Journal of the Korean Society for Heat Treatment (열처리공학회지)
- Volume 13 Issue 4
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- Pages.259-264
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- 2000
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- 1225-1070(pISSN)
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- 2508-4046(eISSN)
Computer Simulaton of Defect Formation Behaviors of Crystal-Silicon on the Low Energy Arsenic Implantation by Molecular Dynamics
분자동력학적 방법에 의한 저 메너지 As 이온 주입에 따른 Si 기판의 결함 형성 거동에 대한 컴퓨터 모사 실험
- Chung, Dong-Seok (Dept. of Materials, Changwon Polytechnic College) ;
- Park, Byung Do (Center for Materials Evaluation and System Development, Changwon Polytechnic College)
- Received : 2000.05.25
- Published : 2000.07.30
Abstract
In this study, we quantitatively measure the ion ranges of arsenic with energies ranging from 10 KeV to 100 KeV, implanted at
Keywords
- Computer Simulaton;
- Defect Formation;
- Crystal-Silicon;
- Low Energy Arsenic Implantation;
- Molecular Dynamics