• 제어로봇시스템학회논문지
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• 제8권5호
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• pp.407-412
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• 2002

A measurement device for gas concentration and flow rate using hot wire is developed for the utilization in industrial applications. The device has two cells of measuring and reference, and a bridge circuit is installed to detect electric current through the hot wire in the cells. An amplification of the signal and conversion to digital output are conducted for the on-line measurement with a personal computer. The flow rate of air and carbon dioxide gas is separately measured for the performance examination of the device. Also, the concentration of air-carbon dioxide and carbon dioxide-argon mixtures is determined for the same evaluation. The outcome of the performance test indicates that the accuracy and stability of the device is satisfactory for the purpose of industrial applications.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1994년도 춘계학술대회 논문집
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• pp.138-140
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• 1994

Plasma polymerized thin film was prepared using an interelectrod inductively coupled gas-flow-type reactor. Styrene was chosen as the monomer to be used. This thin films were also delineated by the electron-beam apparatus with an acceleration voltage 30kV, and the pattern in the resist was developed with RIE 80 with argon gas mixture ratio, pressure and RF power. The effect of charge of discharge power on growth rate and etching rate of the thin films were studied. The molecular structure of thin films were investigated by FIR and then was discussed in relation to its quality as a resist. In the case of Plasma polymerization, thickness of resist could be controlled by discharge duration and power. Also etch rate is increased as to growing argon gas and RF power with RIE 80.

• Applied Science and Convergence Technology
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• 제25권6호
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• pp.145-148
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• 2016

This paper, Al-doped ZnO(AZO) thin films for application as transparent conducting oxide films were deposited on the Corning glass substrate by using RF magnetron sputtering system. The effects of various Argon gas flow rates on optical and electrical characteristics of AZO films were investigate sputtering method. The Carrier Concentration is enhanced as Ar gas rate increases, and also the oxygen vacancy concentration. The figure of merit obtained in this study means that AZO films which deposited Ar gas rate of 75 sccm have the highest Carrier concentration and Hall mobility, which have the highest photoelectrical performance that it could be used as transparent electrodes.

• 반도체디스플레이기술학회지
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• 제17권2호
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• pp.6-11
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• 2018

In this study, we have studied the effect of substrate temperature and hydrogen flow rate on the characteristics of MZO thin films for the TCO(Transparent conducting oxide). MZO thin films were deposited by RF magnetron sputtering at room temperature and $100^{\circ}C$ with various $H_2$ flow rate(1sccm~4sccm). In order to investigate the effect of hydrogen gas flow rate on the MZo thin film, we experimented with changing the hydrogen in argon mixing gas flow rate from 1.0sccm to 4.0sccm. MZO thin films deposited at room temperature and $100^{\circ}C$ show crystalline structure having (002), (103) preferential orientation. The electrical resistivity of the MZO films deposited at $100^{\circ}C$ was lower than that of the MZO film deposited at room temperature. The decrease of electrical resistivity with increasing substrate temperature was interpreted in terms of the increase of the charge carrier mobility and carrier concentration which seems to be due to the oxygen vacancy generated by the reducing atmosphere in the gas. The average transmittance of the MZO films deposited at room temperature and $100^{\circ}C$ with various hydrogen gas flow was more than 80%.

• 한국원자력학회:학술대회논문집
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• 한국원자력학회 1997년도 춘계학술발표회논문집(2)
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• pp.159-164
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• 1997

Pyrolytic carbon layer was coated on A1203 balls by fluidized bed type chemical vapour deposition unit to develop the coating technology for the preparation of coated nuclear fuel. The deposition was carried out at the temperature ranges between 110$0^{\circ}C$ and 130$0^{\circ}C$ with various gas contents and flow rates. Source and carrier gas were propane and argon, respectively. X-ray analysis shows that the deposition layer was typical carbon spectra. The growth rate of carbon layer depended on the amount of source gas and the deposition temperature. For the alumina balls with 2mm in diameter, the deposition rate was 11${\mu}{\textrm}{m}$/hr in the flow gases containing 30% source gas at 130$0^{\circ}C$ with a total flow rate of 2.0$\ell$/min. Microstructural observation of the deposits with scanning electron microscope revealed that the deposits had relatively dense and isotropic structure. Chemical analysis by energy dispersive spectroscopy showed that the layer was pure carbon.

• 한국표면공학회지
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• 제25권5호
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• pp.271-281
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• 1992

Amorphous hydrogenated silicon carbide(a-Si1-xCx : H) films have been prepared by the rf sputtering using a silicon target in a gas mixture of Argon and methane with varying methane gas flow rate(fCH) in the range of 1.5 to 3.5 sccm at constant Argon flow rate of 30sccm and rf power in the range of 3 to 6 W/$\textrm{cm}^2$. The effects of methane flow rate and rf power on the structure and optical properties of a-Si1-xCx : H films have been analysed by measuring both the IR absorption spectrum and the UV transmittance for the films. With increasing the methane flow rate, the optical band gap(Eg) of a-Si1-xCx : H films increases gradually from 1.6eV to the maximum value of 2.42eV at rf power of 4 W/$\textrm{cm}^2$, which is due to an increases in C/Si ratio in the films by an significant increase in the number of C-Hn bonds. As the rf power increases, the number of Si-C and Si-Hn bonds increases rapidly with simultaneous reduction in the number of C-Hn bonds, which is associated with an increase in both degree of methane decomposition and sputtering of silicon. The effects of rf power on the Eg of films are considerably influenced by the methane flow rate. At low methane flow rate, the Eg of films decreased from 2.3eV to 1.8eV with the rf power. On the other hand, at high methane flow rate, that of films increased slowly to 2.4eV.

• Journal of Microbiology and Biotechnology
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• 제32권6호
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• pp.768-775
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• 2022

In this study we aimed to derive the response surface models for Escherichia coli reduction in wheat flour using atmospheric cold plasma (ACP) with three types of gas. The jet-type atmospheric cold plasma wand system was used with a 30 W power supply, and three gases (argon, air, and nitrogen) were applied as the treatment gas. The operating parameters for process optimization considered were wheat flour mass (g), treatment time (min), and gas flow rate (L/min). The wheat flour samples were artificially contaminated with E. coli at a concentration of 9.25 ± 0.74 log CFU/g. ACP treatments with argon, air, and nitrogen resulted in 2.66, 4.21, and 5.55 log CFU/g reduction of E. coli, respectively, in wheat flour under optimized conditions. The optimized conditions to reduce E. coli were 0.5 g of the flour mass, 15 min of treatment time, and 0.20 L/min of nitrogen gas flow rate, and the predicted highest reduction level from modeling was 5.63 log CFU/g.

• 약학회지
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• 제37권1호
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• pp.76-83
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• 1993

The changes in discharge current, emission and/or oscillation frequency of the electric oscillation of a glow discharge are the potential sensitive measure of the concentration of an impurity in the argon plasma supporting gas. A single jet enhanced glow discharge has been interfaced with the gas chromatograph via 1/8" O.D. tube with a heating pad to study the changes in discharge current. To investigate the optimum operating conditions of the glow discharge system as detector for gas chromatography, pressure, gas flow rate, discharge current, distance between the anode and the cathode have been studied.

• Journal of Welding and Joining
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• 제25권4호
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• pp.42-48
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• 2007

An inert gas atomized NiTiZrSiSn bulk metallic glass feedstock was sprayed onto the copper plate using vacuum plasma spraying process. In order to change the in-flight particle energy, that is, thermal energy, the hydrogen gas flow rate in plasma gas mixture was increased at the constant flow rate of argon gas. Coating and single pass spraying bead were produced with the least feeding rate. Regardless of the plasma gas composition, fully melted through unmelted particle could be observed on the overlay coating. However, the frequency of the unmelted particle number density was increased with the decrease of the hydrogen gas flow rate. The amorphous phase fraction within coating was also affected by the number density of the unmelted particle.

• 반도체디스플레이기술학회지
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• 제18권3호
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• pp.7-11
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• 2019

We have investigated the effect of the hydrogen flow rate on the characteristics of IZO thin films for the TCO (transparent conducting oxide). For this purpose, IZO thin films are deposited by RF magnetron sputtering at 300℃ with various H₂ flow rate. To investigate the influences of the ambient gases, the flow rate of hydrogen in argon was varied from 0.1 sccm to 1 sccm. The IZO thin films deposited at 300℃ show crystalline structure having an (222) preferential orientation. The electrical resistivity of the crystalline-IZO films deposited at 300℃ and hydrogen gas of 0.8sccm was 3.192×10^-4Ω cm, the lowest value. As the hydrogen gas flow rate increased, the resistivity tended to decrease. The XPS profiles showed that the number of oxygen vacancy decreased as the hydrogen flow rate increased. The transmittance of the IZO films deposited at 300℃ were showed more than 80%.