• Journal of the Korean Society for Heat Treatment
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• v.13 no.4
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• pp.259-264
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• 2000

In this study, we quantitatively measure the ion ranges of arsenic with energies ranging from 10 KeV to 100 KeV, implanted at $3^{\circ}$, $9^{\circ}$ $15^{\circ}$ the (100) plane, and the damage created during ion implantation. To obtain detailed information of ion range and damage distributions in low energy region where elastic collisions dominate the slowing down process, molecular dynamics computer simulation was performed and compared to the existing results. The effects of implant energy and degree on damage generation are present. The number of vacancy were calculated from the deposited energy using Kinchin-Pease equation. In the energy range 10 keV-100 keV, simulations show that the number of Frenckel pairs produced by As-ion bimbardment is 9 and incident angle dependence of the vacancy was the same but defects were distributed at different depth.

• Proceeding of EDISON Challenge
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• 2016.03a
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• pp.344-346
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• 2016

본 논문에서는 3-stream model에 기반한 Dopant diffusion simulator를 사용하여 실리콘 기판 내부의 As이온의 확산을 시뮬레이션한 결과와 Dual-Pearson Analytic model에 기반하여 Ion implantation을 1-D doping simulation한 결과를 토대로 여러 공정 설계에서 diffusion simulator의 사용가능함을 확인하였다.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.7
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• pp.56-62
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• 1998

Polysilicon resistors with high thermal stability have been fabricated by a new mixed process using POCl$_{3}$ doping and arsenic implantation. Varous temeprature coefficients, which range form 510 ppm/.deg. C to -302 ppm/.deg. C, were shown from the fabricated polysilicon resistors with sheet resistance of 58~107 .ohm./sq in the operating temeprature of 27~150.deg. C. The temperature coefficient of the polysilicon resistor by the mixed technology was about 4.3 times as low compared to the conventional polysilicon resistor using POCl$_{3}$ doped single process with the same sheet resistance of 75.ohm./sq. In addition, the mixed technology can be applied to obtain nearly zero temperature coefficient for polysilicon resistors which are reliable and insensitive to temperature.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.29A no.4
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• pp.28-32
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• 1992

The electrical properties of ONO interpoly dielectrics grown by polycrystalline silicon have been studied. The polysilicon layer deposited as amorphous state kept its surface smoothness even after subsequent heat cycle induced crystallization. Polysilicon was doped with a POCl$_3$ and arsenic ion implantation. Arsenic was implanted in several different doses. The effective barrier heights calculated from F-N plotting method and breakdown fields increased as the polysilicon doping concentration increased. On the other hand they mere degraded when arsenic concentration in polysilicon exceeded 2{\times}10^{20}[cm^{-3}]$. The reliability of dielectric as monitored by TDDB infant fail and breakdown field showed increasing degradation as doping concentration increased

• Journal of the Korean Vacuum Society
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• v.22 no.1
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• pp.31-36
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• 2013

For the simplification of doping process in amorphous carbon film, arsenic (As) ions were implanted on the nucleated silicon wafer before the growth process. Then amorphous carbon films were grown at the condition of $CH_4/H_2=5%$ by microwave plasma chemical vapour deposition. Because the implanted seeds were grown at the high temperature and the implanted ions were spread, it was possible to reduce the process steps by leaving out the annealing process. When the implanted amorphous carbon films were electrically characterized in diode configuration, field emission current of $0.1mA/cm^2$ was obtained at the applied electric field of about $2.5V/{\mu}m$. The results show that the implanted As ions were sufficiently doped by the self-annealing process by using the growth after implantation.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.5
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• pp.476-480
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• 2004

The characteristics of antimony implants are relatively well-known. Antimony has lower diffusion coefficient, shorter implantation range, and smaller scattering as compared with conventional dopants such as phosphorous and arsenic. It has been commonly used in the doping of buried layer in Bi-CMOS process. In this paper, characteristics and appropriate condition of monitoring in antimony implant beam tuning using Sb$_2$O$_3$were investigated to get a reliable process. TW(Thema Wave) and R$_{s}$(Sheet Resistance) test were carried out to set up condition of monitoring for stable operation through the periodic inspection of instruction condition. The monitoring was progressed at the point that the slant of R$_{s}$ varied significantly to Investigate the variation of instruction accurately.

• Electrical & Electronic Materials
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• v.8 no.4
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• pp.426-433
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• 1995

Effect of boron in GaAs have been investigated by photo induced current transient spectroscopy(PICTS). The starting material was undoped liquid encapsulated Czochralski(LEC) semi insulating GaAs and boron ion implantation at 150keV energy was conducted with dose of 10$\^$12/ and 10$\^$13/ions/cm$\^$2/. In ion implanted samples, the peaks related arsenic vacancy(V$\_$As/) were decreased but complex lattice defect was increased with annealing temperature. U band was observed at ion implanted(10$\^$13/ ions/cm$\^$2/) and thermally treated(550.deg. C) sample. More negative peak was detected after annealing at temperature between 600 and 700.deg. C. The measurement of dark current showed that the formation of B$\_$GA/-V$\_$As/, complex defect and complex lattice defect by ion implantation were a reasonable explanation for the decrease in dark current.

• Korean Journal of Materials Research
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• v.26 no.6
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• pp.347-352
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• 2016

ZnO with wurtzite structure has a wide band gap of 3.37 eV. Because ZnO has a direct band gap and a large exciton binding energy, it has higher optical efficiency and thermal stability than the GaN material of blue light emitting devices. To fabricate ZnO devices with optical and thermal advantages, n-type and p-type doping are needed. Many research groups have devoted themselves to fabricating stable p-type ZnO. In this study, $As^+$ ion was implanted using an ion implanter to fabricate p-type ZnO. After the ion implant, rapid thermal annealing (RTA) was conducted to activate the arsenic dopants. First, the structural and optical properties of the ZnO thin films were investigated for as-grown, as-implanted, and annealed ZnO using FE-SEM, XRD, and PL, respectively. Then, the structural, optical, and electrical properties of the ZnO thin films, depending on the As ion dose variation and the RTA temperatures, were analyzed using the same methods. In our experiment, p-type ZnO thin films with a hole concentration of $1.263{\times}10^{18}cm^{-3}$ were obtained when the dose of $5{\times}10^{14}$ As $ions/cm^2$ was implanted and the RTA was conducted at $850^{\circ}C$ for 1 min.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.83-83
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• 1999

본 연구에서는 Auger Elecrtron Spectroscopy (AES) 장비를 이용하여 Silicone Wafer 표면에 BF 이온을 주입시킨 후 Dopping 농도 및 Implantation 에너지에 따른 Si KLL Peak의 변화를 관찰하였다. 또한 PVD Ti 계열 화학물의 시료에 대하여 Peak의 Shape 변화를 관찰하였다. 1)Dopping 농도 및 Implantation 에너지에 따른 Si KLL Peak의 변화 관찰 일반적으로 Silicone 기판에 Arsenic(3가)을 Dopping 하였을 경우, Si KLL Peak의 Kinetic Energy 값은 순수 Si Peak보다 더 작은 값으로 Shift 하며, Boron (5가)을 Dopping하였을 경우에는 더 큰 값으로 Shift 한다. 이론적으로 N-type Si의 에너지 차이는 약 1.0eV로 보고되어 있으며, AES를 이용하여 실험적으로 측정된 값은 약 0.6eV정도로 알려져 있다. 이러한 차이는 Dopping 농도에 따라 Valance Band의 에너지 값이 변화하기 때문이라고 알려져 있다. 본 연구에서는 BF2를 Si에 이온 주입하여 입사 에너지 및 dose 량에 따른 Si KLL Peak의 변화를 관찰하였다. 그림1과 같이 Si KLL Peak는 Implantation Energy가 작을수록 Kinetic Energy가 높은 곳으로 Shift 한다. 이는 LOw Energy로 이온 주입하면, Projected Range (Rp)가 High Energy로 이온 주입할 때보다 작기 때문이며, 이 결과를 Secondary Ion Mass Spectroscopy (SIMS) 및 TRIM simulation을 이용하여 확인하였다. 또한 표면에서의 전자 Density의 변화와 Implantation energy와의 관계를 시료의 표면에서 반사되어 나오는 전자의 에너지 손실(Reflected Electron Energy Loss Spectroscopy:REELS)을 통하여 고찰하였다. 2) PVD Ti 계열화합물의 시료에 대한 peak의 shape 가 변화하며, TiL3M23V (Ti2) 및 TiL3M23M23 (Til) Peak의 Intensity Ratio가 변화한다. 따라서 본 연구에서는 그림 2와 같이 Ti 결합 화합물에서의 Ti Auger Peak의 특성 에너지 값과 Peak Shape를 관찰하여, AES를 이용하여 Ti 계열의 화합물에 대한 Chemical state 분석의 가능성을 평가하였다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.11
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• pp.683-689
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• 2015

For the formation of $N^+$ doping, the antimony ions are mainly used for the fabrication of a BJT (bipolar junction transistor), CMOS (complementary metal oxide semiconductor), FET (field effect transistor) and BiCMOS (bipolar and complementary metal oxide semiconductor) process integration. Antimony is a heavy element and has relatively a low diffusion coefficient in silicon. Therefore, antimony is preferred as a candidate of ultra shallow junction for n type doping instead of arsenic implantation. Three-dimensional (3D) profiles of antimony are also compared one another from different tilt angles and incident energies under same dimensional conditions. The diffusion effect of antimony showed ORD (oxygen retarded diffusion) after thermal oxidation process. The interfacial effect of a $SiO_2/Si$ is influenced antimony diffusion and showed segregation effects during the oxidation process. The surface sputtering effect of antimony must be considered due to its heavy mass in the case of low energy and high dose conditions. The range of antimony implanted in amorphous and crystalline silicon are compared each other and its data and profiles also showed and explained after thermal annealing under inert $N_2$ gas and dry oxidation.