• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.19 no.2
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• pp.257-262
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• 2008

In this paper, the key parameters of $CO_2$ laser(focus depth, air blow rate, total laser beam time, number of pulse) are experimented for thru-hole and scribing line on AIN(aluminum nitride) substrate with high thermal conductivity. And, microstrip line & spiral planar inductor are fabricated on AIN substrate using 5 um Cu-plating with self-masking technique. The microstrip line of AIN has 0.1 dB/mm attenuation at 10 GHz and 6 nH spiral planar inductor has 56 maximum quality factor at 1 GHz. Thus, the AIN substrate is promising for GHz applications of high power area.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.04b
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• pp.3-6
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• 2009

Aluminum nitride (AIN) thin films were deposited on a polycrystalline 3C-SiC intermediate layer by a pulsed reactive magnetron sputtering system. Characteristics of the AIN/SiC heterostructures were investigated by field emission scanning electron microscopy (FE-SEM), atomic force microscopy (AFM), X-ray diffraction (XRD), and Fourier transform infrared spectroscopy (FT-IR). The columnar structure of AIN thin films was observed by FE-SEM. The surface roughness of AlN films on the 3C-SiC buffer layer was measured using AFM. The XRD pattern of AlN films on SiC buffer layers was highly oriented at (002). Full width at half maximum (FWHM) of the rocking curve near (002) reflections was $1.3^{\circ}$. The infrared absorbance spectrum indicated that the residual stress of AIN thin films grown on SiC buffer layers was nearly negligible. The 3C-SiC intermediate layers are promising for the realization of nitride based electronic and mechanical devices.

• Journal of the Korean Ceramic Society
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• v.31 no.1
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• pp.79-87
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• 1994

Aluminum nitride was hydrolyzed in contact with water, evolving the reaction heat of 172 cal/g within 12 hours to form alumina trihydrates. At 4$0^{\circ}C$ >, amorphous alumina hydrate was easily produced by the spontaneous breaks of AlN particle at the beginning of the hydrolysis process, while bayerite was formed by the dissolution-recrystallization processes of amorphous alumina hydrate at the temperature between 4$0^{\circ}C$ and 6$0^{\circ}C$, and pseudo-boehmite was generated on the surface of AlN particle by the condensation process of the corresponding phase at 6$0^{\circ}C$ <. The longer the hydrolysis timje or the higher the value of pH in solution, the more the bayerite phase was produced. However, pseudo-boehmite was easily generated under the following favorable conditions; when the hydrolysis reaction occured rapidly at the beginning and when the absorption of OH radical on the surface of AlN particle was disturbed by ethyl alcohol in a solution. However, aluminum nitride was hardly hydrolyzed in a solution of pH 2.0.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.509-512
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• 2001

Aluminum nitride(AIN) thin films were deposited on silicon substrates using RF magnetron sputtering at various deposition conditions and investigated the characteristics. It was used XRD, AES, SEM, and HP-4145B semiconductor parameter analyzer to analysis deposited AIN thin films. The deposition conditions for the good c-axis orientation were 100 W of RF power, 200$^{\circ}C$ of substrate temperature and 15 mTorr of working Pressure. The leakage current density was less then 1.3${\times}$10$\^$-7/ A/$\textrm{cm}^2$. And it was also investigated the etching properties of deposited AIN thin films for application.

• Journal of the Korean Ceramic Society
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• v.33 no.3
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• pp.285-292
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• 1996

The effect of AlN on the thermal conductivity of aluminum oxide pressurelessly sintered at nitrogen atmos-phere was investigated. Increasing aluminium nitride content up to 1~10 mol% the thermal conductivity of $Al_{2}O_{3}$-AlN system was singnificantly decreased and was constant with adding 20 and 25 mol% aluminium nitride. The thermal conuctivity of $Al_{2}O_{3}$ containing 1~10 mol% the thermal conductivity of $Al_{2}O_{3}$-AlN system was singificantly decreased and was constant with adding 20 and 25mol% aluminum nitride. The thermal conctivity of $Al_{2}O_{3}$ containing 1~10 mol% AlN showed a maximum at $1700^{\circ}C$ and decrea-sed with increasing sintering tempertures. This phenomenon was attributed to $\alpha$-$Al_{2}O_{3}$ and ALON formed by reacting $Al_{2}O_{3}$ with AlN up to $1700^{\circ}C$ and the secondary phases such as ${\gamma}$-ALON ($9Al_{2}O_{3}$.AlN)and $\Phi$($5Al_{2}O_{3}$.AlN) phase above $1750^{\circ}C$ The thermal conductivity of $Al_{2}O_{3}$ containing 20 and 25 mol% AlN showed maximum value at $1800^{\circ}C$ Both $\alpha$-$Al_{2}O_{3}$ and ALON existed up to $1600^{\circ}C$ value at $1800^{\circ}C$ Both $\alpha$-$Al_{2}O_{3}$ and ALON existed up to $1600^{\circ}C$ while only AlON phase existed above $1650^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.743-746
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• 2000

Metal-ferroelectric-insulator-semiconductor(MFIS) devices using Pt/$LiNbO_3$/Si structure were successfully fabricated. The dielectric constant of the AIN film calculated from the capacitance in the accumulation region in the capacitance-voltage(C-V) curve was about 8.2. The gate leakage current density of MIS devices using a aluminum electrode showed the least value of 1$\times$$1O^{-8}$A/$cm^2$ order at the electric field of 500kV/cm. The dielectric constant of $LiNbO_3$film on AIN/Si structure was about 23 derived from 1MHz capacitance-voltage (C-V) measurement and the resistivity of the film at the field of 500kV/cm was about 5.6$\times$ $1O^{13}$ $\Omega$.cm.

• Journal of the Korean Ceramic Society
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• v.45 no.1
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• pp.69-74
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• 2008

The effects of $SiO_2$ impurity on the high temperature resistivities of AIN ceramics have been investigated. When $SiO_2$ was added into 1 wt% $Y_2O_3$-doped AIN, DC resistivities have decreased and electrode polarizations disappeared. Impedance spectroscopy showed two semi-circles at $600^{\circ}C$, which were attributed to grain and grain boundary, respectively. $SiO_2$ doping had more significant effects on the grain resistivity than grain boundary resistivity, implying that doped Si acted as a donor in AIN lattice. In addition, voltage dependency of DC resistivity was observed, which might be related to dependency of size of grain boundary semi-circle on the bias voltage in impedance spectroscopy.

• The Korean Journal of Ceramics
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• v.3 no.4
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• pp.257-262
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• 1997

Aluminum nitride(AIN) thin films were deposited on SiO$_2$/Si substrates by reactive sputtering for the application of SAW devices. The major deposition parameters such as pressure, nitrogen fraction, rf power, substrate distance were changed to find out the optimal condition for c-axis oriented thin films on an amorphous substrate. The effects of deposition parameters on the crystal structure, residual stress, and growth morphology of thin films were characterized by XRD, SEM, and TEM. The FWHM of (002) rocking curve of the films deposited at the proper condition was lower than 2.2$^{\circ}$(C=0.93$^{\circ}$). Cross-sectional TEM showed that self-aligned structure was developed just after slightly random growth at the initial stage. The frequency characteristics of test device fabricated from AIN thin films confirmed their piezoelectric property and applicability for SAW devices.

• Journal of the Korean Ceramic Society
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• v.41 no.2
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• pp.118-124
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• 2004

The properties of AlN made by carbothermal reaction depend on the starting materials, quantity of liquid, the liquid-vapor phase reaction, the N$_2$ flow rate, and the reaction temperature. AlN whisker was synthesized by the VLS and VS methods. Solid ${\alpha}$-A1$_2$O$_3$(AES-11) was carbothermally reduced with carbon black in a high-purity N$_2$ atmosphere with AlF$_3$ to cause whisker grown and additional aluminum liquid to increase whisker yield. Aluminum nitride was perfectly formed at reaction temperatures of 1600$^{\circ}C$. At reaction temperature higher than 1600$^{\circ}C$ the aluminum nitride was completely formed, while the composition remains unaffected. Needle-shaped whiskers formed best at 1600$^{\circ}C$ while higher temperatures disrupted whisker formation. Adding 0 to 15 wt% aluminum to the synthesis favorably affects the microstructure for formation of needle-shaped AlN whisker. Additions over 15 wt% degraded formation of AlN whisker.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.1
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• pp.18-22
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• 2006

Epitaxial aluminum nitride films on 6H-SiC (0001) were fabricated using reactive RF magnetron sputtering and post-deposition rapid thermal annealing. The electrical properties of AIN films depending on film thickness and measurement temperature have been observed. Full width at half maximum of AIN (0002) was $0.1204^{\circ}$ (about 430 arcsec) X-ray rocking curve results. The equivalent oxide thickness (EOT) of AIN film was estimated as about 10 nm and the leakage current density was within the order of $10^{-8} 4/cm^2$. The dielectric constant of AIN film estimated from the accumulation region of C-V curve measured at $300^{\circ}C$ was 8.3. The dynamic dielectric constant was obtained as 5.1 from J vs. 1/T plots at the temperature ranging from R.T. to $300^{\circ}C$ From above, estimation temperature dependance of the electrical properties of Al/AIN/SiC MIS devices was affirmed and useful data compilation for the reliabilities of SiC MIS is expected.