• Title/Summary/Keyword: Au thin film

Search Result 302, Processing Time 0.026 seconds

Influence of Source/Drain Electrodes on the Properties of Zinc Tin Oxide Transparent Thin Film Transistors (Zinc Tin Oxide 투명 박막트랜지스터의 특성에 미치는 소스/드레인 전극의 영향)

  • Ma, Tae Young;Cho, Mu Hee
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.28 no.7
    • /
    • pp.433-438
    • /
    • 2015
  • Zinc tin oxide transparent thin film transistors (ZTO TTFTs) were fabricated by using $n^+$ Si wafers as gate electrodes. Indium (In), aluminum (Al), indium tin oxide (ITO), silver (Ag), and gold (Au) were employed for source and drain electrodes, and the mobility and the threshold voltage of ZTO TTFTs were observed as a function of electrode. The ZTO TTFTs adopting In as electrodes showed the highest mobility and the lowest threshold voltage. It was shown that Ag and Au are not suitable for the electrodes of ZTO TTFTs. As the results of this study, it is considered that the interface properties of electrode/ZTO are more influential in the properties of ZTO TTFTs than the conductivity of electrode.

Extraction of Contact Resistance in Interface Between Au Electrode and Pentacene Thin Film (Au 전극과 pentacene 박막 계면의 contact resistance 측정)

  • Jung, Bo-Chul;Ryu, Gi-Seong;Kim, Yong-Kyu;Song, Chung-Kun
    • Proceedings of the IEEK Conference
    • /
    • 2006.06a
    • /
    • pp.481-482
    • /
    • 2006
  • We fabricated pentacene organic thin film transistor with good uniformity. And we extracted contact resistance in organic thin film transistors from the plot of the inverse of drain current versus channel length by extrapolating the curve to a channel length of zero, and multiplying by drain-source voltage. Extracted contact resistance is about $70K{\Omega}$ at gate-drain voltage of -20 V

  • PDF

The Properties of Au-Al Alloy Thin Films with a Thermal Evaporator for Purple Gold (퍼플골드를 위한 열증착법으로 제조된 Au-Al 합금 박막의 물성연구)

  • Kim, Jun-Hwan;Song, Oh-Sung
    • Journal of the Korean Vacuum Society
    • /
    • v.17 no.5
    • /
    • pp.466-472
    • /
    • 2008
  • Purple Gold is the alloy consisting of 78wt%Au-22wt%Al, and is expressed as a chemical formula, $AuAl_2$. Lately it is being used for the material of accessories or the decorative ornaments, being one of the colored golds having the peculiar purple color, like White Gold and Pink Gold. Purple Gold has the weak point in shaping through casting process due to the bad malleability and castability, being the intermetalic compound of Au and Al. Therefore, it is possible to produce the final product only by the cutting and the grinding process or to use it as a decorative coat with the thin film evaporation. This study implemented two kinds of thin film experiments. One is the case that heat treatment was made after Au and Al deposition evaporated separately with a weight ratio 78:22 on the 200nm$SiO_2$/Si substrate. The other is the case that the surface deposition was made through the vacuum evaporation, keeping the glass substrate temperature remain room temperature, using the bulk $AuAl_2$ as a source. The final film property was measured, focusing on the Purple Gold's color and thickness through the bare eye inspection, the microstructure analysis, the surface resistance analysis, the color difference analysis, and XRD analysis. Purple Gold was not formed, as the excessive surface agglomeration occurred, in case of being produced and treated thermally with 12.5nmAu/40nmAl/200nm$SiO_2$/Si structure. Our results suggest that of Purple Gold films, showing the same purple color as the bulk's, were successfully deposited with the direct thermal evaporation from the $AuAl_2$ bulk source.

Effect of Silicon Oxynitride Matrix on the Optical Properties of Au Nanoparticles Dispersed Composite Film (실리콘 산화질화물 기지상 적용에 따른 Au 나노입자 분산 복합체 박막의 광학적 특성)

  • Cho, Sung-Hun;Lee, Kyeong-Seok
    • Korean Journal of Materials Research
    • /
    • v.19 no.12
    • /
    • pp.637-643
    • /
    • 2009
  • In this study, we analyzed the effect of silicon oxynitride matrix on the optical properties of Au nanoparticles dispersed on composite film and explored the effectiveness of the silicon in fine tuning the refractive index of the composite film for applications in optical waveguide devices. The atomic fraction of nitrogen in $SiO_xN_y$ films was controlled by varying the relative flow ratio of nitrogen gas in reactive sputtering and was evaluated optically using an effective medium theory with Bruggeman geometry consisting of a random mixture between $SiO_2$ and $Si_3N_4$. The Au nanoparticles were embedded in the $SiO_xN_y$ matrix by employing the alternating deposition technique and clearly showed an absorption peak due to the excitation of surface plasmon. With increasing nitrogen atomic fraction in the matrix, the surface plasmon resonance wavelength shifted to a longer wavelength (a red-shift) with an enhanced resonance absorption. These characteristics were interpreted using the Maxwell-Garnett effective medium theory. The formation of a guided mode in a slab waveguide consisting of 3 $\mu$m thick Au:$SiO_xN_y$ nanocomposite film was confirmed at the telecommunication wavelength of 1550 nm by prism coupler method and compared with the case of using $SiO_2$ matrix. The use of $SiO_xN_y$ matrix provides an effective way of controlling the mode confinement while maintaining or even enhancing the surface plasmon resonance properties.

Structural and Morphological Changes of Co Nanoparticles and Au-10at.%Pd Thin Film Studied by in Situ Heating in a Transmission Electron Microscope

  • Ji, Yoon-Beom;Park, Hyun Soon
    • Applied Microscopy
    • /
    • v.47 no.3
    • /
    • pp.208-213
    • /
    • 2017
  • The microstructural changes in Co nanoparticles and an Au-10at.%Pd thin film have been investigated using an in situ heating holder with a micro-electro-mechanical system (MEMS). In Co nanoparticles, two phases (face-centered cubic and hexagonal close-packed crystal structures) were found to coexist at room temperature and microstructures at temperatures, higher than $1,000^{\circ}C$, were observed with a quick response time and significant stability. The actual temperature of each specimen was directly estimated from the changes in the lattice spacing (Bragg-peak separation). For the Au-10at.%Pd thin film, at a set temperature of $680^{\circ}C$, the actual temperature of the sample was estimated to be $1,020^{\circ}C{\pm}123^{\circ}C$. Note that the specimen temperature should be carefully evaluated because of the undesired effects, i.e., the temperature non-uniformity due to the sample design of the MEMS chip, and distortion due to thermal expansion.

A Study on the Electronic Properties of Poly-$\gamma$ Benzyl $_D$-Glutamate Organic Thin Films (Poly-${\gamma}$ Benzyl $_D$-Glutamate 유기박막의 전자이동특성에 관한 연구)

  • Song, Jin-Won;Lee, Kyung-Sup;Lee, Bong-Ju;Gu, Hal-Bon
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2002.05b
    • /
    • pp.86-89
    • /
    • 2002
  • We give pressure stimulation into organic thin films and then manufacture a device under the accumulation condition that the state surface pressure is 10[mN/m]. In processing of a device manufacture, we can see the process is good from the change of a surface pressure for organic thin films and transfer ratio of area per molecule. The structure of manufactured device is Au/Poly-${\gamma}$ Benzyl $_D$-Glutamate/Al and Au/Poly-${\gamma}$ Benzyl $_D$-Glutamate/Au; the number of accumulated layers is 1, 3, 5 and 7. Also, we then examined of the MIM device by means of I-V. The I-V characteristic of the device is measured from 0 to +2[V]. We determined electrochemical measurement by using cyclic voltammetry with a three-electrode system. LB film accumulated by monolayer on an ITO. In the cyclicvoltammetry, An Ag/AgCl reference electrode, a platinum wire counter electrode and LB film-coated ITO working electrode measured in $LiBF_4$ solution, stable up to 0.9V vs. Ag/AgCl.

  • PDF

Analysis on Recovery in Au/YBCO thin Film Meander Lines (Au/YBCO 박막 곡선에서의 회복 분석)

  • Kim, H.R.;Yim, S.W.;Oh, S.Y.;Hyun, O.B.
    • Progress in Superconductivity
    • /
    • v.9 no.1
    • /
    • pp.119-125
    • /
    • 2007
  • We investigated recovery in $Au/YBa_2Cu_3O_7$ (YBCO) thin film meander lines on sapphire substrates. The meander lines were fabricated by patterning YBCO films coated with gold layers. The lines were subjected to simulated AC fault current and then small current was applied for recovery measurements. The samples were immersed in liquid nitrogen during the experiment. After the fault, the resistance decreased linearly, first slowly and then fast to zero. The initial slow decrease was due to the decrease of the meander line temperature, whereas the fast decrease was originated from the transition from the normal state to the superconducting state. The recovery speed depended on the size of samples, and was faster in the smaller samples during the whole period of recovery. The experimental results were analyzed quantitatively with the concept of heat transfer within the sample and to the surrounding liquid nitrogen. A heat balance equation was solved for the initial phase of recovery, and an expression for the time dependence of resistance was obtained. The result agreed with data well.

  • PDF

Control of the Gold Electrode Work Function for High Performance Organic Thin Film Transistors (표면개질된 금 전극의 일함수 조절을 통한 고성능 유기박막 트랜지스터 개발)

  • Park, Yeong Don
    • Applied Chemistry for Engineering
    • /
    • v.23 no.3
    • /
    • pp.289-292
    • /
    • 2012
  • Au electrodes modified with self-assembled monolayers (SAMs) were used to control the work function of source/drain electrodes in triethylsilylethynyl anthradithiophene (TES ADT)-based organic thin film transistors (OTFTs). By using benzothiol (BT) and pentafluorobenzothiol (PFBT) SAMs, the hole injection barrier between Au and the highest occupied molecular orbital (HOMO) of TES ADT was controlled. After a solvent annealing, TES ADT OTFTs with PFBT SAM-treated Au electrodes were found to exhibit high field-effect mobilities of $0.05\;cm^2/Vs$ and on/off current ratios of $10^6$.

Importance of Gate $SiN_x$ Properties Related to a-Si:H TFT Instability

  • Tsai, Chien-Chien;Lee, Yeong-Shyang;Shih, Ching-Chieh;Hsu, Chung-Yi;Liang, Chung-Yu;Lin, Y.M.;Gan, Feng-Yuan
    • 한국정보디스플레이학회:학술대회논문집
    • /
    • 2006.08a
    • /
    • pp.711-714
    • /
    • 2006
  • Properties of silicon nitride ($SiN_x$) film including physical and electrical characteristics have been studied for improving the stability of hydrogenated amorphous silicon thin-film transistors (a-Si TFTs) in active-matrix liquid-crystal displays (AMLCDs). The instability of a-Si:H TFTs is estimated by accelerated stress test of both bias-temperature stress and bias-illumination stress. The results show that the deposition conditions of $SiN_x$ films with higher power and lower pressure are the best choice for improving the on-current and stability of TFTs.

  • PDF

Novel Methods for Measuring the Surface Hardness of Anodic Oxide Films on Aluminum Alloy (알루미늄 합금 양극산화피막의 표면경도 측정법)

  • Moon, Sungmo
    • Journal of the Korean institute of surface engineering
    • /
    • v.53 no.1
    • /
    • pp.36-42
    • /
    • 2020
  • In this study, two novel methods to measure the surface hardness of anodic oxide films on aluminum alloys are reported. The first method is to impregnate oil-based ink into pores in the anodic oxide film and then to clean the ink on the surface using ethanol, resulting in an impregnation of inks only inside of the pores in anodic oxide film. The second method is to coat the anodic oxide film surface with thin Au layer less than 0.1 ?. Both the ink-impregnating method and Au-coating method provided clear indentation marks on the anodic oxide film surface when it was indented using a pyramidal-diamond penetrator. Thus, Vickers hardness of anodic oxide films on aluminium alloy could be measured successfully and precisely from the anodic film surface. In addition, advantages and disadvantages of the ink-impregnating method and Au-coating method for the measurement of surface hardness of anodic oxide films are discussed.