Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)

The Korean Institute of Electrical Engineers (대한전기학회)
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Dependence by the electric field effect in the photoinduced anisotropy(PA) of the chalcogenide thin film.

칼코게나이드 박막에서의 광유기 이방성(PA)의 전계효과 의존성

  • Jang, Sun-Joo (Dept. of Electronic Materials Eng. Kwangwoon University) ;
  • Park, Jong-Hha (Dept. of Electronic Materials Eng. Kwangwoon University) ;
  • Yeo, Choel-Ho (Dept. of Electronic Materials Eng. Kwangwoon University) ;
  • Park, Jung-Il (Dept. of Electronic Materials Eng. Kwangwoon University) ;
  • Lee, Young-Jong (Dept. of Electronic Eng., YeoJoo Institute) ;
  • Chung, Hong-Bay (Dept. of Electronic Materials Eng. Kwangwoon University)
  • 장선주 (광운대학교 공과대학 전자재료공학과) ;
  • 박종화 (광운대학교 공과대학 전자재료공학과) ;
  • 여철호 (광운대학교 공과대학 전자재료공학과) ;
  • 박정일 (광운대학교 공과대학 전자재료공학과) ;
  • 이영종 (여주대학 전자공학과) ;
  • 정홍배 (광운대학교 공과대학 전자재료공학과)
  • Published : 2000.07.17
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Abstract

In this study, we have investigated the photoinduced anisotropy (PA) phenomena by the assisted. electric field effect on $As_{40}Ge_{10}Se_{15}S_{35}$ thin films. Investigation of photoinduced anisotropy on the assisted electric field effect was carried out using a He-Ne laser beams (inducing and probing beams) illuminating the same area of the thin film. To investigate the effect of electric field, various bias voltages applied. The result is shown the photoinduced anisotropy dependence on electric field. Also. we obtained the property of photoinduced anisotropy in the electric field effects by various voltages.

Keywords