• 제목/요약/키워드: Asymmetric bipolar

검색결과 27건 처리시간 0.022초

비대칭 펄스 DC 반응성 스퍼터링 법에 의한 CNx 박막의 기계적 특성에 관한 연구 (A Study on the Mechanical Properties of CNx Thin Films Deposited by Asymmetric Bipolar Pulsed D.C. Sputtering)

  • 김준호;김대욱;차병철;김선광;이병석;전신희;김대일;유용주
    • 열처리공학회지
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    • 제22권5호
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    • pp.290-297
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    • 2009
  • In case of using Asymmetric Bipolar Pulsed DC (ABPD) power generator, thin film is efficiently deposited as ions are getting higher energy by suppressing target poisoning and electric arc. In this article, the mechanical properties of CNx thin films deposited on the STS 316L were compared with DC and ABPD power generators. The CNx thin films deposited with ABPD clearly improved wear resistance by higher ratio of sp3CN as compared with DC. Nb interlayer affected to increase the value of 10N of adhesion between CNx thin films and substrate. But, CNx thin films deposited with ABPD couldn't endure to wear load and decreased wear resistance as the films were too thinner than substrate. Nevertheless the higher substrate bias energy applied to perform the dense films, it wasn't shown benefits about the wear properties from DC sputtering. But, in case of using ABPD sputtering, the wear resistance was largely improved without changing morphology despite of thin films.

비대칭 소스/드레인 수직형 나노와이어 MOSFET의 1T-DRAM 응용을 위한 메모리 윈도우 특성 (Memory window characteristics of vertical nanowire MOSFET with asymmetric source/drain for 1T-DRAM application)

  • 이재훈;박종태
    • 한국정보통신학회논문지
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    • 제20권4호
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    • pp.793-798
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    • 2016
  • 본 연구에서는 1T-DRAM 응용을 위해 Bipolar Junction Transistor 모드 (BJT mode)에서 비대칭 소스/드레인 수직형 나노와이어 소자의 순방향 및 역방향 메모리 윈도우 특성을 분석하였다. 사용된 소자는 드레인 농도가 소스 농도보다 높으며 소스 면적이 드레인 면적보다 큰 사다리꼴의 수직형 gate-all-around (GAA) MOSFET 이다. BJT모드의 순방향 및 역방향 이력곡선 특성으로부터 순방향의 메모리 윈도우는 1.08V이고 역방향의 메모리 윈도우는 0.16V이었다. 또 래치-업 포인트는 순방향이 역방향보다 0.34V 큰 것을 알 수 있었다. 측정 결과를 검증하기 위해 소자 시뮬레이션을 수행하였으며 시뮬레이션 결과는 측정 결과와 일치하는 것을 알 수 있었다. 1T-DRAM에서 BJT 모드를 이용하여 쓰기 동작을 할 때는 드레인 농도가 높은 것이 바람직함을 알 수 있었다.

양극성 DC 배전 시스템 적용을 위한 결합 인덕터 기반의 전압 밸런싱 이중 출력 CLL 공진형 컨버터 (Coupled Inductor Based Voltage Balancing in Dual-Output CLL Resonant Converter for Bipolar DC Distribution System)

  • 이승훈;김정훈;차헌녕
    • 전력전자학회논문지
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    • 제27권4호
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    • pp.348-355
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    • 2022
  • A bipolar DC distribution system suffers from an imbalance in voltages when asymmetric loads are connected at the outputs. Dedicated voltage balancers are required to address the imbalance in bipolar voltage levels. However, additional components eventually increase the cost and decrease the efficiency and power density of the system. Therefore, to deal with the imbalance in output voltages without adding any extra components, this study presents a coupled inductor-based voltage balancing technique with a dual-output CLL resonant converter. The proposed coupled inductor does not require extra magnetic components to balance the output voltages because it is the result of resonant inductors of the CLL tank circuit. It can also avoid complex control schemes applied to voltage balancing. Moreover, with the proposed coupled inductor, the CLL converter acquires good features including zero voltage and zero current switching. Detailed analysis of the proposed coupled inductor is presented with different load conditions. A 3.6-kW hardware prototype was built and tested to validate the performance of the proposed coupled inductor-based voltage balancing technique.

비대칭 펄스 DC 반응성 마그네트론 스퍼터링으로 증착된 나노결정질 TiN 박막의 성장거동 (Growing Behavior of Nanocrystalline TiN Films by Asymmetric Pulsed DC Reactive Magnetron Sputtering)

  • 한만근;전성용
    • 한국세라믹학회지
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    • 제48권5호
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    • pp.342-347
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    • 2011
  • Nanocrystalline TiN films were deposited on Si(100) substrate using asymmetric pulsed DC reactive magnetron sputtering. We investigated the growing behavior and the structural properties of TiN films with change of duty cycle and pulsed frequency. Grain size of TiN films were decreased from 87.2 nm to 9.8 nm with decrease of duty cycle. The $2{\theta}$ values for (111) and (200) crystallographic planes of the TiN films were also decreased with decrease of duty cycle. This shift in $2{\theta}$ could be attributed to compressive stress in the TiN coatings. Thus, the change of plasma parameter has a strong influence not only on the microstructure but also on the residual stresses of TiN films.

비대칭 전압 제어를 이용한 단상 임베디드 Z-소스 DC-AC 인버터 (A Single-Phase Embedded Z-Source DC-AC Inverter by Asymmetric Voltage Control)

  • 오승열;김세진;정영국;임영철
    • 전력전자학회논문지
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    • 제17권4호
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    • pp.306-314
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    • 2012
  • In case of the conventional DC-AC inverter using two DC-DC converters with unipolar output capacitor voltages, for generating the AC output voltage, the output capacitor voltages of its each DC-DC converter must be higher than the DC input voltage. To solve this problem, this paper proposes a single-phase DC-AC inverter using two embedded Z-source converters with bipolar output capacitor voltages. The proposed inverter is composed of two embedded Z-source converters with common DC source and output AC load. The AC output voltage is obtained by the difference of the output capacitor voltages of each converter. Though the output capacitor voltage of converter is relatively low compared to the conventional method, it can be obtained the same AC output voltage. Moreover, by controlling asymmetrically the output capacitor voltage, the AC output voltage of the proposed system is higher than the DC input voltage. To verify the validity of the proposed system, a DSP(TMS320F28335) based single-phase embedded Z-source DC-AC inverter was made and the PSIM simulation was performed under the condition of the DC source 38V. As controlled symmetrically and asymmetrically the output capacitor voltages of each converter, the proposed inverter could produce the AC output voltage with sinusoidal waveform. Particularly, in case of asymmetric control, a higher AC output voltage was obtained. Finally, the efficiency of the proposed system was measured as 95% and 97% respectively in case of symmetric and asymmetric control.

InGaP/GaAs HBT 기반의 필터 기술을 이용한 차동 LC 전압조절발전기의 분석 및 최적화 (Analysis and Optimization of Differential LC VCO with Filtering Technique in IoGaP/GaAs HBT Technology)

  • 전정;왕종;이상열;김남영
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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    • pp.84-85
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    • 2008
  • In this paper, differential cross coupled LC VCOs with two noise frequency filtering techniques are proposed. Both VCOs are based on symmetric capacitor with asymmetric inductor tank structure. The VCO using low pass filtering technique shows low phase noise of -130.40 dBc/Hz at 1 MHz offset when the center frequency is 1.619 GHz. And the other VCO using band pass filtering technique shows -127.93 dBc/Hz at 1 MHz offset frequency when center frequency is 1.604 GHz. Two noise frequency filtering techniques are approached with different target.

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비대칭 펄스 직류 반응성 스퍼터링으로 증착된 AlN 박막의 성장 거동 (Growing Behavior of AlN Thin Film Deposited by Asymmetric Bipolar Pulsed DC Reactive Sputtering)

  • 김주형;이전국;안진호
    • 한국세라믹학회지
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    • 제38권1호
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    • pp.61-67
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    • 2001
  • 비대칭 펄스 직류 반응성 스퍼터링을 이용하여 상온에서 Si(100) 기판 위에 AlN 박막을 증착하였다. 100 kHz에서 200 kHz까지 펄스 주파수의 변화 및 70%에서 90%까지 duty cycle의 변화에 따른 아크 발생과 AlN 박막의 결정성 그리고 미세 조직을 관찰하였다. Duty cycle에서 양의 펄스 유지 시간이 증가함에 따라 증착 중에 아크 발생 빈도가 현저히 감소하였고 AlN 박막의 입자 크기와 결정상의 c축 배향성이 증가하였다. 반면에 펄스 주파수 변화에 따른 아크 발생은 일정한 경향을 나타내지 않았지만 전반적으로 많은 아크가 발생했다. 아크 발생 빈도가 늘어남에 따라 c축 배향성이 감소하였다. 양의 펄스 유지 시간과 펄스 주파수가 감소함에 따라 박막의 증착 속도는 증가하였으며 440$\AA$/min의 높은 증착 속도를 나타냈다.

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IMAGING THE CIRCUMSTELLAR ENVELOPES AROUND EVOLVED STARS WITH THE SMA

  • HIRANO NAOMI;CHIU PO-JIAN;MULLER SEBASTIEN;TRUNG DINH-V
    • 천문학회지
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    • 제38권2호
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    • pp.219-222
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    • 2005
  • We present the high-resolution (2"-4") images of the molecular envelopes surrounding the evolved stars, V Hya, VY CMa, and ${\pi}^1$ Gru observed with the Submillimeter Array. The CO J=2-1 and 3-2 images of the carbon star V Hya show that the circumstellar structure of this star consists of three kinematic components; there is a flattened disk-like envelope that is expanding with a velocity of ${\~}16 km\;s^{-1}$, the second component is the medium-velocity wind having a deprojected velocity of 40-120 km $s^{-l}$ moving along the disk plane, and the third one is the bipolar molecular jet having an extreme velocity of 70-185 km $s^{-l}$. The axis of this high velocity jet is perpendicular to the plane of the disk-like envelope. We found that the circumstellar structure of the S-star ${\pi}^1$ Gru traced by the CO J =2-1 resembles that of V Hya quite closely; the star is surrounded by the expanding disk-like envelope and is driving the medium-velocity wind along the disk plane. We also obtained the excellent images of VY CMa with the CO and $^{13}CO$ J=2-1 and $SO\;6_5-5_4$ lines. The maps of three molecular lines show that the envelope has a significant velocity gradient in the east-west direction, suggesting that the envelope surrounding VY CMa is also flattened and expanding along its radial direction. The high-resolution images obtained with the SMA show that some AGB stars are associated with the asymmetric mass loss including the equatorial wind and bipolar jet.

Fatigue Characteristics of PZT Thin Films Deposited by ECR-PECVD

  • Chung, Su-Ock;Lee, Won-Jong
    • Transactions on Electrical and Electronic Materials
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    • 제6권4호
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    • pp.177-185
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    • 2005
  • Fatigue characteristics of lead zirconate titanate (PZT) films deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition (ECR-PECVD) were investigated. The fatigue characteristics were investigated with respect to PZT film thickness, domain structure, fatigue pulse height, temperature, electrode materials and electrode configurations. The used top and bottom electrode materials were Pt and $RuO_2$. In the fatigue characteristics with fatigue pulse height and PZT film thickness, the fatigue rates are independent of the applied fatigue pulse height at the electric field regions to saturate the P-E hysteresis and polarization $(P^*,\;P^A)$ characteristics. The unipolar and bipolar fatigue characteristics of PZT capacitors with four different electrode configurations $(Pt//Pt,\;Pt//RuO_2,\;RuO_2//Pt,\;and\;RuO_2//RuO_2)$ were also investigated. The polarization-shifts during the unipolar fatigue and the temperature dependence of fatigue rate suggest that the migration of charged defects should not be expected in our CVD-PZT films. It seems that the polarization degradations are attributed to the formation of charged defects only at the Pt/PZT interface during the domain switching. The charged defects pin the domain wall at the vicinity of Pt/PZT interface. When the top and bottom electrode configurations are of asymmetric $(Pt//RuO_2,\;RuO_2//Pt)$, the internal fields can be generated by the difference of charged defect densities between top and bottom interfaces.