한국정보디스플레이학회:학술대회논문집

The Korean Infomation Display Society (한국정보디스플레이학회)
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Importance of Gate $SiN_x$ Properties Related to a-Si:H TFT Instability

  • Tsai, Chien-Chien (AUO Technology Center, AU Optronics Corporation) ;
  • Lee, Yeong-Shyang (AUO Technology Center, AU Optronics Corporation) ;
  • Shih, Ching-Chieh (AUO Technology Center, AU Optronics Corporation) ;
  • Hsu, Chung-Yi (AUO Technology Center, AU Optronics Corporation) ;
  • Liang, Chung-Yu (AUO Technology Center, AU Optronics Corporation) ;
  • Lin, Y.M. (AUO Technology Center, AU Optronics Corporation) ;
  • Gan, Feng-Yuan (AUO Technology Center, AU Optronics Corporation)
  • Published : 2006.08.22
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Abstract

Properties of silicon nitride ($SiN_x$) film including physical and electrical characteristics have been studied for improving the stability of hydrogenated amorphous silicon thin-film transistors (a-Si TFTs) in active-matrix liquid-crystal displays (AMLCDs). The instability of a-Si:H TFTs is estimated by accelerated stress test of both bias-temperature stress and bias-illumination stress. The results show that the deposition conditions of $SiN_x$ films with higher power and lower pressure are the best choice for improving the on-current and stability of TFTs.

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