• 제목/요약/키워드: Avalanche Effect

검색결과 54건 처리시간 0.021초

Drain-current Modeling of Sub-70-nm PMOSFETs Dependent on Hot-carrier Stress Bias Conditions

  • Lim, In Eui;Jhon, Heesauk;Yoon, Gyuhan;Choi, Woo Young
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제17권1호
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    • pp.94-100
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    • 2017
  • Stress drain bias dependent current model is proposed for sub-70-nm p-channel metal-oxide semiconductor field-effect transistors (pMOSFETs) under drain-avalanche-hot-carrier (DAHC-) mechanism. The proposed model describes the both on-current and off-current degradation by using two device parameters: channel length variation (${\Delta}L_{ch}$) and threshold voltage shift (${\Delta}V_{th}$). Also, it is a simple and effective model of predicting reliable circuit operation and standby power consumption.

Super-High-Speed Lightwave Demodulation using the Nonlinearities of an Avalanche Photodiode

  • Park, Young-Kyu
    • KIEE International Transactions on Electrophysics and Applications
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    • 제2C권5호
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    • pp.273-278
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    • 2002
  • Even though the modulating signal frequency of the light is too high to detect directly, the signal can be extracted by frequency conversion at the same time as the detection by means of the non-linearity of the APD. An analysis is presented for super-high-speed optical demodulation by an APD with electronic mixing. A normalized gain is defined to evaluate the performance of the frequency conversion demodulation. The nonlinear effect of the internal capacitance was included in the small signal circuit analysis. We showed theoretically and experimentally that the normalized gain is dependent on the down converted difference frequency component. In the experiment, the down converted different frequency outputs became larger than the directly detected original signal for the applied local signal of 20㏈m.

Resonance Phenomenon and Its Effects of Laser Texture Disk

  • Choa, Sung-Hoon;Wang, Geng
    • Journal of Mechanical Science and Technology
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    • 제14권7호
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    • pp.744-751
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    • 2000
  • To achieve lower flying height for high areal recording density, the laser zone texturing of the disk needs to be designed to reduce glide height. One problem of the laser bump design is that the regular laser bump pattern often produces glide resonance phenomenon, which leads to failure of the glide height test. However, it was found in this study that glide resonance is an intrinsic problem of the glide head used and resonance phenomenon depends on the type of the head slider, that is, the natural frequency of the slider body. Therefore, higher glide height or glide failure caused by glide resonance does not lead to head/media interface problem in the real drive operating conditions in which the data head is used. Pseudo-random bump pattern greatly reduces the glide resonance. Smaller bump pitch will also help to reduce the glide resonance. However, as bump spacing becomes smaller, glide height will be increased due to increased air pressure developed around the bumps. Lowering bump height is the most effect way to reduce glide avalanche.

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Reversible Magnetization of Co Doped $BaFe_2As_2$

  • Choi, Chang-Ho;Kim, Soo-Hyun;Choi, Ki-Young;Jung, Myung-Hwa;Wang, X.F.;Chen, X.H.;Wang, X.L.;Lee, Sung-Ik
    • 한국초전도학회:학술대회논문집
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    • 한국초전도학회 2009년도 Korea Superconductivity Society Meeting 2009
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    • pp.33-33
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    • 2009
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An Improved Fast and Secure Hash Algorithm

  • Agarwal, Siddharth;Rungta, Abhinav;Padmavathy, R.;Shankar, Mayank;Rajan, Nipun
    • Journal of Information Processing Systems
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    • 제8권1호
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    • pp.119-132
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    • 2012
  • Recently, a fast and secure hash function SFHA - 256 has been proposed and claimed as more secure and as having a better performance than the SHA - 256. In this paper an improved version of SFHA - 256 is proposed and analyzed using two parameters, namely the avalanche effect and uniform deviation. The experimental results and further analysis ensures the performance of the newly proposed and improved SFHA-256. From the analysis it can be concluded that the newly proposed algorithm is more secure, efficient, and practical.

VBIC Model Application and Parameter Extraction and Optimization for SiGe HBT

  • Lee, Sang-Heung;Park, Chan-Woo;Lee, Seung-Yun;Lee, Ja-Yol;Kang, Jin-Yeong
    • 한국통신학회논문지
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    • 제28권8A호
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    • pp.650-656
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    • 2003
  • In 1995, a group of representatives from the integrated circuits and computer-aided design industries presented a industry standard bipolar model called the VBIC model. The VBIC model includes the improved Early effect, quasi-saturation, substrate parasitic, avalanche multiplication, and self-heating which are not available in the conventional SGP model. This paper applies VBIC model for SiGe HBT device and develops an accurate and efficient methodology to extract all the DC and AC parameters of the VBIC model for SiGe HBT device at room temperature. Simulated results by the extracted VBIC model parameter are compared with the measurement data and show very good agreement in both DC and s-parameters prediction.

APD를 사용하는 광통신 시스템 수신기에서 심벌간 간섭을 고려할 경우 타이밍 지터에 대한 새로운 해석 (A new analysis on timing jitters in APD receivers of optical communication systems when considering intersymbol interferences)

  • 신요안;은수정;김부균
    • 한국통신학회논문지
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    • 제22권3호
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    • pp.539-546
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    • 1997
  • In this paper, we proposed a new mehtod to analyze the performance degradation by timing jitters in the APD (avalanche photodiode) receivers of intensity modulation/direct detection digital optical communication systems where raised cosine pulse-shaping filters are used to reduce the effect of noise while minimizing intersymbol interferences. The proposed analytical method is an extension of an analytical method we have already developed for pin diode receivers, and incorporates the effects of APD's multiplication factor and resulting shot noise. Using the proposed analytical method, we derive an approximated power penalty due to timing jitters based on an assumption of Gaussian distribution for timing jitters, and compare with that of the conventional analytical method. The results obtained from the proposed analytical method show that conventional analytical methods underestimate the influence of timing jitters on the reciver performance. The results also show that APD's multiplication factor which optimizes receiver sensitivity is smaller than that obtained by the conventional analytical method.

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$SF_{6}$ 가스중에서 침-평판가극의 전구코로나과정 (Prebreakdown Corona Processes of Point-to-Plane Gap in $SF_{6}$ Gas)

  • 이복희;백용현
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1992년도 춘계학술대회 논문집
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    • pp.140-143
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    • 1992
  • This paper deals with the dielectric behaviors of $SF_{6}$ gas and prebreakdown growth caused by lightning impulse voltages in inhomogeneous field perturbed with a fixed needle-shaped protrusion on the electrode. The measuring interpretation of the external current induced by moving charges is described. The temporal growth of prebreakdown is obserbed by using a shunt and photomultiplier. The prebreakdown processes are initiated by the first streamer corona at a needle protrustion, the flashover of the main gap in the positive polarity is very sensitive to the local field and propagates into the gap with the leader mechanism. It is found that the dependence of the prebreakdown phenomena on the polarity of applied voltages is caused by the effect of space charges. In addition, the proposed measuring techniques are very useful to perform the measurements of avalanche currents, corona discharges in inhomogeneous fields ad partial discharges in voids.

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광전리효과를 고려한 음극성 스트리머 해석 (The Analysis of the Negative Streamer Including Photoionization Effect)

  • 송봉식;민웅기;이석현
    • 대한전기학회논문지:전기물성ㆍ응용부문C
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    • 제50권5호
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    • pp.232-237
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    • 2001
  • The transition avalanche to streamer are presented in atmospheric pressure nitrogen. The results of two-dimensional simulation are obtained by using finite Elements Method combined with Flux Corrected Transport algorithm(FEM-FCT). We modeled the negative streamer which enables to propagate with out and with photoionization. The results of simulation without photoionization and with photoionization are compared. We show that photoionization plays important roles not only in streamer formation but also in streamer propagation.

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The Analysis of Breakdown Voltage for the Double-gate MOSFET Using the Gaussian Doping Distribution

  • Jung, Hak-Kee
    • Journal of information and communication convergence engineering
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    • 제10권2호
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    • pp.200-204
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    • 2012
  • This study has presented the analysis of breakdown voltage for a double-gate metal-oxide semiconductor field-effect transistor (MOSFET) based on the doping distribution of the Gaussian function. The double-gate MOSFET is a next generation transistor that shrinks the short channel effects of the nano-scaled CMOSFET. The degradation of breakdown voltage is a highly important short channel effect with threshold voltage roll-off and an increase in subthreshold swings. The analytical potential distribution derived from Poisson's equation and the Fulop's avalanche breakdown condition have been used to calculate the breakdown voltage of a double-gate MOSFET for the shape of the Gaussian doping distribution. This analytical potential model is in good agreement with the numerical model. Using this model, the breakdown voltage has been analyzed for channel length and doping concentration with parameters such as projected range and standard projected deviation of Gaussian function. As a result, since the breakdown voltage is greatly changed for the shape of the Gaussian function, the channel doping distribution of a double-gate MOSFET has to be carefully designed.