• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.4
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• pp.301-307
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• 2002

Direct bonded SOI wafer pairs with $Si ll SiO_2/Si_3N_4 ll Si$ the heterogeneous insulating layers of SiO$_2$-Si$_3$N$_4$are able to apply to the micropumps and MEMS applications. Direct bonding should be executed at low temperature to avoid the warpage of the wafer pairs and inter-diffusion of materials at the interface. 10 cm diameter 2000 ${\AA}-SiO_2/Si(100}$ and 560 $\AA$- ${\AA}-Si_3N_4/Si(100}$ wafers were prepared, and wet cleaned to activate the surface as hydrophilic and hydrophobic states, respectively. Cleaned wafers were pre- mated with facing the mirror planes by a specially designed aligner in class-100 clean room immediately. We employed a heat treatment equipment so called fast linear annealing(FLA) with a halogen lamp to enhance the bonding of pre mated wafers We kept the scan velocity of 0.08 mm/sec, which implied bonding process time of 125 sec/wafer pairs, by varying the heat input at the range of 320~550 W. We measured the bonding area by using the infrared camera and the bonding strength by the razor blade clack opening method, respective1y. It was confirmed that the bonding area was between 80% and to 95% as FLA heat input increased. The bonding strength became the equal of $1000^{\circ}C$ heat treated $Si ll SiO_2/Si_3N_4 ll Si$ pair by an electric furnace. Bonding strength increased to 2500 mJ/$\textrm{m}^2$as heat input increased, which is identical value of annealing at $1000^{\circ}C$-2 hr with an electric furnace. Our results implies that we obtained the enough bonding strength using the FLA, in less process time of 125 seconds and at lowed annealing temperature of $400^{\circ}C$, comparing with the conventional electric furnace annealing.

• Korean Journal of Optics and Photonics
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• v.20 no.1
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• pp.34-40
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• 2009

In-situ pulse laser (Nd-YAG, 2nd harmonics 532 nm) annealing used in physical vapor deposition of $MgF_2$, $SiO_2$ and ZnS thin films was shown to be effective in improving their surface roughness properties. Total integrated scattering (TIS) measurements of $MgF_2$ and $SiO_2$ samples deposited on glass substrates revealed that the laser irradiation of films at an energy of approximately $140\;mJ/cm^2$ at 532 nm with a repetition frequency of 10 Hz and pulse duration of 5 ns during the deposition resulted in total scatterings that were minimum. But in case of the ZnS samples, measurements revealed minimum total scattering at a laser energy of approximately $62\;mJ/cm^2$. Atomic Force Microscopy (AFM) has been used to evaluate the effect of pulse laser annealing on the surface roughness for thin film samples. The results were similar to the TIS measurements, indicating that surface roughness was decreased when the irradiated annealing pulse laser energy increased. But it also increased when the irradiated annealing pulse laser energy was over some limit that depended on the materials.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.13 no.5
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• pp.241-246
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• 2003

The transparent conducting thin film of ATO (antimony-doped tin oxide) was successfully fabricated on$SiO_2$/glass substrate by a sol-gel dip coating method. The crystalline phase of the ATO thin film was identified as SnO$_2$ major phase and the film thickness was about 100 nm/layer at the withdrawal speed of 50 mm/minute. Optical transmittance and electrical resistivity of the 400 nm-thick ATO thin film which was annealed under nitrogen atmosphere were 84% and $5.0\times 10^{-3}\Omega \textrm{cm}$, respectively. It was found that the $SiO_2$ layer inhibited Na ion diffusion and the formation of impurities like $Na_2SnO_3$ or SnO while increasing Sb ion concentration and higher ratio of $Sb^{5+}/Sb^{3+}$in the film. Annealing at nitrogen atmosphere leads to the reduction of $Sn^{4+}$ as well as $Sb^{5+}$ resulting in decrease of the electrical resistivity of the film.

• Journal of the Semiconductor & Display Technology
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• v.21 no.2
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• pp.85-89
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• 2022

We reported on annealing effect on Ga₂O₃/Al₂O₃/SiC devices grown by radio frequency sputtering method. Post-deposition annealing at 900 ℃ was performed, which results in crystallization in the Ga₂O₃ films. The major peaks (-401) and (403) of Ga₂O₃ which was thermally treated at 900 ℃ appears in the x-ray diffraction (XRD) results. Auger electron spectroscopy (AES) shows that Ga and Al atoms seems to be diffused into the opposite direction Al₂O₃ and Ga₂O₃ after annealing. Transfer and output characteristics of back-gate transistor were analyzed where SiC substrate is used as gate material. On-state current and on/off ratio increased almost 10⁹ and 10⁶ times higher in the 900 ℃ annealed sample.

• Korean Journal of Materials Research
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• v.3 no.1
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• pp.19-27
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• 1993

Abstract The PZT thin film was deposited by usin. RF magnetron sputtering with PZT(52/48) target. The formation of perovskite structure PZT thin film started at 55$0^{\circ}C$ on Si substrate. The AES results showed an oxide layer formed at the between Si and PZT film during the annealing. And, Ti$O_2$ layer appeared at the between TiN and PZT film for the annealing. But, the perovskite phase PZT film was formed after the annealing on the Si$O_2$/Si substarte. The ratio in PZT film was constant across the asdeposited PZT film, but, Pb have diffused into the Si substrate and Si have out-diffused into PZT layer during the post annealing at 75$0^{\circ}C$. The dielectric constants of PZT film indicated about 1300( thickness: 1500$\AA$, at 10KHz) but, the cracks were appeared to surface for annealing.

• Journal of IKEEE
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• v.22 no.4
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• pp.1230-1233
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• 2018

$Al_2O_3$ films with the thickness of 50 nm were fabricated on 4H-SiC by aerosol deposition, and their electrical properties were characterized with different post annealing conditions. As a result, the $Al_2O_3$ film annealed in $N_2$ atmosphere showed decreased fixed charge density at the interface area between the $Al_2O_3$ and SiC, and increased leakage currents due to the generation of oxygen vacancies. From this result, it was confirmed that proper $N_2$ and $O_2$ ratio for the post annealing process is important.

• Journal of the Korean Ceramic Society
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• v.42 no.9 s.280
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• pp.624-630
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• 2005

To investigate the possibility of the $ZrO_2$ buffer layer as the insulator for the Metal-Ferroelectric-Insulator-semiconductor (MFIS) structure, $ZrO_2$ and $SrBi_2Ta_2O_9$ (SBT) thin films were deposited on the P-type Si(111) wafer by the R.F. magnetron-sputtering method. According to the process with and without the post-annealing of the $ZrO_2$ buffer layer and SBT thin film, the diffusion amount of Sr, Bi, Ta elements show slight difference through the Glow Discharge Spectrometer (GDS) analysis. From X-ray Photoelectron Spectroscopy (XPS) results, we could confirm that the post-annealing process affects the chemical binding condition of the interface between the $ZrO_2$ thin film and the Si substrate. Compared to the MFIS structure without the post-annealing of the $ZrO_2$ buffer layer, memory window value of MFlS structure with post-annealing of the $ZrO_2$ buffer layer were considerably improved. The window memory of the Pt/SBT (260 nm, $800^{\circ}C)/ZrO_2$ (20 nm) structure increases from 0.75 to 2.2 V under the applied voltage of 9 V after post-annealing.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.5
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• pp.370-373
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• 2011

We investigated the effects of low temperature ($500^{\circ}C$) $O_2$ annealing on the characteristics of hafnium silicate ($HfSi_xO_y$) films deposited on a Si substrate by atomic layer deposition (ALD). We found that the post deposition annealing under oxidizing ambient causes the oxidation of residual Hf metal components, resulting in the improvement of electrical characteristics such as flat band voltage shift (${\Delta}V_{fb}$) by hysteresis without oxide capacitance reduction. We suggest that post deposition annealing under oxidizing ambient is necessary to improve the electrical characteristics of $HfSi_xO_y$ films deposited by ALD.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.53 no.5
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• pp.241-247
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• 2004

The composites were fabricated 61 vol.%$\alpha$-$\alpha$-SiC and 39vol.% WC powders with the liquid forming additives of 12wt% $Al_2$O$_3$＋Y$_2$O$_3$ by pressureless annealing at 1700, 1800, 190$0^{\circ}C$ for 4 hours. The result of phase analysis of composites by XRD revealed $\alpha$-SiC(2H), WC, and YAG(Al$_{5}$ Y$_3$O$_{12}$ ) crystal phase. The relative density, the flexural strength, fracture toughness and Young's modulus showed respectively the highest value of 99.4%, 375.76㎫, 5.79㎫ㆍm$\frac{1}{2}$, and 106.43㎬ for composite by pressureless annealing temperature 190$0^{\circ}C$ at room temperature. The electrical resistivity showed the lowest value of 1.47${\times}$10$^{-3}$ $\Omega$$.$cm for composite by pressureless annealing temperature 190$0^{\circ}C$ at $25^{\circ}C$. The electrical resistivity of the $\alpha$-SiC-WC composites was all positive temperature cofficient resistance (PTCR) in the temperature ranges from $25^{\circ}C$ to 50$0^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05c
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• pp.67-70
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• 2002

The composites were fabricated 61vol% ${\beta}$-SiC and 39vol.% $TiB_2$ powders with the liquid forming additives of 8, 12, 16wt% $Al_2O_3+Y_2O_3$ by pressureless annealing at $1650^{\circ}C$ for 4 hours to form YAG. The result of phase analysis of composites by XRD revealed ${\alpha}$-SiC(6H), $TiB_2$, and YAG($Al_5Y_3O_{12}$) crystal phase. The relative density and the Young's modulus showed the highest value of 82.29% and 54.60 Gpa for composites added with 16wt% $Al_2O_3+Y_2O_3$ additives at room temperature.