• Journal of Mechanical Science and Technology
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• v.18 no.11
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• pp.2042-2048
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• 2004

A molecular dynamics study has been conducted on an external-force-field-induced isothermal crystallization process of amorphous structures as a new low-temperature athermal crystallization process. An external cyclic-force field with a dc bias is imposed on molecules selected randomly in an amorphous-phase of argon. Multiple peaks smoothed out in the radial distribution functions for amorphous states appear very clearly during the crystallization process that cannot be achieved otherwise. When the amorphous material is locally exposed to an external force field, crystallization starts and propagates from the interfacial region and crystallization growth rates can be estimated.

• Applied Microscopy
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• v.45 no.2
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• pp.63-73
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• 2015

Shear banding is an evidence of plastic instability that localizes large shear strains in a relatively thin band when a material is plastically deformed. Shear bands have attracted much attention in amorphous metals, because shear bands are the key feature that controls the plastic deformation process. In this article, we review recent advances in understanding of the shear bands in amorphous metals regarding: dislocations versus shear bands, the formation of shear bands, hot versus cold shear bands, and property manipulation by shear band engineering. Although there are many key issues that remain puzzling, the understanding built-up from these approaches will provide a new insight for tailoring shear bands in amorphous metals, which potentially leads to unique property changes as well as improved mechanical properties. Indeed, this effort might open a new era to the future use of amorphous metals as a new menu of engineering materials.

• Proceedings of the KSME Conference
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• 2003.11a
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• pp.1804-1809
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• 2003

The purpose of this study is to clarify the bulk/sheet forming characteristics of bulk amorphous alloys in the supercooled liquid state. The temperature dependences of Newtonian viscosities of amorphous materials are obtained based on the previous experimental works. Finite element analyses for compression forming and sheet deep drawing of amorphous materials are performed. Effects of friction coefficients and temperature are examined and formability of amorphous material is explained in detail.

• Journal of Korea Foundry Society
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• v.22 no.6
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• pp.304-308
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• 2002

The new Cu-Zr-Ti-Ni-Pd amorphous alloy system has been introduced and manufactured using melt-spinning and Cu-mold die casting methods. Amorphous formability, the supercooled liquid region before crystallization and mechanical properties of the alloys were examined. The reduced glass transition temperature(Trg = Tg/Tm) and the supercooled liquid region(${\Delta}$Tx = Tx-Tg) of $Cu_{49}Zr_{30}Ti_{10}Ni_5Pb_6$ alloy were 0.620 and 57 K respectively. $Cu_{49}Zr_{30}Ti_{10}Ni_5Pb_6$ amorphous alloy was produced in the rod shape with 2mm diameter using the Cu-mold die casting. The hardness value of the amorphous bulk alloy was 432 DPN.

• Korean Journal of Metals and Materials
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• v.46 no.5
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• pp.321-327
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• 2008

Cu based amorphous ($Cu_{54}Zr_{22}Ti_{18}Ni_6$) coating was produced by cold spraying as a new fabrication process. The microstructure and macroscopic properties of amorphous coating layer was investigated and compared with those of cold sprayed pure Cu coating. Amorphous powders were prepared by gas atomization and Al 6061 was used as the substrate plate. X-ray diffraction results showed that Cu based amorphous powder could be successfully deposited by cold spraying without any crystallization. The Cu based amorphous coating layer ($300{\sim}400{\mu}m$ thickness) contained 4.87% porosity. The hardness of Cu based amorphous coating represented $412.8H_v$, which was correspond to 68% of the hardness of injection casted bulk amorphous material. The wear resistance of Cu based amorphous coating was found to be three times higher than that of pure Cu coating. The 3-point bending test results showed that the adhesion strength of Cu based amorphous coating layer was higher than that pure Cu coating. It was also observed that hard Cu base amorphous particle could easily deform soft substrate by particle collisions and thus generated strong adhesion between coating and substrate. However, the amorphous coating layer unexpectedly represented lower corrosion resistance than pure Cu coating, which might be resulted from the higher content of porosity in the cold sprayed amorphous coating.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.05a
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• pp.130-132
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• 2006

In this paper, the author describes a-C films grown in pure methane plasma without any diluent gas by using RF plasma-enhanced CVD, and the variations in their structural features and surface morphologies are examined as a function of substrate temperature. Raman spectroscopy and scanning electron microscopy were performed to characterize the properties of the film.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1988.10a
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• pp.91-94
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• 1988

This paper is investigated on the diffraction grating formation of the amorphous As-Se-S-Ge films. AS$\_$40/Se$\_$15/S$\_$36/Ge$\_$10/ film of thickness 0.76 $\mu\textrm{m}$ has achieved a high diffraction efficiency of 4.6%. In this film, high diffraction efficiency is increased to 18% by chemical etching.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.05a
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• pp.42-45
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• 1992

The poly silicon thin films were prepared by solid phase crystallization at 600$^{\circ}C$ of amorphous silicon films deposited on Corning 7059 glass and (100) silicon wafer with thermally grown SiO$_2$substrate by plasma enhanced chemical vapor deposition with varying rf power, deposition temperature, total flow rate. Crystallization time, microstructure, absorption coefficients were investigated by RAMAN, XRD analysis and UV transmittance measurement. Crystallization time of amorphous silicon films was increased with increasing rf power, decreasing deposition temperature and decreasing total flow rate.

• Transactions on Electrical and Electronic Materials
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• v.9 no.6
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• pp.223-226
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• 2008

$Ge_1Se_1Te_2$ chalcogenide amorphous materials was prepared by the conventional melt-quenching method. Samples were processed bye-beam evaporator systems and RF-sputtering systems. Phase change characteristics were analyzed by measuring glassification temperature, crystallization temperature and density of bulk material. The thermal characteristics were measured at the temperature between 300 K and 700 K, and the electrical characteristics were studied within the range from 0 V to 3 V. The obtained results agree with the electrothermal model for Phase-Change Random Access Memory.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.407-410
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• 1998

During the past decade, substantial research effort has been directed into the development of rechargeable lithium batteries. Although some improvements in cycle life and efficiency have been achieved, the reversibility of the lithium electrode remains as a significant problem in aprotic solvent based electrolyte. The major problems limiting cycle life are short circuits resulting from growth of lithium dendrites, and macroscopic shape changes during the recharge process. As an anode material of lithium rechargeable battery, amorphous carbon materials have been studied extensively because of their high electrochemical performance. The polyacene materials prepared from phenol refine at relatively low temperature(550∼750$^{\circ}C$) show a highly Li-doped state up C$_2$Li state without liberation of Li cluster. So it has largely layered distance 4${\AA}$. The Li storage mechanism as well as the large hysterisis observed in the voltage-capacity profile of the amorphous carbone materials are still the subjects of controversy. We prepared each polyacene material various temperature and investigated electrochemical property. The mole ratio of [H]/[C] is 0.027∼0.015 range.