 12.5, respectively.
Keywords
SiGe; BiCMOS; HBT; trapezoida; 500Hz;
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