• 한국전기전자재료학회논문지
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• 제28권7호
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• pp.433-438
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• 2015

Zinc tin oxide transparent thin film transistors (ZTO TTFTs) were fabricated by using $n^+$ Si wafers as gate electrodes. Indium (In), aluminum (Al), indium tin oxide (ITO), silver (Ag), and gold (Au) were employed for source and drain electrodes, and the mobility and the threshold voltage of ZTO TTFTs were observed as a function of electrode. The ZTO TTFTs adopting In as electrodes showed the highest mobility and the lowest threshold voltage. It was shown that Ag and Au are not suitable for the electrodes of ZTO TTFTs. As the results of this study, it is considered that the interface properties of electrode/ZTO are more influential in the properties of ZTO TTFTs than the conductivity of electrode.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2006년도 하계종합학술대회
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• pp.481-482
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• 2006

We fabricated pentacene organic thin film transistor with good uniformity. And we extracted contact resistance in organic thin film transistors from the plot of the inverse of drain current versus channel length by extrapolating the curve to a channel length of zero, and multiplying by drain-source voltage. Extracted contact resistance is about $70K{\Omega}$ at gate-drain voltage of -20 V

• 한국진공학회지
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• 제17권5호
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• pp.466-472
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• 2008

퍼플골드는 78wt%Au-22wt%Al로 이루어진 합금으로 화학식은 $AuAl_2$로 표현된다. 최근 화이트골드, 핑크골드와 더불어 특유의 적자색 (보라색)이 나는 유색골드의 하나로 장신구나 의장용 소재로 활용되고 있다. 퍼플골드는 Au와 Al의 중간상으로 연성과 주조성이 나쁜 특성이 있어 단조와 주조작업을 통하여 원하는 형상의 퍼플골드를 얻기 힘든 단점이 있다. 따라서 절단과 연마공정만으로 최종제품을 제작하거나 박막으로 증착하여 의장용 소재로 활용하는 것이 가능하다. 본 연구는 순수한 Au와 Al을 소오스로 각각 200nm$SiO_2$/Si기판에 78:22의 무게비로 증착시킨 후 열처리를 시행한 경우와, $AuAl_2$를 용융을 통하여 벌크형으로 얻은 후 이를 소오스로 사용하여 유리기판에 기판온도를 상온으로 유지하면서 진공증착을 통하여 표면처리를 한 경우로 나누어 실험을 진행하였다. 완성된 시편은 육안검사, 미세구조분석, 면저항분석, 색차분석, XRD 분석을 통하여 증착된 퍼플골드의 색과 두께를 위주로 한 물성을 측정하였다. 12.5nmAu/40nmAl/200nm$SiO_2$/Si 구조로 제작하고 열처리 한 경우 과도한 표면응집현상이 일어나면서 퍼플골드가 형성되지 않았다. $AuAl_2$ 소오스로부터 직접 열증착한 경우는 벌크상태와 동일한 적자색을 보였으며 퍼플골드의 의장용으로서 심미적 기능이 가능한 것으로 판단되었다.

• 한국재료학회지
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• 제19권12호
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• pp.637-643
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• 2009

In this study, we analyzed the effect of silicon oxynitride matrix on the optical properties of Au nanoparticles dispersed on composite film and explored the effectiveness of the silicon in fine tuning the refractive index of the composite film for applications in optical waveguide devices. The atomic fraction of nitrogen in $SiO_xN_y$ films was controlled by varying the relative flow ratio of nitrogen gas in reactive sputtering and was evaluated optically using an effective medium theory with Bruggeman geometry consisting of a random mixture between $SiO_2$ and $Si_3N_4$. The Au nanoparticles were embedded in the $SiO_xN_y$ matrix by employing the alternating deposition technique and clearly showed an absorption peak due to the excitation of surface plasmon. With increasing nitrogen atomic fraction in the matrix, the surface plasmon resonance wavelength shifted to a longer wavelength (a red-shift) with an enhanced resonance absorption. These characteristics were interpreted using the Maxwell-Garnett effective medium theory. The formation of a guided mode in a slab waveguide consisting of 3 $\mu$m thick Au:$SiO_xN_y$ nanocomposite film was confirmed at the telecommunication wavelength of 1550 nm by prism coupler method and compared with the case of using $SiO_2$ matrix. The use of $SiO_xN_y$ matrix provides an effective way of controlling the mode confinement while maintaining or even enhancing the surface plasmon resonance properties.

• Applied Microscopy
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• 제47권3호
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• pp.208-213
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• 2017

The microstructural changes in Co nanoparticles and an Au-10at.%Pd thin film have been investigated using an in situ heating holder with a micro-electro-mechanical system (MEMS). In Co nanoparticles, two phases (face-centered cubic and hexagonal close-packed crystal structures) were found to coexist at room temperature and microstructures at temperatures, higher than $1,000^{\circ}C$, were observed with a quick response time and significant stability. The actual temperature of each specimen was directly estimated from the changes in the lattice spacing (Bragg-peak separation). For the Au-10at.%Pd thin film, at a set temperature of $680^{\circ}C$, the actual temperature of the sample was estimated to be $1,020^{\circ}C{\pm}123^{\circ}C$. Note that the specimen temperature should be carefully evaluated because of the undesired effects, i.e., the temperature non-uniformity due to the sample design of the MEMS chip, and distortion due to thermal expansion.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 춘계학술대회 논문집 센서 박막재료 반도체재료 기술교육
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• pp.86-89
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• 2002

We give pressure stimulation into organic thin films and then manufacture a device under the accumulation condition that the state surface pressure is 10[mN/m]. In processing of a device manufacture, we can see the process is good from the change of a surface pressure for organic thin films and transfer ratio of area per molecule. The structure of manufactured device is Au/Poly-${\gamma}$ Benzyl $_D$-Glutamate/Al and Au/Poly-${\gamma}$ Benzyl $_D$-Glutamate/Au; the number of accumulated layers is 1, 3, 5 and 7. Also, we then examined of the MIM device by means of I-V. The I-V characteristic of the device is measured from 0 to +2[V]. We determined electrochemical measurement by using cyclic voltammetry with a three-electrode system. LB film accumulated by monolayer on an ITO. In the cyclicvoltammetry, An Ag/AgCl reference electrode, a platinum wire counter electrode and LB film-coated ITO working electrode measured in $LiBF_4$ solution, stable up to 0.9V vs. Ag/AgCl.

• Progress in Superconductivity
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• 제9권1호
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• pp.119-125
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• 2007

We investigated recovery in $Au/YBa_2Cu_3O_7$ (YBCO) thin film meander lines on sapphire substrates. The meander lines were fabricated by patterning YBCO films coated with gold layers. The lines were subjected to simulated AC fault current and then small current was applied for recovery measurements. The samples were immersed in liquid nitrogen during the experiment. After the fault, the resistance decreased linearly, first slowly and then fast to zero. The initial slow decrease was due to the decrease of the meander line temperature, whereas the fast decrease was originated from the transition from the normal state to the superconducting state. The recovery speed depended on the size of samples, and was faster in the smaller samples during the whole period of recovery. The experimental results were analyzed quantitatively with the concept of heat transfer within the sample and to the surrounding liquid nitrogen. A heat balance equation was solved for the initial phase of recovery, and an expression for the time dependence of resistance was obtained. The result agreed with data well.

• 공업화학
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• 제23권3호
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• pp.289-292
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• 2012

용액공정이 가능한 저분자 유기반도체, triethylsilylethynyl anthradithiophene (TES ADT)을 기반으로 한 유기박막 트랜지스터에서 금 전극의 일함수를 제어하기 위해 표면을 자기조립 단분자막(self-assembled monolayers, SAMs)으로 개질하였다. Benzothiol (BT)과 pentafluorobenzothiol (PFBT) 자기조립 단분자막을 이용해 금 전극의 일함수를 조절하고 이를 통해 TES ADT의 HOMO 준위에 대한 정공주입장벽을 최소화 하고자 하였다. 또한, solvent annealing 후처리 공정을 통해 TES ADT 박막의 결정성을 향상시켰고, 이를 PFBT로 개질된 금 전극을 기반으로 한 유기박막 트랜지스터에 적용한 경우 $0.05\;cm^2/Vs$의 높은 전계효과 이동도와 $10^6$의 높은 점멸비를 보고하였다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.711-714
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• 2006

Properties of silicon nitride ($SiN_x$) film including physical and electrical characteristics have been studied for improving the stability of hydrogenated amorphous silicon thin-film transistors (a-Si TFTs) in active-matrix liquid-crystal displays (AMLCDs). The instability of a-Si:H TFTs is estimated by accelerated stress test of both bias-temperature stress and bias-illumination stress. The results show that the deposition conditions of $SiN_x$ films with higher power and lower pressure are the best choice for improving the on-current and stability of TFTs.

• 한국표면공학회지
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• 제53권1호
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• pp.36-42
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• 2020

In this study, two novel methods to measure the surface hardness of anodic oxide films on aluminum alloys are reported. The first method is to impregnate oil-based ink into pores in the anodic oxide film and then to clean the ink on the surface using ethanol, resulting in an impregnation of inks only inside of the pores in anodic oxide film. The second method is to coat the anodic oxide film surface with thin Au layer less than 0.1 ?. Both the ink-impregnating method and Au-coating method provided clear indentation marks on the anodic oxide film surface when it was indented using a pyramidal-diamond penetrator. Thus, Vickers hardness of anodic oxide films on aluminium alloy could be measured successfully and precisely from the anodic film surface. In addition, advantages and disadvantages of the ink-impregnating method and Au-coating method for the measurement of surface hardness of anodic oxide films are discussed.