• 한국표면공학회지
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• 제48권4호
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• pp.163-168
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• 2015

Graphene has attracted much attention due to its remarkable physical properties and potential applications in many fields. In special, the electronic properties of graphene are influenced by the number of layer, stacking sequence, edge state, and doping of foreign elements. Recently, many efforts have been dedicated to alter the electronic properties by doping of various species, such as hydrogen, oxygen, nitrogen, ammonia and etc. Here, we report our recent results of plasma doping on graphene. We prepared mechanically exfoliated graphene, and performed the plasma treatment using ammonia gas for nitrogen doping. The direct-current plasma system was used for plasma ignition. The doping level was estimated from the number of peak shift of G-band in Raman spectra. The upshift of G-band was observed after ammonia plasma treatment, which implies electron doping to graphene.

• 한국대기환경학회지
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• 제32권5호
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• pp.526-535
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• 2016

Recently, fine dust in atmosphere have been considerably issued as a harmful element for human. Nitrogen oxide ($NO_x$) exhausted from diesel engines and power plants has been disclosed as a main source of secondary production of fine dust. In order to prevent exhausting these nitrogenous compounds into atmosphere, a treatment system with selective catalytic reduction (SCR) catalyst with ammonia as a reductant has been used in various industries. Urea solution has been widely studied to supply ammonia into a SCR catalytic reactor, safely. However, the conversion of urea solution to ammonia has several challenges, especially on a slow conversion velocity. In the present study, a fast urea conversion system including a plasma burner was suggested and designed to evaluate the performances of urea conversion and initial operation time. A designed lab-scale facility has a plasma burner, urea nozzle, mixer, and SCR catalyst which is for hydrolysis of isocyane. Flow rate of methane that is a fuel of the plasma burner was varied to control temperatures in the urea conversion facility. From experimental results, it is found that urea can be converted into ammonia using high temperature condition of above $400^{\circ}C$. In the designed test facility, it is found that ammonia can be produced within 1 min from urea injection and the result shows prospect commercialization of proposed technology in the SCR facilities.

• Fisheries and Aquatic Sciences
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• 제20권3호
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• pp.4.1-4.6
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• 2017

Juvenile Anoplopoma fimbria (mean length $16.8{\pm}2.2cm$, and mean weight $72.8{\pm}5.4g$) were exposed for 2 months with different levels of ammonia (0, 0.25, 0.50, 0.75, 1.00, and 1.25 mg/L). Growth performances such as daily length gain, daily weight gain, condition factor, and hepatosomatic index were significantly decreased by ammonia exposure. Hematological parameters such as red blood cell (RBC) count, hematocrit, and hemoglobin were also significantly decreased. In plasma inorganic components, calcium and magnesium were significantly decreased by ammonia exposure. In plasma organic components, there was no alteration in cholesterol and total protein. In enzyme plasma components, glutamic oxalate transaminase (GOT) and glutamic pyruvate transaminase (GPT) were significantly increased. The results of this study indicated that ammonia exposure can induce significant growth reduction and blood biochemistry alterations of A. fimbria.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.183-184
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• 2013

Two main MBE growth techniques have been used: plasma-assisted MBE (PA-MBE), which utilizes a rf plasma to supply active nitrogen, and ammonia MBE, in which nitrogen is supplied by pyrolysis of NH3 on the sample surface during growth. PA-MBE is typically performed under metal-rich growth conditions, which results in the formation of gallium droplets on the sample surface and a narrow range of conditions for optimal growth. In contrast, high-quality GaN films can be grown by ammonia MBE under an excess nitrogen flux, which in principle should result in improved device uniformity due to the elimination of droplets and wider range of stable growth conditions. A drawback of ammonia MBE, on the other hand, is a serious memory effect of NH3 condensed on the cryo-panels and the vicinity of heaters, which ruins the control of critical growth stages, i.e. the native oxide desorption and the surface reconstruction, and the accurate control of V/III ratio, especially in the initial stage of seed layer growth. In this paper, we demonstrate that the reliable and reproducible growth of GaN on Si (110) substrates is successfully achieved by combining two MBE growth technologies using rf plasma and ammonia and setting a proper growth protocol. Samples were grown in a MBE system equipped with both a nitrogen rf plasma source (SVT) and an ammonia source. The ammonia gas purity was ＞99.9999% and further purified by using a getter filter. The custom-made injector designed to focus the ammonia flux onto the substrate was used for the gas delivery, while aluminum and gallium were provided via conventional effusion cells. The growth sequence to minimize the residual ammonia and subsequent memory effects is the following: (1) Native oxides are desorbed at $750^{\circ}C$ (Fig. (a) for [$1^-10$] and [001] azimuth) (2) 40 nm thick AlN is first grown using nitrogen rf plasma source at $900^{\circ}C$ nder the optimized condition to maintain the layer by layer growth of AlN buffer layer and slightly Al-rich condition. (Fig. (b)) (3) After switching to ammonia source, GaN growth is initiated with different V/III ratio and temperature conditions. A streaky RHEED pattern with an appearance of a weak ($2{\times}2$) reconstruction characteristic of Ga-polarity is observed all along the growth of subsequent GaN layer under optimized conditions. (Fig. (c)) The structural properties as well as dislocation densities as a function of growth conditions have been investigated using symmetrical and asymmetrical x-ray rocking curves. The electrical characteristics as a function of buffer and GaN layer growth conditions as well as the growth sequence will be also discussed. Figure: (a) RHEED pattern after oxide desorption (b) after 40 nm thick AlN growth using nitrogen rf plasma source and (c) after 600 nm thick GaN growth using ammonia source for (upper) [110] and (lower) [001] azimuth.

• Applied Science and Convergence Technology
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• 제23권1호
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• pp.44-47
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• 2014

In this study, we investigated the basic properties of N-doped ethylcyclohexene plasma polymer thin films that deposited by radio frequency (13.56 MHz) plasma-enhanced chemical vapor deposition (PECVD) method with controlled ammonia flow rate. Ethylcyclohexene was used as organic precursor with hydrogen gas as the precursor bubbler gas. Additionally, ammonia ($NH_3$) gas was used as nitrogen dopant. The as-grown polymerized thin films were analyzed using ellipsometry, Fourier-transform infrared [FT-IR] spectroscopy, UV-Visible spectroscopy, and water contact angle measurement. We found that with increasing plasma power, film thickness is gradually increased while optical transmittance is drastically decreased. However, under the same plasma condition, water contact angle is decreased with increasing $NH_3$ flow rate. The FT-IR spectra showed that the N-doped ethylcyclohexene plasma polymer films were completely fragmented and polymerized from ethylcyclohexane.

• 한국어병학회지
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• 제35권1호
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• pp.65-75
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• 2022

Mirror carp, Cyprinus carpio nudus (weight 26.2±3.1 g, length 11.8±0.5 cm) were exposed to waterborne total ammonia nitrogen (TAN) at 0, 2, 4, 8, 16, 32, 64 and 128 mg TAN/L. The lethal concentration 50 (LC₅₀) of mirror carp, C. carpio nudus exposed to waterborne ammonia was 60.38 mg TAN/L. The red blood cell (RBC) count was significantly reduced by ammonia exposure, whereas there was no significant changes in the hemoglobin concentration and hematocrit value. In the plasma components, glucose, total protein, aspartate aminotransferase (AST) and alkaline phosphatase (ALP) were significantly increased by ammonia exposure. The results of this study suggest that the ammonia exposure to C. carpio nudus affects the survival rates, hematological parameters and plasma components as toxicity.

• 환경생물
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• 제38권1호
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• pp.40-46
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• 2020

본 실험에서 암모니아 급성 노출은 대왕범바리의 혈액학적 성상 및 혈장 성분에 유의적 변화를 나타내었다. 본 실험의 결과 20mg L^-1 이상의 급성 암모니아 노출은 대왕범바리의 혈액학적 성상 및 혈장 성분에 영향을 주어 생리적 변화를 일으키며, 40mg L^-1의 급성 암모니아 농도는 대량 폐사를 유발할 수 있음을 나타낸다. 향후 대왕범바리 바이오플락 양식기술 적용을 위한 양식연구에 이러한 결과를 지표로 활용할 수 있을 것이다.

• 한국세라믹학회지
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• 제51권3호
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• pp.201-207
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• 2014

High-purity aluminum nitride nanopowders were synthesized using an RF induction thermal plasma instrument. Ammonia and nitrogen gases were used as sheath gas to control the reactor atmosphere. Synthesized AlN nanopowders were characterized by XRD, SEM, TEM, EDS, BET, FTIR, and N-O analyses. It was possible to synthesize high-purity AlN nanoparticles through control of the ammonia gas flow rate. However, additional process parameters such as plasma power and reactor pressure had to be controlled for the production of high-purity AlN nanopowders using nitrogen gas.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.242.2-242.2
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• 2014

Plasma-polymer thin films (PPTF) have been deposited on a Si(100) wafer and glass under several conditions such as different RF power by using plasma-enhanced chemical vapor deposition (PECVD) system. Ethylcyclohexane, ammonia gas, hydrogen and argon were utilized as organic precursor, doping gas, bubbler gas and carrier gases, respectively. PPTFs were grown up with RF (ratio frequency using 13.56 MHz) powers in the range of 20~60 watt. PPTFs were characterized by FT-IR (Fourier Transform Infrared), FE-SEM (Scanning Electron Microscope), AFM (Atomic Force Microscope), Contact angle and Probe station. The result of FT-IR measurement showed that the PPTFs have high cross-link density nitrogen doping ratio was also changed with a RF power increasing. AFM and FE-SEM also showed that the PPTFs have smooth surface and thickness. Impedance analyzer was utilized for the measurements of C-V curves having different dielectric constant as RF power.

• 한국어류학회지
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• 제29권1호
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• pp.13-21
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• 2017

본 연구는 능성어(Epinephelus septemfasciatus)를 해수 순환여과양식시스템(RAS)에 적용하는데 문제가 되는 암모니아의 농도 기준을 제시하기 위하여 96시간 동안 암모니아 노출에 따른 생존율 및 혈액학적 특성 변화를 조사하였다. 생존율 실험구의 암모니아 농도는 대조구, 0.35, 0.4, 0.5, 0.8 mg/L였으며, 96-h $LC_{50}$ 농도는 0.6 mg/L로 나타났다. 능성어 치어의 암모니아 96-h $LC_{50}$ 농도인 0.6 mg/L에서 0, 3, 6, 12, 24, 48, 72, 96시간 간격으로 12마리씩 혈액 샘플링을 하였다. 실험구의 암모니아 노출 시간이 경과할수록 혈장 코티졸, 글루코스, GOT 및 GPT 농도가 증가하는 경향을 보였다. 혈장 암모니아와 총 단백질은 암모니아 노출 12시간째까지는 증가하였고 이후로는 감소하였지만, 대조구와 비교하여 유의하게 높은 값을 나타내었다. 또한 혈장 전해질이온($Na^+$, $Cl^-$)과 삼투압은 감소하는 경향이 관찰되었다.