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http://dx.doi.org/10.4191/KCERS.2008.45.1.069

Effects of SiO2 on the High Temperature Resistivities of AIN Ceramics  

Lee, Won-Jin (Komico Ltd.)
Kim, Hyung-Tae (Korea Institute of Ceramic Engineering and Technology(Icheon))
Lee, Sung-Min (Korea Institute of Ceramic Engineering and Technology(Icheon))
Publication Information
Journal of the Korean Ceramic Society / v.45, no.1, 2008 , pp. 69-74 More about this Journal
Abstract
The effects of $SiO_2$ impurity on the high temperature resistivities of AIN ceramics have been investigated. When $SiO_2$ was added into 1 wt% $Y_2O_3$-doped AIN, DC resistivities have decreased and electrode polarizations disappeared. Impedance spectroscopy showed two semi-circles at $600^{\circ}C$, which were attributed to grain and grain boundary, respectively. $SiO_2$ doping had more significant effects on the grain resistivity than grain boundary resistivity, implying that doped Si acted as a donor in AIN lattice. In addition, voltage dependency of DC resistivity was observed, which might be related to dependency of size of grain boundary semi-circle on the bias voltage in impedance spectroscopy.
Keywords
Aluminum nitride; Resistivity; $SiO_2$ impurity;
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Times Cited By KSCI : 4  (Citation Analysis)
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