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http://dx.doi.org/10.4313/JKEM.2004.17.5.476

A Study on Sb2O3 Beam Tuning and Monitoring in Antimony Implantation -  

김상용 (동부아남반도체 SEE팀)
최민호 (중앙대학교 전자전기공학)
김남훈 (중앙대학교 전자전기공학)
정헌상 (조선대학교 전기공학)
장의구 (중앙대학교 전자전기공학부)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.17, no.5, 2004 , pp. 476-480 More about this Journal
Abstract
The characteristics of antimony implants are relatively well-known. Antimony has lower diffusion coefficient, shorter implantation range, and smaller scattering as compared with conventional dopants such as phosphorous and arsenic. It has been commonly used in the doping of buried layer in Bi-CMOS process. In this paper, characteristics and appropriate condition of monitoring in antimony implant beam tuning using Sb$_2$O$_3$were investigated to get a reliable process. TW(Thema Wave) and R$_{s}$(Sheet Resistance) test were carried out to set up condition of monitoring for stable operation through the periodic inspection of instruction condition. The monitoring was progressed at the point that the slant of R$_{s}$ varied significantly to Investigate the variation of instruction accurately.
Keywords
Antimony Implant; $Sb_2O_3$; TW(Thema Wave); $R_s$(Sheet Resistance); SIMS;
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