• 한국재료학회:학술대회논문집
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• 한국재료학회 1999년도 춘계학술발표강연 및 눈문개요집
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• pp.150-150
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• 1999

• 한국결정성장학회지
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• 제16권6호
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• pp.256-259
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• 2006

Vapor phase epitaxy(VPE)법을 사용하여 amorphous $SiO_x$. nanowires를 성장시켰다. Ni thin film을 촉매로 사용하여 Si 기판위에 $800{\sim}1100^{\circ}C$ 범위의 온도에서 성장시켰으며, $SiO_x$ nanowires의 성장 메커니즘은 Vapor-liquid-solid(VLS)으로 확인되었다. $SiO_x$ nanowires의 shape와 morphology는 scanning electron microscope(SEM)으로 분석하였으며, cotton-like형태이고 길이는 $10{\mu}m$정도였다. 그리고 구조적 특징은 transmission electron microscope(TEM)으로 관찰하였고, $SiO_x$ nanowires의 성분 분석은 energy dispersed X-ray spectroscopy(EDS)로 하였다. EDX spectrum으로 nanowires가 Si와 O로 구성되어졌음을 확인하였다.

• Journal of Welding and Joining
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• 제15권3호
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• pp.99-108
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• 1997

For the conventional welding method, the high heat transfer makes the crystallization of the work material unavoidable. Whereas the laser is able to weld the amorphous metal without a crystallized zone, because heat transfer is limited withn a very small restricted volume. In this paper, the possibilities and the limits of the laser welding in a deep frozen environment by liquid nitrogen were studied to utilize the advantageous properties of amorphous metal foils. The author investigated, after laser welding in a deep frozen environment with a solid state laser (Nd:YAG-laser), the achievable strengths and the influences of the laser beam parameters on the strengths.

• 한국표면공학회지
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• 제47권1호
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• pp.20-24
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• 2014

Joule heat is generated by applying an electric filed to a conductive layer located beneath or above the amorphous silicon film, and is used to raise the temperature of the silicon film to crystallization temperature. An electric field was applied to an indium tin oxide (ITO) conductive layer to induce Joule heating in order to carry out the crystallization of amorphous silicon. Polycrystalline silicon was produced within the range of a millisecond. To investigate the kinetics of Joule-heating induced crystallization (JIC) solid phase crystallization was conducted using amorphous silicon films deposited by plasma enhanced chemical vapor deposition and using tube furnace in nitrogen ambient. Microscopic and macroscopic uniformity of crystallinity of JIC poly-Si was measured to have better uniformity compared to that of poly-Si produced by other methods such as metal induced crystallization and Excimer laser crystallization.

• 한국자기학회지
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• 제5권5호
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• pp.511-514
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• 1995

The crystallization kinetics of $Fe_{73.5}Si_{13.5}B_{9}Cu_{1}Nb_{3}$ amorphous alloy has been investigated using differential scanning calorimetry (DSC). The crystallization process had two stages, i.e. precipitation of the $\alpha$-Fe(Si) solid solution and the tetragonal borides. The isothermal transformation data of the amorphous alloy has been fitted successfully to the generalized Johnson-Mehl-Avrami equation. The mean time exponent, n, obtained is close to 2.5. The value of n=2.5 may be interpreted as being due to a diffusion-controlled transformation process with a constant nucleation rate, one likely transformation mode for the crystallization of metallic amorphous alloys. The activation energy of the overall crystallization process deduced from the time to 50% crystallization are about 81 kcal/mole. The value is of the same order as those estimated from viscous flow.

• 마이크로전자및패키징학회지
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• 제25권4호
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• pp.101-104
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• 2018

An electric field was applied to a Mo conductive layer in the sandwiched structure of $glass/SiO_2/Mo/SiO_2/a-Si$ to induce Joule heating in order to generate the intense heat needed to carry out the crystallization of amorphous silicon. Polycrystalline silicon was produced via Joule heating through a solid state transformation. Blanket crystallization was accomplished within the range of millisecond, thus demonstrating the possibility of a new crystallization route for amorphous silicon films. The grain size of JIC poly-Si can be varied from few tens of nanometers to the one having the larger grain size exceeding that of excimer laser crystallized (ELC) poly-Si according to transmission electron microscopy. We report here the blanket crystallization of amorphous silicon films using the $2^{nd}$ generation glass substrate.

• Journal of Information Display
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• 제10권3호
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• pp.117-120
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• 2009

A new crystallization method for amorphous silicon, called selective area heating (SAH), was proposed. The purpose of SAH is to improve the reliability of amorphous silicon films with extremely low thermal budgets to the glass substrate. The crystallization time shortened from that of the conventional solid-phase crystallization method. An isolated thin heater for SAH was fabricated on a quartz substrate with a Pt layer. To investigate the crystalline properties, Raman scattering spectra were used. The crystalline transverse optic phonon peak was at about 519 $cm^{-1}$, which shows that the films were crystallized. The effect of the crystallization time on the varying thickness of the $SiO_2$ films was investigated. The crystallization area in the 400nm-thick $SiO_2$ film was larger than those of the $SiO_2$ films with other thicknesses after SAH at 16 W for 2 min. The results show that a $SiO_2$ capping layer acts as storage layer for thermal energy. SAH is thus suggested as a new crystallization method for large-area electronic device applications.

• 한국분말재료학회지
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• 제13권5호
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• pp.305-312
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• 2006

Amorphous carbon nanotubes were synthesized by a reaction of benzene, ferrocene and Na mixture in a small autoclave at temperatures as low as $400^{\circ}C$. The resulting carbon nanotubes were short and straight, but their inner hole was filled with residual products. The addition of quartz to the reacting mixture considerably promoted the formation of carbon nanotubes. A careful examination of powder structure suggested that the nanotubes in this process were mainly formed by surface diffusion of carbon atoms at the surface of solid catalytic particles, not by VLS(vapor-liquid-solid) mechanism.

• 한국생산제조학회지
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• 제23권2호
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• pp.133-137
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• 2014

The recent development of electro-optic devices and anticorrosion media has made it necessary investigate infrared optical systems with solid-solid interfaces of materials with amorphous characteristics. One of the most promising classes of materials for these purposes seems to be chalcogenide glasses, which are based on the Ge_Sb_Se system, have drawn much attention because of their use in preparing optical lenses and fibers that are transparent in the range of 3-12 um. In this study, a standard melt-quenching technique was used to prepare amorphous Ge_Sb_Sechalcogenideto be used in the design and manufacture of infrared optical products. The results of structural, optical, and surface roughness analyses of high purity Ge_Sb_Sechalcogenide glasses after various annealing processes reported.

• 한국분말재료학회지
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• 제10권3호
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• pp.164-167
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• 2003

The mechanical alloying effect has been studied on the three Cu-based alloy systems with a positive heat of mixing. The extended bcc solid solution has been formed in the Cu-V system and an amorphous phase in the Cu-Ta system. However, it is round that a mixture of nanocrystalline Cu and Mo Is formed in the Cu-Mo system. The neutron diffraction has been employed at a main tool to characterize the detailed amorphization process. The formation of an amorphous phase in Cu-Ta system can be understood by assuming that the smaller Cu atoms preferentially enter into the bcc Ta lattice during ball milling.