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http://dx.doi.org/10.4191/kcers.2011.48.5.342

Growing Behavior of Nanocrystalline TiN Films by Asymmetric Pulsed DC Reactive Magnetron Sputtering  

Han, Man-Geun (Department of Advanced Materials Science and Engineering, Mokpo National University)
Chun, Sung-Yong (Department of Advanced Materials Science and Engineering, Mokpo National University)
Publication Information
Journal of the Korean Ceramic Society / v.48, no.5, 2011 , pp. 342-347 More about this Journal
Abstract
Nanocrystalline TiN films were deposited on Si(100) substrate using asymmetric pulsed DC reactive magnetron sputtering. We investigated the growing behavior and the structural properties of TiN films with change of duty cycle and pulsed frequency. Grain size of TiN films were decreased from 87.2 nm to 9.8 nm with decrease of duty cycle. The $2{\theta}$ values for (111) and (200) crystallographic planes of the TiN films were also decreased with decrease of duty cycle. This shift in $2{\theta}$ could be attributed to compressive stress in the TiN coatings. Thus, the change of plasma parameter has a strong influence not only on the microstructure but also on the residual stresses of TiN films.
Keywords
Pulsed sputtering; Asymmetric bipolar; Duty cycle; Pulse frequency;
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Times Cited By KSCI : 4  (Citation Analysis)
Times Cited By SCOPUS : 0
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