• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1994.05a
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• pp.149-151
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• 1994

This thesis describes the effect of heat treatment on the magnetic properties of Co-bsaed Amorphous. A sample was chosen as basic composition with Co$\_$82//Si$\_$2//B$\_$16/ of zero magnetostriction. It was made by single roll method with quartz orifice 0.5[mmø], Ar gas pressure 0.6 [kg/cm$^2$] and roll speed 28 (m/sec) and atmosphere is ,Ar gas. We obtained the sample of width 2.4(mm), thickness 45[$\mu\textrm{m}$]. Made sample annealed for the improvement of magnetic propertics at at annealing temperature 325,350,375 and 400$^{\circ}C$ and annealing time 15, 30, 45, 60 and 120min respectiveily. Amorphous ribbon of co-based showed high permeab- ility ${\mu}$=8000∼14000, and became improvement of magnetic properties according to anneal ins temperature and time. Especially. Amorphous sample at 325$^{\circ}C$ ,45min appearanced high permeability ${\mu}$=13, 589 at frequency f= 100Hz. and loss factor was reduced at low frequency with rising anneal ins ti me and temperature more annealed sample than basic sample.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.499-502
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• 2000

In this study, $\alpha$-Fe$_2$O$_3$thin films were deposited on $Al_2$O$_3$substrate by RF magnetron sputtering method from a $\alpha$-Fe$_2$O$_3$target(99.9%). The sputtering atmosphere was Ar and 80%Ar:20%O$_2$mixture in a total gas pressure of 1~3mTorr. As-deposited $\alpha$-Fe$_2$O$_3$thin films were heated to 300, 400, 500, $600^{\circ}C$ for 5hr in oxygen atmosphere. The structure and the morphology of $\alpha$-Fe$_2$O$_3$thin films were examined by scanning Electron microscopy(SEM) and the crystal structure was analyzed by X-Ray Diffractometer(XRD). The microstructure of the annealed $\alpha$-Fe$_2$O$_3$films exhibits rather gross particle and the grain size was less than 100nm. Since the grain size was very small, the gas sensitivity was expected to be improved.

• Journal of the Korean Vacuum Society
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• v.4 no.S2
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• pp.95-99
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• 1995

keV ion beam irradiatin for surface modification and thin film growth have been discussed. keV ion beam irradiation in reactive gas environment has been developed for improving wettability of polymer, and for enhancing adhesion to metal film, and adventages of the method have been reviewed. An epitaxial Cu film on Si(100) substrate has been grown by ionized cluster beam and changes of crystallinity and surface roughness have been discussed. Stoichiometric $SnO_2$ films on Si(100) and glass have been grown by a hybrid ion beam Deposition(2 metal ion sources+1 gas ion source), and nonstoichiometric $SnO_2$ films are controlled by various deposition conditions in the HIB. Surface modification for polymer by kev ion irradiation have been developed. Wetting angle of water to PC has been changed from 68 degree to 49 degree with $Ar^+$ irradiation and to 8 degree with $Ar^+$ irradiation and the oxygen environment. Change of surface phenomena in a keV ion beam and characteristics of the grown films are suggested.

• Journal of the Korean institute of surface engineering
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• v.52 no.5
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• pp.246-250
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• 2019

Nano-multilayered $Cr_{25.2}Al_{19.5}Si_{4.7}N_{50.5}$ films were deposited on the steel substrate by cathodic arc plasma deposition. They were corroded at $900^{\circ}C$ in $Ar/1%SO_2$ gas in order to study their corrosion behavior in sulfidizing/oxidizing environments. Despite the presence of sulfur in the gaseous environment, the corrosion was governed by oxidation, leading to formation of protective oxides such as $Cr_2O_3$ and ${\alpha}-Al_2O_3$, where Si was dissolved. Iron diffused outward from the substrate to the film surface, and oxidized to $Fe_2O_3$ and $Fe_3O_4$. The films were corrosion-resistant up to 150 h owing to the formation of thin ($Cr_2O_3$ and/or ${\alpha}-Al_2O_3$)-rich oxide layers. However, they failed when corroded at $900^{\circ}C$ for 300 h, resulting in the formation of layered oxide scales due to not only outward diffusion of Cr, Al, Si, Fe and N, but also inward movement of sulfur and oxygen.

• Journal of the Semiconductor & Display Technology
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• v.17 no.4
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• pp.32-36
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• 2018

For various oxygen($O_2$) to argon(Ar) gas ratio, aluminum-doped zinc oxide(AZO) films were deposited for 3 min at different duty ratio by changing reverse pulse times. As the duty ratio increased, the thickness of the AZO film decreased and the sheet resistance increased. It can be concluded that When sputtering AZO Thin film, oxygen interfered with sputtering. When the reverse time was increased, the thickness of AZO was proportional to the real sputtering time and decreased. From the optical transmittance and sheet resistance, it was possible to obtain a higher figure of merits of AZO at a lower reverse pulse time. Even at the short reversed pulse time, it can be concluded that the accumulated charges on the AZO target are completely cleared. At a lower reverse pulse time, pulsed-DC sputtering of AZO is expected to be used instead of DC sputtering in the deposition of transparent conductive oxide(TCO) films without any degradation in thickness and structural/electrical characteristics.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.4
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• pp.289-293
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• 2013

We have studied structural, optical, and electrical properties of the Ga-doped ZnO (GZO) thin films being usable in transparent conducting oxides. The GZO thin films were deposited on the corning 1737 glass plate by the RF magnetron sputtering system. To find optimal properties of GZO for transparent conducting oxides, the Ar gas in sputtering process was varied as 40, 60, 80 and 100 sccm, respectively. As reaction gas decreased, the crystallinity of GZO thin film was increased, the optical bandgap of GZO thin film increased. The transmittance of the film was over 80% in the visible light range regardless of the changes in reaction gas. The measurement of Hall effect characterizes the whole thin film as n-type, and the electrical property was improved with decreasing reaction gas. The structural, optical, and electrical properties of the GZO thin films were affected by Ga dopant content in GZO thin film.

• Journal of Institute of Convergence Technology
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• v.4 no.2
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• pp.47-50
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• 2014

Voloxidation is a process for converting $UO_2$ into $U_3O_8$ while removing some volatile products in spent fuels (SF). Various oxidative gas conditions including air and mixture of Ar and $O_2$ could be adopted for the process. The gas flows into a reactor under high temperature ($>500^{\circ}C$) and components of SF are reacted with the gas. SF is composed of various components such as actinides, lanthanides, and alkali metals. Therefore, it is of significance to understand their behavior during the reactions for process development. However, due to the limit of available experiments, phase diagram analysis should be preceded. TPP diagram is constructed with respect to temperature-pressure-pressure. It shows a stable phase depending on partial pressures of gas components as well as temperature. In this work, we investigated TPP diagrams for actinides, lanthanides and other oxides to determine stable oxide forms under different gas conditions. The results would be used to set up a material balance under a pyroprocessing scheme of SF and compare the gas conditions for the optimization of fission products removal.

• Korean Membrane Journal
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• v.4 no.1
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• pp.25-35
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• 2002

The gas permeation properties have been studied on carbon molecular sieve (CMS) membranes prepared by pyrolysis of P84 polyimide under various conditions. P84 polyimide shows high permselectivities (O$_2$/N$_2$= 9.17 and CO$_2$/N$_2$= 35) for various gas pairs and has a good processibility because it is easily soluble in high polar solvents such as N-methylpyrrolidinone (NMP), dimethylformamide (DMF), and N,N-dimethylacetamide (DMAc). After pyrolysis under Ar flow, the change in the heating rate was found to affect the gas permeation properties to some extent. The permeabilities of the selected gases were shown to be in the order He ＞ CO$_2$＞ O$_2$＞ N$_2$for all the CMS membranes, whose order was in accordance with the order of kinetic gas diameters. It also revealed that the pyrolysis temperature considerably influenced the gas permeation properties of the CMS membranes derived from P84 polyimide. The CMS membranes pyrolized at 700$\^{C}$ temperature exhibited the highest permeability with relatively targe loss in permselectivity. This means that the pyrolysis temperature should be varied in accordance with target gases to be separated.

• Journal of Information Display
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• v.2 no.4
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• pp.29-33
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• 2001

The luminance and discharge characteristics of an AC PDP may be significantly affected by a small amount of impurity gas in working gas. Impurity gases such as $O_2$, O , C and $H_2$ can be mixed in the manufacturing and lor discharge processes. In this paper, a small amount of impurity gas in AC PDP are introduced intertimally and the relationship between the amount of impurity gas and the luminance/discharge characteristics are investigated. The luminous efficiency decreased seriously with the increase in the partial pressure of impurity gases, especially in $H_2$, $O_2$ and $CO_2$, Under the condition of the impurity gas ratio of 2x $10^{-3}$ for Ar, $N_2$, $H_2$, $CO_2$ and $O_2$, the luminous efficiency decreased to about 8%, 8%, 32%, 36% and 50%, respectively.

• Polymer(Korea)
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• v.29 no.6
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• pp.581-587
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• 2005

Commercial polyurethane film (PU) was modified with Ar plasma ionized in dielectric barrier discharge (DBD) plate-type reactor under atmospheric pressure. We measured the change of the contact angle and the surface fee energy with respect to the plasma treatment conditions such as treatment time, RF-power, and Ar gas flow rate. We also optimized the plasma treatment conditions to maximize the surface peroxide concentration. At the plasma treatment time of 70 sec, the power of 120 W and the Ar gas flow rate of 5 liter per minute (LPM), the best wettability and the highest surface fee energy were obtained. The 1,1 diphenyl-2-picrylhydrazyl (DPPH) method confirmed that the surface peroxide concentration was about 2.1 nmol/$\cm^{2}$ at 80 W, 30 sec, 6 LPM.