• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.45-45
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• 2009

This paper describes the formation of porous 3C-SiC by anodization. 3C-SiC thin films were deposited on p-type Si(100) substrates by APCVD using HMDS (Hexamethyildisilane: $Si_2(CH_3)_6$). UV-LED(380 nm) was used as a light source. The surface morphology was observed by SEM and the pore size was increased with increase of current density. Pore diameter of 70 ~ 90 nm was achieved at 7.1 $mA/cm^2$ current density and 90 sec anodization time. FT-IR was conducted for chemical bonding of thin film and porous 3C-SiC. The Si-H bonding was observed in porous 3C-SiC around wavenumber 2100 $cm^{-1}$. PL shows the band gap enegry of thin film (2.5 eV) and porous 3C-SiC (2.7 eV).

• Bulletin of the Korean Chemical Society
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• v.33 no.8
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• pp.2675-2678
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• 2012

Studies on niobium anodization in the mixture of 1 M $H_3PO_4$ and 1 wt % HF at galvanostatic anodization are described here in detail. Interestingly, duplex niobium oxide consisting of thick barrier oxide and correspondingly thick porous oxide was prepared at a constant current density of higher than 0.3 $mAcm^{-2}$, whereas simple porous type oxide was formed at a current density of lower than 0.3 $mAcm^{-2}$. In addition, simple barrier or porous type oxide was obtained by galvanostatic anodization at a single electrolyte of either 1 M $H_3PO_4$ or 1 wt % HF, respectively. The formation mechanism of duplex type structures was ascribed to different forming voltages required for moving anions.

• Journal of the Korean Institute of Telematics and Electronics
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• v.18 no.1
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• pp.7-19
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• 1981

Anodization method is utilized in order to measure diffusion profiles of boron and arsenic in silicon. The solution used for silicon anodization is Ethylene glycol +KNO3(0.04N), The thickness of silicon which is consumed by a single 200V anodization is 460$\pm$40A regardless of wafer type. The profiles of boron and arsenic in silicon after predeposition process are investigated. The diffusion coefficients of both dopants depending on impurity concentration are extrated from these profiles. The base pull-in effect has been observed in prototype npn transistors with arsenic doped emitter.

• Journal of the Korean Ceramic Society
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• v.48 no.6
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• pp.625-629
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• 2011

In this study, we show that by anodization of Nb in NaF electrolytes microcone niobium oxide layers can be formed under a range of experimental conditions. It is found that a single NaF electrolyte leads to the formation of microcones. At 1 M NaF, 40 V, 1 h, well-ordered microcones were generated on Nb discs. XRD results show that the initially formed anodic oxide is amorphous, but an amorphous to crystalline transition occurs during anodization. For the formation of favorable microcones, it is considered that proper parameters such as electrolyte concentration, voltage, anodizing time are necessary according to the kind of electrolytes.

• Journal of the Korean institute of surface engineering
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• v.51 no.1
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• pp.27-33
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• 2018

In the present work, we demonstrate the feasibility to form large inner diameter $TiO_2$ nanotubes by anodization of Ti in a HF/ethylene glycol electrolyte. In order to achieve the large inner diameter $TiO_2$ nanotubes, optimization of the anodization condition is required. We discover the key factors in the formation of large inner diameter $TiO_2$ nanotubes are concentration of water in the electrolyte, anodization temperatures, and high-applied potential. Under optimum conditions, the inner diameters of $TiO_2$ nanotubes are 379 nm. The results are approximately 3 folders larger than the general case.

• Journal of the Korean institute of surface engineering
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• v.49 no.6
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• pp.486-489
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• 2016

In the present work, we investigate the anodization of Nb in a $K_2HPO_4$ containing glycerol electrolyte at elevated temperatures ($180^{\circ}C$). Under optimized conditions, uniformly over the entire anodized surface, self-organized porous $Nb_2O_5$ structures can be formed. The growth rate of highly ordered $Nb_2O_5$ is $1.7{\mu}m/min$ at beginning stage of anodization and the overall current efficiency is 70 %.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.33-33
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• 2010

Recently, a self-organizing process that occurs during the anodization of aluminum in acidic electrolytes has attracted a vast amount of research attentions, coupled with the ever-increasing demand for the development of effective, inexpensive and technologically simple methods for the synthesis of low-dimensional nanostructures over a macroscopic area overcoming many of the drawbacks of conventional lithographic techniques. In this presentation, recent progress in the fabrication of ordered nanoporous anodic aluminum oxide (AAO), including conventional anodization techniques, newly developed pulse anodization, hard anodization processes, and generic approaches to three-dimensional pore structures with periodically modulated diameters. Discussion will also cover the applications of AAO for the development of structurally well-defined extended arrays of low-dimensional nanostructures, such as nanodots, nanotubes, and nanowires, which could be model systems in investigating a diverse range of research problems in chemistry and physics and also be starting materials in realizing advanced electronic devices.

• Journal of Electrochemical Science and Technology
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• v.12 no.2
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• pp.212-216
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• 2021

We investigated the feasibility of hydrogen storage with electrochemically formed VO₂ nanotubes. The VO₂ nanotubes were fabricated through the anodization of vanadium metal in fluoride ion-containing organic electrolyte followed by an annealing process in an Ar-saturated atmosphere at 673 K for 3 h at a heating rate of 3 K /min. During anodization, the current density significantly increased up to 7.93 mA/cm² for approximately 500 s owing to heat generation, which led to a fast-electrochemical etching reaction of the outermost part of the nanotubes. By controlling the anodization temperature, highly ordered VO₂ nanotubes were grown on the metal substrate without using any binders or adhesives. Furthermore, we demonstrated the hydrogen sorption properties of the anodic VO₂ nanotubes.

• Proceedings of the Materials Research Society of Korea Conference
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• 2002.11a
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• pp.82-82
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• 2002

• Journal of the Korea Academia-Industrial cooperation Society
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• v.13 no.10
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• pp.4757-4761
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• 2012

LED chip on board(COB) package has been fabricated using aluminum substrate and aluminum anodization process. An alumina layer, used as a dielectric in COB substrate, is produced on aluminum substrate by selective anodization process. Also, selective anodization process makes it possible to construct a thermal via with a fully-filled via hole. Two types of the COB package are fabricated in order to analyze the effects of their substrate types on thermal resistivity and luminous efficiency. The aluminum substrate with the thermal via shows more improved measurement results compared with the alumina substrate. These results demonstrate that selective anodization process and thermal via can increase heat dissipation of COB package in this work. In addition, it is proved experimentally that these parameters also can be enhanced using efficient layout of multiple chip in the COB package.