• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.1500-1502
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• 2000

In this study, we have investigated the photoinduced anisotropy (PA) phenomena by the assisted. electric field effect on $As_{40}Ge_{10}Se_{15}S_{35}$ thin films. Investigation of photoinduced anisotropy on the assisted electric field effect was carried out using a He-Ne laser beams (inducing and probing beams) illuminating the same area of the thin film. To investigate the effect of electric field, various bias voltages applied. The result is shown the photoinduced anisotropy dependence on electric field. Also. we obtained the property of photoinduced anisotropy in the electric field effects by various voltages.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.288-288
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• 2009

We have studied polarity effects of dielectric anisotropy effects on electro-optical characteristics of a twisted nematic mode driven by fringe electric field, which has wide viewing angle characteristics. Our device is designed as normally black mode between parallel polarizers. The perfect polarization conversion of incident light, which passes through a polarizer, is achieved, when it passes through the twisted liquid crystal (LC) layer. If an electric field is applied, the LC molecules with a positive (or negative) dielectric anisotropy rotate parallel (or perpendicular) to the horizontal component of a fringe electric field as increasing transmittance. From the calculated results, enhanced transmittance of the fringe field-twisted nematic (FF-TN) mode with positive dielectric anisotropy of + 8.2 can be obtained.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.303-305
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• 2000

The effect of anisotropy field on the high frequency magnetic characteristics of FeTaN films was investigated. Those films show good magnetic properties : 4$\pi$Ms of 13KG, Hc of 0.6 Oe, effective permeability(${\mu}$') of 800 with a stable frequency response up to 800MHz. The films also show a large anisotropy field(Hk) over 21Oe. It result from the increased anisotropy of patterned FeTaN films. The combination of high saturation magnetization and relatively high Hk in these films is believed to the partly responsible for FeTaN for the excellent high-frequency behavior.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.399-400
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• 2008

The light efficiency of fringe-field switching (FFS) mode when using a liquid crystal (LC) with positive dielectric anisotropy was found to be dependent on the magnitude of dielectric anisotropy, such that the lower dielectric anisotropy, the higher. We studied out not only light efficiency but also response time according to dependence on the magnitude of dielectric anisotropy. Rising and decay time became fast and slow respectively according to decreasing the magnitude of dielectric anisotropy. This paper investigates electro-optical characteristic of FFS mode using LC with a positive dielectric anisotropy dependent on the magnitude of dielectric anisotropy of the LC.

• Journal of Magnetics
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• v.19 no.4
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• pp.340-344
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• 2014

An effective process was employed for synthesizing anisotropic magnetic $SmCo_7$-type alloy flakes with high coercivity, which is highly desirable for many applications. The highest coercivity of 16.3 kOe corresponds to a typical flake thickness of 200 nm for the 3-h ball-milled sample. The anisotropy field was calculated by measuring the parallel and perpendicular directions to the easy magnetization direction of the powders. The anisotropy field decreased with the increase of the ball milling time, thus indicating that the decrease of coercivity was mainly caused by the reduction of the anisotropy field. Microstructure analysis indicated that the morphology, grain size, and anisotropy field of these samples have a great influence on the magnetic properties.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.8
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• pp.720-725
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• 2002

The fringe-field switching (FFS) mode was known to exhibit both a wide viewing angle and high transmittance, especially when using the liquid crystal (LC) with negative dielectric anisotropy. In the device, the LC director rotates almost in-plane. However, in the bright state the device shows bluish and yellowish color along parallel and perpendicular to the LC director at off-normal directions since the LC director rotates only in one direction. Such a problem was greatly improved using a wedge shape of only pixel electrodes. In this way two different field directions exist in a pixel, enabling the LC director to rotate in two opposite directions. Consequently, owing to dual domain effect when using the LC with negative dielectric anisotropy, the viewing angle characteristics are greatly improved.

• Progress in Superconductivity
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• v.12 no.1
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• pp.36-40
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• 2010

We have studied the anisotropy of the London penetration depth of carbon doped $MgB_2$ single crystals, which was obtained from reversible magnetization measurements with the magnetic field both parallel and perpendicular to the c-axis. Similar to the pure $MgB_2$, the anisotropy of the upper critical field ${\gamma}_H$ decrease with temperature while the anisotropy of the London penetration depth ${\gamma}_{\lambda}$ slowly increases with temperature. However, the temperature dependence of ${\gamma}_H$ is drastically reduced and the value of ${\gamma}_{\lambda}$ becomes nearly ~1 as C is introduced. These results indicate that C substitution increases impurity scattering mainly in the $\sigma$ bands. The temperature dependence of the anisotropies agree well with the theoretical predictions with impurity scattering.

• Journal of the Korean Magnetics Society
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• v.15 no.5
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• pp.265-269
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• 2005

Exchange bias effect of a various layered thin films were studied by FMR measurment. In plane angular dependence of a resonance field distribution which measured by FMR was analysed as a combined effect of an unidirectional anisotropy and an uniaxial anisotropy. Exchange biased NiFe/IrMn, IrMn/NiFe/IrMn, and NiFe/IrMn/CoFe thin films showed larger unidirectional anisotropy field and uniaxial anisotropy field with compared to that of an unbiased NiFe single thin film. In case of NiFe/Cu/IrMn, the film with thick Cu layer exhibited a similar trend to the unbiased NiFe thin film. NiFe/IrMn/CoFe thin film showed two resonance field distribution due to different ferromagnetic layers. In additon to the resonance field, the line width was also analysed with related to exchange bias effect.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.11
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• pp.1008-1013
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• 2003

We have studied the effect of black matrix (BM) according to the dielectric anisotropy of liquid crystals (LCs) for a homogeneously aligned LC cell driven by fringe-electric field. The results show that for a LC with positive dielectric anisotropy (+LC) there is a large transmittance change when using a conductive BM, whereas the transmittance change is low for a LC with negative dielectric anisotropy (-LC). The conductive BM existing on top substrate produces vertical electric field, which makes the LC molecules be tilt upward from the substrate and have small twist angle for the +LC. However, for the -LC the conductive BM affects the LC distribution only slightly due to characteristic of the -LC orienting perpendicular to the field. Therefore, for the +LC the electro-optic characteristics are strongly dependent on conductivity of the BM on top substrate in a homogeneous liquid crystal cell driven by fringe-electric field.

• Journal of Adhesion and Interface
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• v.20 no.4
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• pp.155-161
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• 2019

Understanding charge transport anisotropy at the interface of conjugated nanostructures basically gives insight into structure-property relationship in organic field-effect transistors (OFET). Here, the anisotropy of the field-effect mobility at the interface between 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS-pentacene) single crystal with cofacial molecular stacks in a-b basal plane and SiO gate dielectric was investigated. A solvent exchange method has been used in order for TIPS-pentacene single crystals to be grown on the surface of SiO₂ thin film, corresponding to the charge accumulation at the interface in OFET structure. In TIPS-pentacene OFET, the anisotropy ratio between the highest and lowest measured mobility is revealed to be 5.2. By analyzing the interaction of a conjugated unit in TIPS-pentacene with the nearest neighbor units, the mobility anisotropy can be rationalized by differences in HOMO-level coupling and hopping routes of charge carriers. The theoretical estimation of anisotropy based on HOMO-level coupling is also consistent with the experimental result.