• Journal of the Korean Vacuum Society
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• v.19 no.3
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• pp.190-198
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• 2010

Asymmetric model for plasma uniformity by Ar and $CF_4$ was modeled by the antenna structure, the diameter of chamber, and the distance between source and substrate for the development of plasma equipment for 450 mm wafer. The aspect ratio of chamber was divided by diameter, distance from substrate, and pumping port area. And we found the condition with the optimized plasma uniformity by changing the antenna structure. The drift diffusion and quasi-neutrality for simplification were used, and the ion energy function was activated for the surface recombination and etching reaction. The uniformity of plasma density on substrate surface was improved by being far of the distance between substrate wall and chamber wall, and substrate and plasma source. And when the antenna of only 2 turns was used, the plasma uniformity can improve from 20~30% to 4.7%.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2015.11a
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• pp.280-280
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• 2015

플라즈마 진단법 중 내부에 삽입하여 측정하는 단일 랭뮤어 탐침법은 플라즈마 특성을 정확하게 측정할 수 있다. 탐침에 (-)극을 걸어서 들어오는 전류를 통해서 이온포화 전류밀도를 측정할 수 있다. 본 연구에서는 유도결합플라즈마에 흐르는 가스와 압력에 따라서 변화를 확인하였다. $H_2$, Ar, $CF_4$ gas로 10 mTorr, 70 mTorr, $CF_4$ 주입위치의 조건으로 플라즈마 밀도를 구하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.275-278
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• 2001

Ferroelectric PZT thin films were fabricated on the RuO$_2$/Pt, Pt bottom electrode with a PZT(53/47) metal alkoxide solutions. All PZT thin films showed a uniform grain structure without the presence of rosette structure. The PZT thin films were etched as a function of Cl$_2$/Ar and additive CF$_4$ into Cl$_2$(80%)/Ar(20%). The etch rates of PZT thin films were 1970 ${\AA}$/min at 30 % additive CF$_4$ into Cl$_2$(80%)/Ar(20%). The remanent polarization and leakage current density in PZT thin film on the RuO$_2$/Pt were 64.2 ${\mu}$C/cm$^2$, 1.4${\times}$10$\^$-6/ respectively.

• Proceedings of the Korean Radioactive Waste Society Conference
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• 2005.11b
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• pp.300-315
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• 2005

Recently plasma surface-cleaning or surface-etching techniques have been focused in the respect of decontamination of spent or used nuclear parts and equipment. In this study decontamination rate of metallic cobalt surface was experimentally investigated via its surface etching rate with a $CF_4-O_2$ mixed gas plasma and metallic surface wastes of cobalt oxides were simulated and decontaminated with $NF_3$ - Ar mixed gas plasma. Experimental results revealed that a mixed etchant gas with about $80{\%}\;CF_4-20{\%}\;O_2$ gives the highest reaction rate of cobalt disk and the rate reaches with a negative 300 DC bias voltage up to $0.43\;{\mu}m$/min at $380^{\circ}C$ and $20{\%}\;NF_3-80\%$ Ar mixed gas gives $0.2\;{\mu}m$/min of reaction rate of cobalt oxide film.

• Proceedings of the Korean Vacuum Society Conference
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• 2002.02a
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• pp.169-169
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• 2002

• Transactions on Electrical and Electronic Materials
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• v.5 no.6
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• pp.223-226
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• 2004

The PZT thin films are one of well-known materials that has been widely studied for ferroelectric random access memory (FRAM). We etched the PZT thin films by $CF_{4}/(Cl_{2}+Ar)$ plasma and investigated improvement in etching damage by $O_{2}$ annealing. The maximum etch rate of the PZT thin films was 157 nrn/min and that the selectivity of the PZT thin films to Pt was 3.1 when $CF_{4}(30{\%})$ was added to a $Cl_{2}(80{\%})/Ar(20{\%})$ gas mixing ratio. To improve the ferroelectric properties of PZT thin films after etching, the samples were annealed for 10 min at various temperatures in $O_{2}$ atmosphere. After $O_{2}$ annealing, the remanent polarization of the asdeposited films was $34.6{\mu}/cm^{2}$ and the sample annealed at 650, 550, and $450^{\circ}C$ was 32.8, 22.3, and $18.6{\mu}/cm^{2}$, respectively. PZT thin films with $O_{2}$ annealing at $450^{\circ}C$ retained $77{\%}$ of their original polarization at 106 cycles. Also as the annealing temperature increased, the fatigue properties improved. And the leakage current was decreased gradually and almost recovered to the as-deposited value after the annealing at $450^{\circ}C$.

• Journal of the Semiconductor & Display Technology
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• v.21 no.3
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• pp.57-62
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• 2022

The plasma resistance of multi-component glasses containing La, Gd, Ti, Zn, Y, Zr, Nb, and Ta was analyzed in this study. The plasma etching was performed via inductively coupled plasma-reactive ion etching (ICP-RIE) using CF₄/O₂/Ar mixed gas. After the reaction, the glass with a low fluoride sublimation temperature and high content of P, Si, and Ti elements showed a high etching rate. On the other hand, the glass containing a high fluoride sublimation temperature component such as Ca, La, Gd, Y, and Zr exhibited high plasma resistance because the etch rate was lower than that of sapphire. Glass with low plasma resistance increased surface roughness after etching or nanoholes were formed on the surface, but glass with high plasma resistance showed little change in surface microstructure. Thus, the results of this study demonstrate the potential for the development of plasma-resistant glasses (PRGs) with other compositions besides alumino-silicate glasses, which are conventionally referred to as plasma-resistant glasses.

• Electrical & Electronic Materials
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• v.7 no.4
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• pp.294-299
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• 1994

CHF$_{3}$/CH$_{4}$Ar 플라즈마에 의해 형성된 산화막 식각 잔류물의 화학구조와 이 잔류물의 제거를 위한 세정방법을 x-ray photoelectron spectroscopy를 이용하여 조사하였다. 잔류무르이 구조는 CF$_{x}$-polymer와 Si-C, Si-O 결합으로 이루어진 SiO$_{y}$ C$_{z}$ 이었다. CF$_{4}$O$_{2}$ 플라즈마에 의한 silicon light etch는 산화막 식각 잔류물인 SiO$_{y}$ C$_{z}$ 층과 손상된 실리콘 표면을 제거하엿으며 NH$_{4}$OH-H$_{2}$O$_{2}$과 HF용액으로 완전히 제거되는 CF$_{x}$-polymer/SiO$_{x}$층을 남겼다. 100.angs.정도의 silicon light etch는 minority carrier life time과 thermal wave signal값을 초기 웨이퍼 수준까지 회복시켰으며 접합누설 전류도 거의 습식 식각 공정수준까지 감소시켰다.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.30 no.2
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• pp.66-72
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• 2020

The difference of plasma resistance between the CAS glass bulk and coating films were compared. Plasma resistance was confirmed by analyzing the etch rate and the microstructure of the surface when the CAS glass bulk and the glass coating film were etched with CF₄/O₂/Ar plasma gas. CAS glass coating film was etched up to 25 times faster than the glass bulk. A statistically high correlation between the surface roughness and the etching rate of the coating film was derived, and thus, the high surface roughness of the coating film was determined to cause rapid etching. In addition, cristobalite crystals that has a low Ca content and a high Si content, was foamed on the glass coating film. Therefore, the CAS glass coating film is considered to have low plasma resistance compared to the glass bulk.

• Journal of the Korean Vacuum Society
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• v.20 no.6
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• pp.422-429
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• 2011

Dependence of radical and ion density on electron density and temperature is numerically investigated for $Cl_2$/Ar, $CF_4$, $CF_4/O_2$, $CF_4/H_2$, $C_2F_6$, $C_4F_8$ and $SF_6$ discharges which are widely used for etching process. We derived a governing equation set for radical and ion densities as functions of the electron density and temperature, which are easier to measure relatively, from continuity equations by assuming steady state condition. Used rate coefficients of reactions in numerical calculations are directly produced from collisional cross sections or collected from various papers. If the rate coefficients have different values for a same reaction, calculation results were compared with experimental results. Then, we selected rate coefficients which show better agreement with the experimental results.