A Study on Sb2O3 Beam Tuning and Monitoring in Antimony Implantation - |
김상용
(동부아남반도체 SEE팀)
최민호 (중앙대학교 전자전기공학) 김남훈 (중앙대학교 전자전기공학) 정헌상 (조선대학교 전기공학) 장의구 (중앙대학교 전자전기공학부) |
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Low resistive ultra shallow junction for sib 0.1㎛ MOSFETs formed by Sb implantation
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Novel species implantation using applied Materials 9500×RTM and ×R LEAPTM implanters
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3 |
SbF₃ as Vaporizer Feed Material for the Bernas Dual Vaporizer in the E220/500 Implanters
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4 |
Annealing characteristics of through-oxide phosphorus ion-implanted Si
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과학기술학회마을 |
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Process performance of SDS, high pressure hydrides and solid vaporizer feed materials on a 9500×R ion implanter
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7 |
Reduction of threshold voltage fluctuation of p-MOSFETs by antimony super steep retrograde well channel
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