Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)

The Korean Institute of Electrical Engineers (대한전기학회)
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A study on the characteristics of the OXYNITRIDE film deposited by Laser CVD

Laser CVD법에 의해 퇴적된 OXYNITRIDE막의 특성에 관한 고찰

  • Kim, C.D. (Dept. of Electrical Engineering, Korea Univ.) ;
  • Shin, S.W. (Dept. of Electrical Engineering, Korea Univ.) ;
  • Jung, M.N. (Dept. of Electrical Engineering, Korea Univ.) ;
  • Kim, J.K. (Dept. of Electrical Engineering, Korea Univ.) ;
  • Sung, Y.S. (Dept. of Electrical Engineering, Korea Univ.)
  • 김강덕 (고려대학교 대학원 전기공학과) ;
  • 신상우 (고려대학교 대학원 전기공학과) ;
  • 정문남 (고려대학교 대학원 전기공학과) ;
  • 김종관 (고려대학교 대학원 전기공학과) ;
  • 성영권 (고려대학교 대학원 전기공학과)
  • Published : 1996.07.22
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Abstract

Thin Silicon oxynitride(SiON) films have been chemically deposited using 193nm ArF Excimer Laser CVD, with $Si_{2}H_{8}$, $N_{2}O$, and $NH_3$ as the reactive gases and $N_2$ as the carrier gas. Experimental results show that deposition rate and refractive index have a strong dependence on substrate temperature, chamber pressure, gas ratio, laser power and laser beam height. Electrical characterization of oxynitride films demonstrates that for $NH_{3}/N_{2}O$ flow ratios ranging from 0.25 to 1, the leakage currents, the interface trap density and the capacitances (dielect ric constant) increase and the dielectric breakdown fields decrease

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