• Korean Journal of Crystallography
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• v.3 no.1
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• pp.44-52
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• 1992

The effect of sintering atmosphere on the final properties and phase change of Ti (C, N) Cr3c2 ceramics was investigated. In the case of sintering in vacuum and N2 atmosphere, densely packed sintered body was obtained. In Ar atmosphere, however, densification was much decreased compared to sintering in vacuum and Na. XRD analysis showed that in vacuum atmosphere Cr3c2 phase was changed to Cr7c3 Phase whereas in N2 and Ar atmosphere phase change was not occurred. That is, for vacuum sintering, the formation of defects in Ti(C, N) structure occurred through de-nitridation process, and it promotes the diffusion of C in Cr3c2 and raises the densification effects. But in the case of N2 atmosphere, densification phenomenon was considered to be due to sintering mechanism that enabled formation of free carbon and removal of oxygen by free carbon and existence of carbon in the grain boundary.

• Journal of the Korean Chemical Society
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• v.15 no.4
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• pp.211-217
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• 1971

The theory of solubility proposed by Jhon and Kihara has been tested and applied to various systems. In the present paper, the systems are the solubilities of gases such as $Ar,\;H_2,\;N_2,\;O_2,\;CO_2,\;CH_4,\;and\;C_2H_6$ in liquid benzene and carbon disulfide, those of solids iodine and naphthalene in the nonaqueous solvents, and those of gases $H_2,\;N_2,\;O_2,\;Ar,\;CH_4,\;and\;C_2H_4$ in the electrolyte solutions. The theoretical values of solubilities are in good agreement with the experimental data in the literature.

• The korean journal of orthodontics
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• v.27 no.5 s.64
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• pp.743-760
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• 1997

This study was done to evaluate the correlations between the size, the form of the cranial base, head posture and the horizontal and vertical position of craniofacial structures. For this purpose, 100 cephalometric radiographs were taken from the sample composed of 51 male and 49 female, 12 measurement criteria and 37 reference points were established and digitized, then calculation was performed for the values of measurement variables and the horizontal and vertical position of reference points. The correlations be4ween them were analyzed statistically and mean facial diagrams were constructed and compared with the selected groups which were composed of 10 Samples each as large and small group from the measurement value. The following results were obtained: 1. The angles n-s-ba and n-s-ar as variables for the ion of cranial base correlated highly to the horizontal and vertical position of reference points in the cervical column with statistical significance($0.1\%$ level). 2. The angles n-s-ba and n-s-ar as variables for the form of cranial base correlated to the horizontal position of the reference points in the facial structure with statistical significance($1\%$ level), but not to the vertical position of them($5\%$ level). 3. The length n-s, s-ba, and n-ar as variables for the size of cranial base were correlated th the position of craniofacial structures in various ways, but in general, highly correlated to the horizontal and vertical position of midfacial structures around the teeth and alveolar area. 4. the angle NSL/CVT and NSL/OPT as postural variables tot the inclination of cranial base and cervical column were correlated to the horizontal position of the craniofacial structures with statistical significance($1\%$ level), but not to the vortical position of them($5\%$ level). 5. The angle OPT/HOR and CVT/HOR as postural variables lot the inclination of cranial base and true horizontal line were not correlated to the horizontal and vertical position of the craniofacial structures with statistical significance($5\%$ level). 6. The correlation between the measurement variables and horizontal and vortical positions of the reference poits in soft tissue were shown as similar to the related hard tissue points.

• Bulletin of the Korean Chemical Society
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• v.25 no.2
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• pp.226-232
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• 2004

Ground and low-lying electronic states of Cr atoms in the gas phase were generated from photolysis of $Cr(CO)_6$ vapor in He or Ar using an unfocussed weak UV laser pulse and their reactions with $O_2$ and $N_2O$ were studied. When 0.5-1.0 Torr of $Cr(CO)_6$ /$O_2$ /He or Ar mixtures were photolyzed using 295-300 nm laser pulses, broadband chemiluminescence peaked at ~420 and ~500 nm, respectively, was observed in addition to the atomic emissions from $z^7P^{\circ}$, $z^5P^{\circ}$, and $y^7P^{\circ}$ states of Cr atoms. When $N_2O$ was used instead of $O_2$, no chemiluminescence was observed. The chemiluminescence intensities as well as the LIF intensities for those three low-lying electronic states ($a^7S_3,\;a^5S_2\;and\;a^5D_J$) showed second-order dependence on the photolysis laser power. Also, the chemiluminescence intensities were first-order in $O_2$ pressure, but the presence of excess Ar showed a strong inhibition effect on them. Based on the experimental results, the chemiluminecent species in this work is attributed to $CrO_2^*$ generated from hot ground state Cr atoms with $O_2$. The apparent radiative lifetimes of the chemiluminescent species and collisional quenching rate constants by $O_2$ and Ar also were investigated.

• Journal of the Korean Ceramic Society
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• v.40 no.8
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• pp.739-745
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• 2003

In $N_{x}$ films were deposited on soda-lime glass without substrate heating by reactive dc magnetron sputtering using indium (In) metal target. Depositions were carried out under various total gas pressures ( $P_{tot}$) of mixture gases (Ar+$N_2$ or He+$N_2$). He gas was introduced to $N_2$ gas in order to enhance the reactivity of nitrogen on film surface by the "penning ionization". Plasma impedance decreased greatly when 20% or more introduced the $N_2$ gas. This is due to the In $N_{x}$ layers formed on target surface because a secondary electron emission rate of InN is small compared with In metal. XRD patterns of the films revealed that <001> preferred oriented polycrystalline In $N_{x}$ films, where the crystallinity of the films was improved with decrease of $P_{tot}$ and with increase of $N_2$ flow ratio. The improvement of the crystallinity and stoichimetry of the In $N_{x}$ films were considered to be caused by an increase in the activated nitrogen radicals and also by an increase in the kinetic energy of sputtered In atoms arriving at growing film surface, which should enhance the chemical reaction and surface migration on the growing film surface, respectively. Furthermore, the films deposited using mixture gases of He+$N_2$ showed higher crystallinity compared with the film deposited by the mixture gases of Ar+$N_2$.$.EX>.

• Journal of the Korean Magnetics Society
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• v.5 no.1
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• pp.42-47
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• 1995

FeN thin films for inductive recording heads were sputter deposited using RF diode sputtering mehtod from a pure iron target onto 7059 glass substrates, and their magnetic properties were measured. The magnetic properties were greatly affected by film thickness, gas pressure, sputter power and flow ratio of $N_{2}$ to Ar. Single layer FeN films with their thickness varied from $1,000\;{\AA}$ to $6,000\;{\AA}$ were doposited. 800 W sputter power, 3 mT gas pressure, $N_{2}$ to Ar flow ratio of 6.6 : 100 were the sputtering conditions. Up to 7 layers of FeN films having total thickness of $6,000\;{\AA}$ were deposited using $SiO_{2}$ of $30\;{\AA}$ thickness as intermediate layers and their coercivity and saturation magnetization were measured. The sputtering conditions were the same as those in the single layer films. Easy axis coercivity of the single layer FeN films gradually decreased as their thickness was increased, but for the films with their thicknesses above $3,000\;{\AA}$, the coercivity changed very little. As the number of the FeN layers were increased, the coercivity decreased We estimated the grain size of FeN films from the FWHM (Full Width at Half Maximum) of X-ray diffraction peaks. The grain size steadily decreased from about $200\;{\AA}$ to $120\;{\AA}$ as the number of layers were increased. Minimum hard axis coercivity of 0.4 Oe was obtained when the number of layers was four. Maximum relative permeability was 2,900 when the number of layers was three. The cut off frequeocy of the multilayer films were above 100 MHz.

• Journal of the Korean Institute of Telematics and Electronics
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• v.22 no.4
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• pp.76-83
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• 1985

Mo2N/Mo double layer which is to be used for gate of the RMOS (refractory metal oxide semiconductor) and interconnection material has been formed by means of low temperature r.f. reactive sputtering in Ar and N2 mixture. The sheet .esistance of 1 000$\AA$Mo2 N/4000$\AA$Mofilm was about 1.20-1.28 ohms/square, which is about an order of magnitude lower than that of polysilicon film. The workfunction difference naE between MO2N/MO layer and (100) p-Si with 6-9 ohm'cm resistivity obtained from C-V plots was about -0.30ev, and the fixed charge density Qss/q in the oxide was about 2. Ix1011/cm2. To evaluate the signal transfer delay time per inverter stage, an integrated ring oscillator circuit consisting of 45-stage inverters was fabricated using the polysilicon gate NMOS process. The signal transfer delay time per inverter stage obtained in this experiment was about 0.8 nsec

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1989-1991
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• 1999

This paper presents characteristics of CrN thin-film strain gauges, which were deposited on glass by DC reactive magnetron sputtering in an argon-nitrogen atmosphere(Ar-$(5{\sim}25%)N_2$). The physical and electrical characteristics of these films investigated with the thickness range $3500{\AA}$ of CrN thin films, annealing temperature $(100{\sim}300^{\circ}C)$ and annealing $(24{\sim}72hr)$. The optimized condition of CrN thin-film strain gauges were thickness range of $3500{\AA}$ and annealing condition($300^{\circ}C$, 48 hr) in Ar-10 %$N_2$ deposition atmosphere. Under optimum conditions, the CrN thin-films for strain gauge is obtained a high resistivity, ${\rho}=1147.65{\mu}{\Omega}cm$, a low temperature coefficient of resistance, TCR=$-186ppm/^{\circ}C$ and a high temporal stability with a good longitudinal, 11.17. And change in resistance after annealing for the CrN thin-films were quitely linear and stable.

• The Korean Journal of Ceramics
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• v.5 no.4
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• pp.324-330
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• 1999

$Si_3N_4$-$TiB_2$ with 2 wt% $Al_2O_3$ and 4 wt% $Y_2O_3$ additives was hot pressed in a flowing $N_2$ environment with varying $TiB_2$ content from 10 to 50 vol%. Variations of mechanical (hardness, fracture toughness, and flexual strength), and tribological properties as a function of $TiB_2$ content were investigated. As the content of $TiB_2$ increased, relative density decreased due to the chemical reaction of $TiB_2$in $N_2$ environment. The reduction of density causes mechanical properties to be degraded with an increase of $TiB_2$ in $Si_3N_4$. Tribological properties were dependent of microstructure as well as mechanical properties, however, they were degraded strongly by the chemical reaction of $Si_3N_4$-$TiB_2$ during hot pressing in $N_2$ environment. SEM and TEM observations, and X-ray diffraction analysis that the chemical reaction products at the interface are TiCN, Si, and $SiO_2$. Also, the comparison of XRD patterns of the $Si_3N_4$-40 vol% $TiB_2$ composites hot pressed at $1,750^{\circ}C$ for 1 hour between in $N_2$ and in Ar gas was made. The XRD peaks of Si and $SiO_2$ were not found in Ar, but still a weak peak of TiCN was presented.

• Journal of the Korean Vacuum Society
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• v.17 no.5
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• pp.426-434
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• 2008

A space averaged $SiH_4/O_2/Ar$ simulator for the high density inductively coupled plasma sources for $SiH_4/O_2/Ar$ discharge is developed. The developed simulator uses space averaged fluid equations for electrons, positive ions, negative ions, neutral species, and radicals in $SiH_4/O_2/Ar$ plasma discharge, and the electron heating model including the anomalous skin effect. Using the developed simulator, the dependency of the density of charged particles, neutral particles, and radicals, the electron temperature, the plasma resistance, and the power absorption coefficient for the RF power and pressure is calculated.