• Journal of the Korean Society for Heat Treatment
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• v.22 no.5
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• pp.290-297
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• 2009

In case of using Asymmetric Bipolar Pulsed DC (ABPD) power generator, thin film is efficiently deposited as ions are getting higher energy by suppressing target poisoning and electric arc. In this article, the mechanical properties of CNx thin films deposited on the STS 316L were compared with DC and ABPD power generators. The CNx thin films deposited with ABPD clearly improved wear resistance by higher ratio of sp3CN as compared with DC. Nb interlayer affected to increase the value of 10N of adhesion between CNx thin films and substrate. But, CNx thin films deposited with ABPD couldn't endure to wear load and decreased wear resistance as the films were too thinner than substrate. Nevertheless the higher substrate bias energy applied to perform the dense films, it wasn't shown benefits about the wear properties from DC sputtering. But, in case of using ABPD sputtering, the wear resistance was largely improved without changing morphology despite of thin films.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.20 no.4
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• pp.793-798
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• 2016

In this work, the memory window characteristics of vertical nanowire device with asymmetric source and drain was analyzed using bipolar junction transistor mode for 1T-DRAM application. A gate-all-around (GAA) MOSFET with higher doping concentration in the drain region than in the source region was used. The shape of GAA MOSFET was a tapered vertical structure that the source area is larger than the drain area. From hysteresis curves using bipolar junction mode, the memory windows were 1.08V in the forward mode and 0.16V in the reverse mode, respectively. We observed that the latch-up point was larger in the forward mode than in the reverse mode by 0.34V. To confirm the measurement results, the device simulation has been performed and the simulation results were consistent in the measurement ones. We knew that the device structure with higher doping concentration in the drain region was desirable for the 1T-DRAM using bipolar junction mode.

• Proceedings of the Korean Ceranic Society Conference
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• 2000.10a
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• pp.52.1-52
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• 2000

• The Transactions of the Korean Institute of Power Electronics
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• v.27 no.4
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• pp.348-355
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• 2022

A bipolar DC distribution system suffers from an imbalance in voltages when asymmetric loads are connected at the outputs. Dedicated voltage balancers are required to address the imbalance in bipolar voltage levels. However, additional components eventually increase the cost and decrease the efficiency and power density of the system. Therefore, to deal with the imbalance in output voltages without adding any extra components, this study presents a coupled inductor-based voltage balancing technique with a dual-output CLL resonant converter. The proposed coupled inductor does not require extra magnetic components to balance the output voltages because it is the result of resonant inductors of the CLL tank circuit. It can also avoid complex control schemes applied to voltage balancing. Moreover, with the proposed coupled inductor, the CLL converter acquires good features including zero voltage and zero current switching. Detailed analysis of the proposed coupled inductor is presented with different load conditions. A 3.6-kW hardware prototype was built and tested to validate the performance of the proposed coupled inductor-based voltage balancing technique.

• Journal of the Korean Ceramic Society
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• v.48 no.5
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• pp.342-347
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• 2011

Nanocrystalline TiN films were deposited on Si(100) substrate using asymmetric pulsed DC reactive magnetron sputtering. We investigated the growing behavior and the structural properties of TiN films with change of duty cycle and pulsed frequency. Grain size of TiN films were decreased from 87.2 nm to 9.8 nm with decrease of duty cycle. The $2{\theta}$ values for (111) and (200) crystallographic planes of the TiN films were also decreased with decrease of duty cycle. This shift in $2{\theta}$ could be attributed to compressive stress in the TiN coatings. Thus, the change of plasma parameter has a strong influence not only on the microstructure but also on the residual stresses of TiN films.

• The Transactions of the Korean Institute of Power Electronics
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• v.17 no.4
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• pp.306-314
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• 2012

In case of the conventional DC-AC inverter using two DC-DC converters with unipolar output capacitor voltages, for generating the AC output voltage, the output capacitor voltages of its each DC-DC converter must be higher than the DC input voltage. To solve this problem, this paper proposes a single-phase DC-AC inverter using two embedded Z-source converters with bipolar output capacitor voltages. The proposed inverter is composed of two embedded Z-source converters with common DC source and output AC load. The AC output voltage is obtained by the difference of the output capacitor voltages of each converter. Though the output capacitor voltage of converter is relatively low compared to the conventional method, it can be obtained the same AC output voltage. Moreover, by controlling asymmetrically the output capacitor voltage, the AC output voltage of the proposed system is higher than the DC input voltage. To verify the validity of the proposed system, a DSP(TMS320F28335) based single-phase embedded Z-source DC-AC inverter was made and the PSIM simulation was performed under the condition of the DC source 38V. As controlled symmetrically and asymmetrically the output capacitor voltages of each converter, the proposed inverter could produce the AC output voltage with sinusoidal waveform. Particularly, in case of asymmetric control, a higher AC output voltage was obtained. Finally, the efficiency of the proposed system was measured as 95% and 97% respectively in case of symmetric and asymmetric control.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.84-85
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• 2008

In this paper, differential cross coupled LC VCOs with two noise frequency filtering techniques are proposed. Both VCOs are based on symmetric capacitor with asymmetric inductor tank structure. The VCO using low pass filtering technique shows low phase noise of -130.40 dBc/Hz at 1 MHz offset when the center frequency is 1.619 GHz. And the other VCO using band pass filtering technique shows -127.93 dBc/Hz at 1 MHz offset frequency when center frequency is 1.604 GHz. Two noise frequency filtering techniques are approached with different target.

• Journal of the Korean Ceramic Society
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• v.38 no.1
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• pp.61-67
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• 2001

비대칭 펄스 직류 반응성 스퍼터링을 이용하여 상온에서 Si(100) 기판 위에 AlN 박막을 증착하였다. 100 kHz에서 200 kHz까지 펄스 주파수의 변화 및 70%에서 90%까지 duty cycle의 변화에 따른 아크 발생과 AlN 박막의 결정성 그리고 미세 조직을 관찰하였다. Duty cycle에서 양의 펄스 유지 시간이 증가함에 따라 증착 중에 아크 발생 빈도가 현저히 감소하였고 AlN 박막의 입자 크기와 결정상의 c축 배향성이 증가하였다. 반면에 펄스 주파수 변화에 따른 아크 발생은 일정한 경향을 나타내지 않았지만 전반적으로 많은 아크가 발생했다. 아크 발생 빈도가 늘어남에 따라 c축 배향성이 감소하였다. 양의 펄스 유지 시간과 펄스 주파수가 감소함에 따라 박막의 증착 속도는 증가하였으며 440$\AA$/min의 높은 증착 속도를 나타냈다.

• Journal of The Korean Astronomical Society
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• v.38 no.2
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• pp.219-222
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• 2005

We present the high-resolution (2"-4") images of the molecular envelopes surrounding the evolved stars, V Hya, VY CMa, and ${\pi}^1$ Gru observed with the Submillimeter Array. The CO J=2-1 and 3-2 images of the carbon star V Hya show that the circumstellar structure of this star consists of three kinematic components; there is a flattened disk-like envelope that is expanding with a velocity of ${\~}16 km\;s^{-1}$, the second component is the medium-velocity wind having a deprojected velocity of 40-120 km $s^{-l}$ moving along the disk plane, and the third one is the bipolar molecular jet having an extreme velocity of 70-185 km $s^{-l}$. The axis of this high velocity jet is perpendicular to the plane of the disk-like envelope. We found that the circumstellar structure of the S-star ${\pi}^1$ Gru traced by the CO J =2-1 resembles that of V Hya quite closely; the star is surrounded by the expanding disk-like envelope and is driving the medium-velocity wind along the disk plane. We also obtained the excellent images of VY CMa with the CO and $^{13}CO$ J=2-1 and $SO\;6_5-5_4$ lines. The maps of three molecular lines show that the envelope has a significant velocity gradient in the east-west direction, suggesting that the envelope surrounding VY CMa is also flattened and expanding along its radial direction. The high-resolution images obtained with the SMA show that some AGB stars are associated with the asymmetric mass loss including the equatorial wind and bipolar jet.

• Transactions on Electrical and Electronic Materials
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• v.6 no.4
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• pp.177-185
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• 2005

Fatigue characteristics of lead zirconate titanate (PZT) films deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition (ECR-PECVD) were investigated. The fatigue characteristics were investigated with respect to PZT film thickness, domain structure, fatigue pulse height, temperature, electrode materials and electrode configurations. The used top and bottom electrode materials were Pt and $RuO_2$. In the fatigue characteristics with fatigue pulse height and PZT film thickness, the fatigue rates are independent of the applied fatigue pulse height at the electric field regions to saturate the P-E hysteresis and polarization $(P^*,\;P^A)$ characteristics. The unipolar and bipolar fatigue characteristics of PZT capacitors with four different electrode configurations $(Pt//Pt,\;Pt//RuO_2,\;RuO_2//Pt,\;and\;RuO_2//RuO_2)$ were also investigated. The polarization-shifts during the unipolar fatigue and the temperature dependence of fatigue rate suggest that the migration of charged defects should not be expected in our CVD-PZT films. It seems that the polarization degradations are attributed to the formation of charged defects only at the Pt/PZT interface during the domain switching. The charged defects pin the domain wall at the vicinity of Pt/PZT interface. When the top and bottom electrode configurations are of asymmetric $(Pt//RuO_2,\;RuO_2//Pt)$, the internal fields can be generated by the difference of charged defect densities between top and bottom interfaces.