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http://dx.doi.org/10.5757/JKVS.2008.17.5.426

Development of High Density Inductively Coupled Plasma Sources for SiH4/O2/Ar Discharge  

Bae, S.H. (School of Electrical and Electronic Engineering, Chungbuk National University)
Kwon, D.C. (School of Electrical and Electronic Engineering, Chungbuk National University)
Yoon, N.S. (School of Electrical and Electronic Engineering, Chungbuk National University)
Publication Information
Journal of the Korean Vacuum Society / v.17, no.5, 2008 , pp. 426-434 More about this Journal
Abstract
A space averaged $SiH_4/O_2/Ar$ simulator for the high density inductively coupled plasma sources for $SiH_4/O_2/Ar$ discharge is developed. The developed simulator uses space averaged fluid equations for electrons, positive ions, negative ions, neutral species, and radicals in $SiH_4/O_2/Ar$ plasma discharge, and the electron heating model including the anomalous skin effect. Using the developed simulator, the dependency of the density of charged particles, neutral particles, and radicals, the electron temperature, the plasma resistance, and the power absorption coefficient for the RF power and pressure is calculated.
Keywords
High density inductively coupled plasma sources; Space averaged; Anomalous skin effect;
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