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http://dx.doi.org/10.5757/ASCT.2016.25.6.145

A Study on Properties of RF-sputtered Al-doped ZnO Thin Films Prepared with Different Ar Gas Flow Rates  

Han, Seung Ik (Department of Semiconductor Engineering, Cheongju University)
Kim, Hong Bae (Department of Semiconductor Engineering, Cheongju University)
Publication Information
Applied Science and Convergence Technology / v.25, no.6, 2016 , pp. 145-148 More about this Journal
Abstract
This paper, Al-doped ZnO(AZO) thin films for application as transparent conducting oxide films were deposited on the Corning glass substrate by using RF magnetron sputtering system. The effects of various Argon gas flow rates on optical and electrical characteristics of AZO films were investigate sputtering method. The Carrier Concentration is enhanced as Ar gas rate increases, and also the oxygen vacancy concentration. The figure of merit obtained in this study means that AZO films which deposited Ar gas rate of 75 sccm have the highest Carrier concentration and Hall mobility, which have the highest photoelectrical performance that it could be used as transparent electrodes.
Keywords
Al-doped ZnO; Ar gas flow rate; Hall mobility; Oxygen vacancy;
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Times Cited By KSCI : 2  (Citation Analysis)
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