• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 영호남 합동 학술대회 및 춘계학술대회 논문집 센서 박막 기술교육
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• pp.15-19
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• 2006

A pulsed laser ablation deposition (PLAD) technique is an excellent method for the fabrication of amorphous carbon (a-C) films, because it can generate highly energetic carbon clusters on a substrate. This paper was focused on the understanding and analysis of the motion of C particles in laser ablation assisted by Ar plasmas. The simulation has carried out under the pressure P=50 mTorr of Ar plasmas. Two-dimensional hybrid model consisting of fluid and Monte-Carlo models was developed and three kinds of the ablated particles which are carbon atom (C), ion ($C^+$) and electron were considered in the calculation of particle method. The motions of energetic $C^+$ and C deposited upon the substrate were investigated and compared. The interactions between the ablated particles and Ar gas plasmas were discussed.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 춘계학술대회 논문집 센서 박막재료연구회 및 광주 전남지부
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• pp.22-26
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• 2008

In this paper, we developed a hybrid simulation model of carbon laser ablation under the Ar plasmas consisted of fluid and particle methods. Three kinds of carbon particles, which are carbon atom, ion and electron emitted by laser ablation, are considered in the computation. In the present simulation, we adopt capacitively coupled plasma with asymmetrical electrodes. As a result, in Ar plasmas, carbon ion motions were suppressed by a strong electric field and were captured in Ar plasmas. Therefore, a low number density of carbon ions were deposited upon substrate. In addition, the plume motions in Ar gas atmosphere was also discussed.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2007년도 제38회 하계학술대회
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• pp.1408-1409
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• 2007

In this paper, we developed a hybrid simulation model of carbon laser ablation under the Ar plasmas consisted of fluid and particle methods. Three kinds of carbon particles, which are carbon atom, ion and electron emitted by laser ablation, are considered in the computation. In the present modeling, we adopt capacitively coupled plasma with ring electrode inserted in the space between the substrate and the target, graphite. This system may take an advantage of ${\mu}m$-sized droplets from the sheath electric field near the substrate. As a result, in Ar plasmas, carbon ion motions were suppressed by a strong electric field and were captured in Ar plasmas. Therefore, a low number density of carbon ions were deposited upon substrate. In addition, the plume motions in Ar gas atmosphere was also discussed.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 1999년도 추계학술발표회 초록집
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• pp.59-59
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• 1999

In this study, planer inductively coupled $Cl_2$ based plasmas were used to etch InGaN and the effects of plasma conditions on the InGaN etch properties have been characterized using quadrupole mass spectrometry(QMS) and optical emission spectroscopy(OES). As process conditions used to study the effects of plasma characteristics on the InGaN etch properties, $Cl_2$ was used as the main etch gas and $CHF_3,{\;}CH_4$, and Ar were used as additive gases. Operational pressure was varied from SmTorr to 3OmTorr, inductive power and bias voltage were varied from 400W to 800W and -50V to -250V, respectively while the substrate temperature was fixed at 50 centigrade. For the $Cl_2$ plasmas, selective etching of GaN to InGaN was obtained regardless of plasma conditions. The small addition of $CHF_3$ or Ar to $Cl_2$ and the decrease of pressure generally increased InGaN etch rates. The selective etching of InGaN to GaN could be obtained by the reduction of pressure to l5mTorr in $CI_2/IO%CHF_3{\;}or{\;}CI_2/IO%Ar$ plasma. The enhancement of InGaN etch rates was related to the ion bombardment for $CI_2/Ar$ plasmas and the formation of $CH_x$ radicals for $CI_2/CHF_3(CH_4)$ plasmas.

• 한국재료학회지
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• 제2권5호
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• pp.337-342
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• 1992

대향타겟트형 스파터기에서 BaO-l2Fe 복합타겟트를 사용하고 50% $O_2$+Ar 스파터가스를 사용한 반응성 프라즈마를 스펙트로스포프법으로 검진하였다. 프라즈마의 스펙트럼은 Ba, B$a^+$, Fe, FeO, F$e^+$, Ar, $Ar^+$, O, $O^+$의 피크로 이루어져 있었으며 타겟트로 부터 멀어짐에 따라 이온의 상대강도는 중성원소의 그것에 비하여 더 감소하였다.

• 조명전기설비학회논문지
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• 제19권4호
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• pp.24-31
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• 2005

고본 논문에서는 시뮬레이션 기법을 통하여 RAD법을 Ar 플라즈마 상태에서 구동하도록 설정하였다. 이것은 플라즈마를 구성하는 요소들이 PLAD법에 의해 방출된 각 입자들에 어떠한 영향을 미치는가를 확인하고자 하였으며, 특히 방출된 입자들의 운동 에너지 및 밀도를 제어할 수 있을 것으로 기대되어지기 때문이다. Ar 플라즈마의 방전 공간내에서, RAD법에 의한 전자, 탄소 이온$(C^+)$ 및 탄소 원자(C)의 운동 과정을 보다 정확히 계산하기 위해서 입자 및 유체 모델을 융합한 1차원 하이브리드 모델을 계발하였다. 그 결과 쉬스 내에 형성되는 전위를 제어함으로써 기판에 도달하는 $C^+$의 밀도 및 에너지를 제어할 수 있는 것으로 기대되어졌다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.121-121
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• 2011

Graphene formed by chemical vapor deposition was exposed to the various plasmas of Ar, O2, N2, and H2 to examine its effects on the bonding properties of graphene to metal. Upon the Ar plasma exposure of patterned graphene, the subsequently deposited metal electrodes remained intact, enabling successful fabrication of field effect transistor (FET) arrays. The effects of enhancing adhesion between graphene and metals were more evident from O2 plasmas than Ar, N2, and H2 plasmas, suggesting that chemical reaction of O radicals induces hydrophilic property of graphene more effectively than chemical reaction of H and N radicals and physical bombardment of Ar ions. From the electrical measurements (drain current vs. gate voltage) of field effect transistors before and after Ar plasma exposure, it was confirmed that the plasma treatment is very effective in controlling bonding properties of graphene to metals accurately without requiring buffer layers.

• 한국재료학회지
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• 제13권10호
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• pp.635-639
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• 2003

We investigated dry etching of GaAs and AiGaAs in a high density planar inductively coupled plasma system with BCl$_3$and BCl$_3$/Ar gas chemistry. A detailed etch process study of GaAs and ALGaAs was peformed as functions of ICP source power, RIE chuck power and mixing ratio of $BCl_3$ and Ar. Chamber process pressure was fixed at 7.5 mTorr in this study. The ICP source power and RIE chuck power were varied from 0 to 500 W and from 0 to 150 W, respectively. GaAs etch rate increased with the increase of ICP source power and RIE chuck power. It was also found that etch rates of GaAs in $15BCi_3$/5Ar plasmas were relatively high with applied RIE chuck power compared to pure 20 sccm $BCl_3$plasmas. The result was the same as AlGaAs. We expect that high ion-assisted effect in $BCl_3$/Ar plasma increased etch rates of both materials. The GaAs and AlGaAs features etched at 20 sccm $BCl_3$and $15BCl_3$/5Ar with 300 W ICP source power, 100 W RIE chuck power and 7.5 mTorr showed very smooth surfaces(RMS roughness < 2 nm) and excellent sidewall. XPS study on the surfaces of processed GaAs also proved extremely clean surfaces of the materials after dry etching.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 광주전남지부
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• pp.96-100
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• 2006

A pulsed laser ablation deposition (PLAD) technique is an excellent method for the fabrication of amorphous carbon (a-C) films. This paper was focused on the understanding and analysis of the motion of carbon atom (C) and carbon ion ($C^+$) particles in laser ablation assisted by Ar plasmas. The simulation has carried out under the pressure P=10~100 mTorr of Ar plasmas. Two-dimensional hybrid model consisting of fluid and Monte-Carlo models was developed and three kinds of the ablated particles which are C, $C^+$ and electron were considered in the calculation of particle method. The motions of energetic $C^+$ and C deposited upon the substrate were investigated and compared.

• 한국표면공학회지
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• 제32권2호
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• pp.83-92
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• 1999

GaN etching was performed using planar inductively coupled $Cl_2$-based plasmas and the effects of main process parameters on the characteristics of the plasmas and their relations to GaN etch rates were studied. Also, the GaN etch mechanism was investigated using a Langmuir probe and optical emission spectroscopy (OES) during the etching, and X-ray photoelectron spectroscopy (XPS) of the etched surfaces. The GaN etch rates increased with the increase of chlorine radical density and ion energy, and a vertical etch profile haying the etch rate close to 4000 $\AA$/min could be obtained. The addition of 10% Ar to $Cl_2$ gas increased the GaN etch rate and the addition of Ar (more than 20%) and HBr generally reduced the GaN etch rate. The GaN etch rate appeared to be more affected by the chemical reaction between Cl radicals and GaN compared to the physical sputtering itself under the sufficient ion bombardments to break GaN bonds.