Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Electrical Characterization of PZT and Electrodes after Dry Etching in Inductively Coupled plasma

유도결합 플라즈마를 이용한 PZT/전극의 식각 후 전기적 특성

  • 김경태 (중앙대학교 전기전자공학부) ;
  • 강명구 (중앙대학교 전기전자공학부) ;
  • 박영 (성균관대학교 전자전기컴퓨터공학부) ;
  • 송준태 (성균관대학교 전자전기컴퓨터공학부) ;
  • 이철인 (안산공과대학 전기과) ;
  • 장의구 (중앙대학교 전기전자공학부) ;
  • 김창일 (중앙대학교 전기전자공학부)
  • Published : 2001.07.01
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Abstract

Ferroelectric PZT thin films were fabricated on the RuO$_2$/Pt, Pt bottom electrode with a PZT(53/47) metal alkoxide solutions. All PZT thin films showed a uniform grain structure without the presence of rosette structure. The PZT thin films were etched as a function of Cl$_2$/Ar and additive CF$_4$ into Cl$_2$(80%)/Ar(20%). The etch rates of PZT thin films were 1970 ${\AA}$/min at 30 % additive CF$_4$ into Cl$_2$(80%)/Ar(20%). The remanent polarization and leakage current density in PZT thin film on the RuO$_2$/Pt were 64.2 ${\mu}$C/cm$^2$, 1.4${\times}$10$\^$-6/ respectively.

Keywords