Journal of the Semiconductor & Display Technology (반도체디스플레이기술학회지)

The Korean Society Of Semiconductor & Display Technology (한국반도체디스플레이기술학회)
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A Study on the Dependency of Pulsed-DC Sputtered Aluminum-doped Zinc Oxide Thin Films on the Reverse Pulse Time

Pulsed-DC 스퍼터링에서 Reverse Pulse Time에 따른 AZO 박막의 특성 변화에 관한 연구

  • Ryu, Hyungseok (Department of Electronics Engineering, Gachon University) ;
  • Zhao, Zhenqian (Department of Electronics Engineering, Gachon University) ;
  • Kwon, Sang Jik (Department of Electronics Engineering, Gachon University) ;
  • Cho, Eou Sik (Department of Electronics Engineering, Gachon University)
  • 류형석 (가천대학교 전자공학과) ;
  • 조진건 (가천대학교 전자공학과) ;
  • 권상직 (가천대학교 전자공학과) ;
  • 조의식 (가천대학교 전자공학과)
  • Received : 2018.11.07
  • Accepted : 2018.12.18
  • Published : 2018.12.31
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Abstract

For various oxygen($O_2$) to argon(Ar) gas ratio, aluminum-doped zinc oxide(AZO) films were deposited for 3 min at different duty ratio by changing reverse pulse times. As the duty ratio increased, the thickness of the AZO film decreased and the sheet resistance increased. It can be concluded that When sputtering AZO Thin film, oxygen interfered with sputtering. When the reverse time was increased, the thickness of AZO was proportional to the real sputtering time and decreased. From the optical transmittance and sheet resistance, it was possible to obtain a higher figure of merits of AZO at a lower reverse pulse time. Even at the short reversed pulse time, it can be concluded that the accumulated charges on the AZO target are completely cleared. At a lower reverse pulse time, pulsed-DC sputtering of AZO is expected to be used instead of DC sputtering in the deposition of transparent conductive oxide(TCO) films without any degradation in thickness and structural/electrical characteristics.

Keywords

References

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