• 대한전기학회:학술대회논문집
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• 대한전기학회 1996년도 하계학술대회 논문집 C
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• pp.1428-1430
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• 1996

Thin Silicon oxynitride(SiON) films have been chemically deposited using 193nm ArF Excimer Laser CVD, with $Si_{2}H_{8}$, $N_{2}O$, and $NH_3$ as the reactive gases and $N_2$ as the carrier gas. Experimental results show that deposition rate and refractive index have a strong dependence on substrate temperature, chamber pressure, gas ratio, laser power and laser beam height. Electrical characterization of oxynitride films demonstrates that for $NH_{3}/N_{2}O$ flow ratios ranging from 0.25 to 1, the leakage currents, the interface trap density and the capacitances (dielect ric constant) increase and the dielectric breakdown fields decrease

• 한국진공학회:학술대회논문집
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• 한국진공학회 1992년도 제2회 학술발표회 논문개요집
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• pp.3-10
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• 1992

pphotostimulated desorpption of NO chemisorbed on ppt(001) at 80K has been studied by the (1+1)-resonance-enhanced multipphoton ionization((1+1)-REMppI) technique. A linearly ppolarized ArF excimer laser ( =193 nm, 6.41eV) is used as the ppumpp laser. A high adsorpption rate selectivity was found in the expposure deppendence of the NO desorpption yield. The NO desorpption yield increases drastically when the amount of NO expposure exceeds ~1.8 L. This result shows that the amount of NO sppecies with a large cross section for pphotostimulated desorpption increases drastically at higher NO coverages. Using scanning tunneling microscoppy, we have observed structural modifications of the chlorinated Si(111)-7$\times$7 surface induced by 266nm laser irradiation. At very low laser fluence of 0.7mJ/$\textrm{cm}^2$, at which thermal desorpption can be ignored, a pperiodic stripped ppattern of a single domain is imaged. This ppattern consists of flat terraces and narrow grooves of ~60 and ~10A in width, resppectively.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1993년도 하계학술대회 논문집 B
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• pp.1271-1273
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• 1993

$SiO_2$ and SiON films are formed by Laser CVD for inter-level dielectrics in submicron VLSI. This technique is noticeable that film formation can be done at low temperatures, below $300^{\circ}C$ with less damage. An ArF Excimer Laser with wave length of 193nm is used to excite and dissociate reactant gases. After film formation growth rate, refractive index, I-V curve, and step coverage characteristics of the films were evaluated.

• 한국광학회지
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• 제12권3호
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• pp.190-199
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• 2001

본 연구에서는 193nm의 ArF excimer laser 광원과 0.65의 NA를 갖는 광학계에서 기본 선폭이 $0.1{\mu}m$이고 duty ratio 가 1:1인 dense line & space(LS) 패턴에 대하여 여러사입사 조명 조건에 따른 초점심도(Depth of Focus; DOF)와 cutoff intensity를 확인하고 기본 capacitor 패턴에서 광학적 근접효과 보정을 위한 hammer head형 보조 패턴의 크기와 여러사입사 조건에 다른 DOF와 cutoff intensity의 변화에 대하여 알아보았다. 그결과 0.1$\mu$m급의 dense 패턴 구현을 위해서는 전형적인 X자형 사구 조명보다는 십자(+)형 사구 조명이나 환형조명이 보다 효과적인 것을 알수 있었다. 이와 더불어 보조 패턴의 크기가 약간 변한다 하더라도 일정한 초점심도와 cutoff intensity를 유지하는 경향을 보이는 특정한 조명 조건이 존재함을 밝히고 그에 따라 최적의 조명 조건과 보조 패턴의 크기에 대하여 알아보았다.

• 한국결정학회지
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• 제1권2호
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• pp.99-104
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• 1990

본 연구에서는 고밀도 광원 활용에 의한 유기금속화합물의 광분해 반응을 이용하여 AmBv 형광 전재료의 Hetero-epitaxy를 고찰하였다. 실제로 ArF Excimer laser(파장 193nm)에 의 하여 III족원으로 trlmethylgallium과 V족원으로 Ammonia의 2분자간 광분해 반응을 이용, (001)면 Sapphire 기판상에 증착시켰다. 생성되는 성막상태는 주사식 전자현미경, X-ray 회절 및 전자선 회절법 (RED)에 의하여 평가하였다. Laser광려기 유무에 따라 결정병합 상태 및 결정형태에 현저한 차이를 관찰할 수 있었으며, 특히 결정격자의 방위성에 큰 영향을 주고 있음이 주목되었다. 광원 조사방법은 수직조사에 의한 기판면 여기보다는 수평조사에 의 한 기상 반응물 여기가 더 효과적 이였다. Laser 광여기에 의한 성막층의 격자형성은 다음 과 같은 2가지 Model중 하나로 설명 할 수 있었다. (001)면 Sapphire//wurzite형 GaN의 (001) 면 또는 (001)면 Sapphire//wurzite형 GaN인의 (001) 면 -t Twinned Zincblende형의 GaN(111)면

• 대한전기학회:학술대회논문집
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• 대한전기학회 1997년도 추계학술대회 논문집 학회본부
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• pp.336-338
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• 1997

The anneal behavior of ArF excimer Laser CVD SiON films has been studied using FT-IR absorption spectroscopy. The anneal temperature range was $400{\sim}800^{\circ}C$ Abundant hydrogen effusion from thes layers was observed as anneal temperature increased. The coexistence of both Si-H am N-H bonds offers the possibility for cross linking am evidence for the occurrence of cross lingking was found in the IR spectrum. The electrical properties were also obtained that tire films have low leakage currents am good TZDB properties.

• Bulletin of the Korean Chemical Society
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• 제15권1호
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• pp.28-33
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• 1994

The laser-assisted chemical vapor deposition (LCVD) is described, by which the growth of single-phase GaN epitaxy is achieved at lower temperatures. Trimethylgallium (TMG) and ammonia are used as source gases to deposit the epitaxial films of GaN under the irradiation of ArF excimer laser (193 nm). The as-grown deposits are obtained on c-face sapphire surface near 700$^{\circ}$C, which is substantially reduced, relative to the temperatures in conventional thermolytic processes. To overcome the lattice mismatch between c-face sapphire and GaN ad-layer, aluminum nitride(AlN) is predeposited as buffer layer prior to the deposition of GaN. The gas phase interaction is monitored by means of quadrupole mass analyzer (QMA). The stoichiometric deposition is ascertained by X-ray photoelectron spectroscopy (XPS). The GaN deposits thus obtained are characterized by X-ray diffractometer (XRD), scanning electron microscopy (SEM) and van der Pauw method.

• 대한기계학회논문집B
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• 제24권12호
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• pp.1580-1587
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• 2000

Rayleigh scattering and laser induced predissociative fluorescence are employed for capturing two-dimensional images of temperature and species concentration in a laminar nonpremixed flame of a diluted hydrogen jet. Rayleigh scattering cross-sections are experimentally obtained ar 248nm. Dispersed LIPF spectra of OH and O$_2$ are also measured in a flame in order to confirm the excitation of single vibronic state of OH and O$_2$ .OH and O$_2$ are excited on the P$_1$(8) line of the A $^2\Sigma ^+(v^`=3) - X^2\pi (V^"=0)$ band and R(17) line of the Schumann-Runge band B $^3\Sigma _u^-(v^`=0) - X ^3\Sigma _g^-(v^"=6)$, respectively. Fluorescence spectra of OH and Hot O$_2$ are captured and two-dimensional images of the hydrogen flame field are successfully visualized.

• 한국분말재료학회지
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• 제15권1호
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• pp.46-52
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• 2008

The restrictor, which is a fluid channel from a reservoir to a chamber inside a thermal micro actuator, has been fabricated using ArF and KrF excimer lasers, Diode-Pumped Solid State Lasers (DPSSL) and femtosecond lasers for a feasibility study. A numerical model of fluid dynamics for the actuator chamber and restrictor is presented. The model includes bubble formation and growth, droplet ejection through nozzle, and dynamics of fluid refill through the restrictor from a reservoir. Since an optimized and well-fabricated restrictor is important for a high frequency actuator, some special beam delivery setups and post processing techniques have been researched and developed. The effects of variations of the restrictor length, diameter, and tapered shapes are simulated and the results are analyzed to determine the optimal design. The numerical results of droplet velocity and volume are compared with the experimental results of a cylindrical-shaped actuator. It is found that the micro actuators having tapered restrictors show better high frequency characteristics than those having a cylindrical shape without any notable decrease of droplet volume. The laser-fabricated restrictors demonstrate initial feasibility for the laser direct ablation technique although more development is required.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1997년도 하계학술대회 논문집 C
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• pp.1280-1282
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• 1997

The oxynitride films were photo-chemically deposited by ArF(wave length: 193nm) excimer laser CVD used to excite and dissociate gas phases $Si_2H_6$, $N_2O$, and $NH_3$ molecules. We obtained various electrical properties when we varied wafer cleaning procedures consisted of a conventional RCA and a two-dip step[4]. The results show the films have low leakage currents and good TZDB properties. We also analyzed the composition of the oxynitride films which have homogeneous composition throughout the film.