VBIC Model Application and Parameter Extraction and Optimization for SiGe HBT |
Lee, Sang-Heung
(SiGe Device Team, Electronics and Telecommunication Research Institute)
Park, Chan-Woo (Basic Research Division, Electronics and Telecommunication Research Institute) Lee, Seung-Yun (SiGe Device Team, Electronics and Telecommunication Research Institute) Lee, Ja-Yol (SiGe Device Team, Electronics and Telecommunication Research Institute) Kang, Jin-Yeong (SiGe Device Team, Electronics and Telecommunication Research Institute) |
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VBIC95: An improved bipolar transistor molel
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SPICE Early modeling
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An integrated charge-control model of bipolar transistors
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Parameter extraction and optimization for new industry atand VBIC model
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VBIC95: An imroved vertical, IC bipolar transistor model
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The behavior of Ti silicidation on Si/SiGe/Si base and its effect on base resistance and fmax in SiGe hetero-junction bipolar transistors
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ScienceOn |