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Molecular Dynamics Study on External Field Induced Crystallization of Amorphous Argon Structure  

Park, Seung-Ho (Department of Mechanical and System Design Engineering, Hongik University)
Cho, Sung-San (Department of Mechanical and System Design Engineering, Hongik University)
Lee, Joon-Sik (School of Mechanical and Aerospace Engineering, Seoul National University)
Choi, Young-Ki (School of Mechanical Engineering, Chung-Ang University)
Kwon, Oh-Myoung (School of Mechanical Engineering, Korea University)
Publication Information
Journal of Mechanical Science and Technology / v.18, no.11, 2004 , pp. 2042-2048 More about this Journal
Abstract
A molecular dynamics study has been conducted on an external-force-field-induced isothermal crystallization process of amorphous structures as a new low-temperature athermal crystallization process. An external cyclic-force field with a dc bias is imposed on molecules selected randomly in an amorphous-phase of argon. Multiple peaks smoothed out in the radial distribution functions for amorphous states appear very clearly during the crystallization process that cannot be achieved otherwise. When the amorphous material is locally exposed to an external force field, crystallization starts and propagates from the interfacial region and crystallization growth rates can be estimated.
Keywords
Molecular Dynamics Simulation; Crystallization; Amorphous Structure;
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1 Yoon, S. Y., Park, S. J., Kim, K. H. and Jang, J., 2001, 'Metal-Induced Crystallization of Amorphous Silicon,' Thin Solid Films, Vol. 383, pp.34-38   DOI   ScienceOn
2 Zhao, Y., Wang, W., Yun, F., Xu, Y., Liao, X., Ma, Z., Yue, G. and Kong, G., 2000, 'Polycrystalline Silicon Films Prepared by Improved Pulsed Rapid Thermal Annealing,' Solar Energy Materials & Solar Cells, Vol. 62, pp. 143-148   DOI   ScienceOn
3 Tanemura, M., Hiwatari, Y., Matsuda, H., Ogawa, T., Ogita, N. and Ueda, A., 1977, 'Geometrical Analysis of Crystallization of the Soft-Core Model,' Prog. Theor. Phys., Vol. 58, pp. 1079-1095   DOI
4 Weber, B., Gartner, K. and Stock, D. M., 1997, 'MD-Simulation of Ion Induced Crystallization of Amorphization Process in Silicon,' Nuclear Instruments and Methods in Physics Research B, Vol. 127/128, pp. 239-243   DOI   ScienceOn
5 Yang, J. X., Gould, H. and Klein, W., 1998, 'Molecular Dynamics Investigation of Deeply Quenched Liquids,' Physical Review Letters, Vol. 60, No. 25, pp. 2665-2668   DOI   ScienceOn
6 Pickering, S. and Snook, I., 1997, 'Molecular Dynamics Study of the Crystallization of Metastable Fluids,' Physica A, Vol. 240, pp. 297-304   DOI   ScienceOn
7 Sameshima, T., 1998, 'Status of Si Thin Film Transistors,' J. Non-Crystalline Solids, Vol. 227-230, pp. 1196-1201   DOI   ScienceOn
8 Swope, W. C. and Anderson, H. C., 1990, '$10^6-Particle$ Molecular-Dynamics Study of Homogeneous Nucleation of Crystals in a Supercooled Atomic Liquid,' Physical Review B, Vol. 41, No. 10, pp. 7042-7054   DOI   ScienceOn
9 Swope, W. C., Anderson, H. C., Berens, P. H. and Wilson, K. R., 1982, 'A Computer Simulation Method for the Calculation of Equilibrium Constants for the Formation of Physical Clusters of Molecules : Application to Small Water Clusters,' J. Chem. Phys., Vol. 76, pp. 637-649   DOI
10 Tanaka, K., Maruyama, E., Shimada, T. and Okamoto, H., 1999, Amorphous Silicon, John Wiley & Sons, pp.27-29
11 Motooka, T., 1997, 'Molecular Dynamics Simulations for Amorphous/Crystalline Si Interface : Amorphization and Crystallization Induced by Simple Defects,' Nuclear Instruments and Methods in Physics Research B, Vol. 127/128, pp.244-247   DOI   ScienceOn
12 Motooka, T., 1998, 'The Role of Defects during Amorphization and Crysatllization Processes in Ion Implanted Si,' Materials Science and Engineering, Vol. A253, pp. 42-49   DOI   ScienceOn
13 Park, S. H., Kim, H. J., Lee, D. B., Lee, J. S., Choi, Y. K. and Kwon, O. M., 2004, 'Heterogeneous Crystallization of Amorphous Silicon Expedited by External Force Fields :' A Molecular Dynamics Study,' Superlattices and Microstructures, Vol. 35, pp. 205-215   DOI   ScienceOn
14 Kittel, C., 1996, Introduction to Solid State Physics, 7th Ed., John Wiley & Sons, p. 126
15 Haile, J. M., 1992, Molecular Dynamics Simulation, John Wiley & Sons, pp.260-267
16 Lee, J. I., Park, S. H., Kwon, O. M., Choi, Y. K. and Lee, J. S., 2002, 'Characterization of Thin Liquid Films Using Molecular Dynamics Simulation,' KSME Int. J., Vol., pp. 1477-1484   과학기술학회마을
17 Mandell, M. J., McTague, J. P. and Rahman, A., 1976, 'Crystal Nucleation in a Three-Dimensional Lennard-Jones System : A Molecular Dynamics Study,' J. Chem. Phys., Vol. 64, pp. 3699-3702   DOI
18 Mandell, M. J. McTague, J. P. and Rahman, A., 1977, 'Crystal Nucleation in a Three-Dimensional Lennard-Jones System. II. Nucleation Kinetics for 256 and 500 Particles,' J. Chem. Phys., Vol. 66, pp. 3070-3075   DOI
19 Caturla, M. J., Diaz de la Rubia, T. and Gilmor, G. H., 1995, 'Recrystallization of a Planar Amorphous-Crystalline Interface in Silicon by Low Energy Recoils : A Molecular Dynamics Study,' J. Appl. Phys., Vol. 77, pp. 3121-3125   DOI   ScienceOn
20 Jang, J., Oh, J. Y., Kim, S. K., Choi, Y. J., Yoon, S. Y. and Kim, C. O., 1998, 'Electric-Field-Enhanced Crystallization of Amorphous Silicon,' Nature, Vol. 395, pp. 481-483   DOI   ScienceOn
21 Cho, S. S. and Park, S. H., 2002,' Molecular Dynamics Simulation of Adhesion Processes,' KSME Int. J., Vol. 16, pp. 1440-1447   과학기술학회마을
22 Allen, M. P. and Tildesley, D. J., 1987, Computer Simulation of Liquids, Oxford University Press, New York
23 Ahn, J. H., Lee, J. N., Kim, Y. C. and Ahn, B. T., 2002, 'Microwave-Induced Low-Temperature Crystallization of Amorphous Si Thin Films,' Current Applied Physics, Vol. 2, pp. 135-139   DOI   ScienceOn