• The Journal of Korean Institute of Communications and Information Sciences
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• v.38A no.12
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• pp.1079-1085
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• 2013

Due to the limited power supply resources, it is essential that the minimization of algorithmic operation and the reduction of the hardware logical-resources in the design of the satellite transponder. It is also required that the transponder process the signals of various bandwidth efficiently, that is suitble for the SDR-based implementation. This paper proposes a variable rate down sampler which can provide variable bandwidth and data rate for carrier, ranging and sub-band command signals respectively. The proposed down sampler can provide multiple $2^M$ decimated outputs from a single half band filter with recursive arithmetic architecture, which can minimize the hardware resources as well as the arithmetic operations. The algorithm for hardware implementation as well as the analysis for the passband flatness and aliasing is presented and varified by the FPGA implementation.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.25 no.4
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• pp.393-400
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• 2014

In this paper, we have designed the transmitter for earth station terminal operating with military geostationary satellite on Ka-band that is complied with MIL-STD-188-164A. The designed antenna of this terminal is dual-offset gregorian reflector which is consist of corrugated horn and iris polarizer, othermode transducer. This antenna meets radiation pattern and transmit EIRP spectral density requirements in this standard. The designed RF systems of this terminal are consist of Block Up Converter(BUC) converting frequency band from IF to Ka band and SSPA having low-power consumption and compact light-weight using the pHEMT MMIC compound devices. This RF systems applied with VSWR, spurious/harmonic suppression, output flatness and phase noise requirement in this standard.

• 한국정보통신설비학회:학술대회논문집
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• 2004.08a
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• pp.369-372
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• 2004

In this paper, a low noise amplifier (LNA) in receiver of Low Noise Block Down Converter (LNB) for direct broadcasting service (DBS) is implemented by using GaAs HEMT The LNA is designed for operation between 10.7GHz-12.7GHz. The LNA consists of input, output matching circuits, DC-blocks and RF-chokes. The result of simulation of the LNA shows that a noise figure is less than 1.4dB and a gain is gloater than 9.2dB in the bandwidth of 10.7 to 12.7GHz with good flatness of 0. ldB

• Electronics and Telecommunications Trends
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• v.3 no.4
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• pp.3-12
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• 1988

Epilayer growing process has been recognized as a key technology for successful GaAs based devices and integrations. These may include HEMT, multiple quantum well structures, band gap engineering, and quantum confinement heterostructures. The fabrication of epilayers in these devices must meet very stringent requirements in terms of crystallinity, composition, film thickness and interface quality. In particular, the quality of interfaces is getting more important because the film thickness, and flatness, roughness and stability at interface of ultrathin films cause critical effects on the device performance. This article reviews the current status of modern epitaxial techniques which have been developed in the last few years. First, the new techniques PLE, GI, MEE, TSL based on MBE technique will be reviewed and their technical importance will be stressed. Secondly, MOMBE, GSMBE, CBE which combine the advantages of MBE and MOCVD will also be discussed. Thirdly, the new sophisticated epitaxial technique, ALE, of which mechanism is totally different from others, will also be reviewed. Finally, areas which should be exploited more extensively to accomplish these techniques will be addressed.

• ETRI Journal
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• v.34 no.2
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• pp.210-215
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• 2012

In this paper, a group delay time controller (GDTC) is proposed based on a reflection topology employing a parallel resonator as the reflection termination. The design equations of the proposed GDTC have been derived and validated by simulation and experimental results. The group delay time can be varied by varying the capacitance and inductance at an operating frequency. To show the validity of the proposed circuit, an experiment was performed for a wideband code division multiple access downlink band operating at 2.11 GHz to 2.17 GHz. According to the experiment, a group delay time variation of $3{\pm}0.17$ ns over bandwidth of 60 MHz with excellent flatness is obtained.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.252.1-252.1
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• 2013

Hexagonal boron nitride (h-BN) is a two dimensional material which has high band-gap, flatness and inert properties. This properties are used various applications such as dielectric for electronic device, protective coating and ultra violet emitter so on. 1) In this report, we were growing h-BN sheet directly on sapphire 2"wafer. Ammonia borane (H3BNH3) and nickel were deposited on sapphire wafer by evaporate method. We used nickel film as a sub catalyst to make h-BN sheet growth. 2) During annealing process, ammonia borane moved to sapphire surface through the nickel grain boundary. 3) Synthesized h-BN sheet was confirmed by raman spectroscopy (FWHM: ~30cm-1) and layered structure was defined by cross TEM (~10 layer). Also we controlled number of layer by using of different nickel and ammonia borane thickness. This nickel film supported h-BN growth method may propose fully and directly growing on sapphire. And using deposited ammonia borane and nickel films is scalable and controllable the thickness for h-BN layer number controlling.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.16 no.2 s.93
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• pp.189-193
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• 2005

In this paper, we propose a direct conversion double-balanced down-converter fer MB-OFDM W system, which is implemented using $0.18\;{\mu}m$ CMOS technology and its measurement results are shown. The proposed down-converter adopts a resistive current-source instead of general transconductance stage using MOS transistor to achieve wideband characteristics over RF input frequency band $3\~5\;GHz$ with good gain flatness. The measured conversion gain is more than +3 dB, and gain flatness is less than 3 dB for three UWB channels. The dc consumption of this work is only 0.89 mA from 1.8 V power supply, leading to the low-power W application.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.29 no.6
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• pp.401-406
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• 2018

In this paper, we present E-band bond-wire modeling and a matching network to compensate for the effect of the bond-wire. The impedance of the bond-wires is extracted using three-dimensional electromagnetic simulation. The matching network was designed using a simple structure. The implemented matching network was verified with a commercial 71~81 GHz LNA IC and an interconnection based on the WR-12 waveguide. The matching network increases the transmission coefficient of the system by up to 4.5 dB, power gain by up to 3.12 dB, $P_{1dB}$ by up to 2.2 dB, and improves the gain flatness by ${\pm}1.07dB$.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.16 no.9 s.100
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• pp.941-948
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• 2005

In this paper, we have proposed a Ultra-Wideband slot notch antenna by using a semi-circular extension. The proposed antenna cover the entire UWB band(3.1${\~}$10.6 GHz) and notch out the IEEE 802.1la frequency band(5.15${\~}$5.825 GHz) by inserting a $\lambda$/4 length slot into the patch. A prototype antenna was fabricated on FR-4( ${\epsilon}_r$ =4.4, substrate thickness=0.8 mm) and measured for VSWR characteristics. The measured notched frequency variations versus frequency for different slot length. The path loss and group delay were measured. The proposed antenna also show a good gain flatness(1.9 dBi) except the IEEE 802.1la frequency band.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.24 no.8B
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• pp.1464-1471
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• 1999

A wide-band high power amplifier to use for radiated electromagnetic field immunity testing of EMS(Electromagnetic Susceptibility) standards has to meet IEC1000-4-3 specification in the frequency bandwidth of 80MHz to 1000MHz. The power amplifier to be described in this paper consists of driving and power stages with wide-band matched circuits by estimated impedances. The mismatching protection circuit is inserted in it to prevent from damage of power device when the output port of power amplifier is opened or shorted by user's mistake. The characteristics of the power amplifier are obtained output power over 100watts, gain over 40dB and flatness of $\pm$0.3dB in the frequency range of 80 ~300MHz. The harmonics suppression characteristics is measured over 20dBc. This wide-band high power amplifier can be useful fur radiated electromagnetic field immunity testing of IEC 1000-4-3 standard.