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Optical Properties of ZnO Thin Films deposited by Pulsed Laser Deposition  

Kang, Seong-Jun (Dept of Electrical and Semiconductor Engineering, Chonnam National University)
Joung, Yang-Hee (Dept of Electrical and Semiconductor Engineering, Chonnam National University)
Yoon, Yung-Sup (Dept. of Electronics Engineering, Inha University)
Publication Information
Journal of the Institute of Electronics Engineers of Korea SD / v.44, no.5, 2007 , pp. 15-20 More about this Journal
Abstract
We fabricated ZnO thin films on quartz substrate using pulsed laser deposition method and investigated structural and optical properties of ZnO thin films with various substrate temperatures. Regardless of the substrate temperature variation, all ZnO thin films had grown to (002) and the thin film deposited at 400 $^{\circ}C$ exhibited an excellent crystallinity having 0.24$^{\circ}$ of Full-Width-Half-Maximum (FWHM). In the result of photoluminescence property, UV and deep-level emission peaks were observed in all ZnO films and the emission peaks were changed with various substrate temperatures. An highest UV emission was exhibited on the specimen deposited at 400 $^{\circ}C$ and the FWHM of UV peak was 14 nm. The optical transmittance was about 85 % in visible region regardless of the substrate temperature. The comparison result of the bandgap energies obtained from optical transmittance and UV emission centers, the two values were about the same. From these results, it is found that UV emission center has close relationship with near band edge emission of ZnO thin film.
Keywords
ZnO Thin Film; PLD; Photoluminescence; Transmittance; Energy band gap;
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