• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.697-700
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• 2002

Porous anodic aluminum oxide(AAO) templates prepared by anodizing method were used for growing multiwalled carbon nanotubes(CNTs). AAO templates with the homogeneous pore diameter and length were obtained by two step anodizing technique. Using AAO templates, vertically well-ordered two-dimensional carbon nanotube arrays were fabricated. We investigated the field emission property of CNTs grown using different catalyst metals in vacuum chamber (<$10^{-7}$ Torr) on AAO Template. To explain the different emission property, the surface reaction between catalysts and alumina pores which inserted carbon species of $C_2H_2$ using High resolution transmission electron microscopy (HRTEM) was studied.

• Journal of the Korean institute of surface engineering
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• v.49 no.6
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• pp.549-554
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• 2016

Low melting metals are difficult to weld because it is vaporized. But epoxy resin make bonding possible using low melting material and dismissal materials. This study is to improve the bonding strength of epoxy and substrate by mechanical and electrochemical methods. In case of mechanical work, bonding strength is 17.6MPa and in case of pre-work, bonding strength is 15.3MPa. When anodizing and mechanical work is applied, bonding strength is 25.3Mpa is increased 165%. When anodizing is applied, bonding strength is 27.6Mpa.

• Journal of the Korean institute of surface engineering
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• v.32 no.3
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• pp.341-343
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• 1999

The morphology and composition of anodic films, formed on aluminium at various current densities, in the range $1-100{\;}Am^{-2}$, in the molten bisulphate melt at different temperatures (418-498K), have been studied using transmission electron microscopy of ultramicrotomed film sections, and ion beam thinned films. The first sign of incipient breakdown revealed by transmission electron microscopy of stripped films, is always the appearance of dark regions about 1,000 nm in diameter, representing local overgrowth of the film. The breakdown mechanism is closely related to thermal effects, because temperature rises at regions representing local overgrowth in the stripped films were observed at voltages close to the breakdown voltage, likely arising through impact ionization.

• Journal of the Semiconductor & Display Technology
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• v.20 no.1
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• pp.37-41
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• 2021

We report on the formation of anodic aluminum oxide (AAO) film using sulfuric acid containing cerium salt. When the temperature of the sulfuric acid containing cerium salt changes from 5 ℃ to 20 ℃, the current density and the thickness growth rate increase. The surface morphology of the AAO film change according to the temperature of the electrolytes. And that affected the breakdown voltage and the plasma etch rate. The breakdown voltage per unit thickness was the highest at 15 ℃, and the plasma etch rate was the lowest at 10 ℃ at 2.80 ㎛/h.

• Corrosion Science and Technology
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• v.21 no.6
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• pp.487-494
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• 2022

Anodizing is a typical electrochemical surface treatment method that can improve the corrosion and insulating properties of aluminum alloys. The anodization process can obtain a dense structure. It can be used to artificially grow the thickness of an anodization film. Aluminum 3003 alloy used in this study is the most commonly used alloy for batteries due to its high strength and excellent formability as well as its weldability and corrosion resistance. Aluminum 3003 alloy was anodized at 0 ℃ with 0.3 M oxalic acid at 20 V, 40 V, or 60 V for 1 hour, 6 hours, or 12 hours. As a result of analyzing the composition of each specimen with an Energy Dispersive Spectrometer (EDS), aluminum was converted into an oxide film. The thickness of the formed anodization film increased when the applied voltage and anodization time increased. High corrosion potential values and low corrosion current density values were observed for the thickest oxide layer. The anodization film formed by anodization acted as a protective layer. The electrical resistance increased as the applied voltage and anodization time increased.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.229-229
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• 2012

Adhesion of Copper film on the aluminum oxide layer formed by anodizing an aluminum plate was enhanced by applying ion beam mixing method. Forming an conductive metal layer on the insulating oxide surface without using adhesive epoxy bonds provide metal-PCB(Printed Circuit Board) better thermal conductivities, which are crucial for high power electric device working condition. IBM (Ion beam mixing) process consists of 3 steps; a preliminary deposition of an film, ion beam bombardment, and additional deposition of film with a proper thickness for the application. For the deposition of the films, e-beam evaporation method was used and 70 KeV N-ions were applied for the ion beam bombardment in this work. Adhesions of the interfaces measured by the adhesive tape test and the pull-off test showed an enhancement with the aid of IBM and the adhesion of the ion-beam-mixed films were commercially acceptable. The mixing feature of the atoms near the interface was studied by scanning electron microscopy, Auger electron spectroscopy, and X-ray photoelectron spectroscopy.

• Journal of the Korean institute of surface engineering
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• v.53 no.5
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• pp.249-256
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• 2020

As the size of manufacturing equipment for LCD and OLED displays increases, replacement of existing heavy stainless steel components with light metals, such as aluminum alloys, is being more important in semiconducting and display manufacturing industries. To use aluminum alloys for components in semiconducting and display industries, it is important to develop a new anodization method for improved performance of anodic oxide films than conventional anodization method based on sulfuric acid. In this work, optimum applied current density and the best sealing methods for anodic oxide films in 3% oxalic acid were explored. Experimental results showed 2.5 A/dm2 is the best applied current density for improved hardness and dielectric breakdown voltage. Sealing of the anodic oxide films further improved their hardness, dielectric breakdown voltage and resistance to HCl, by which application of anodic oxide films become applicable for components in semiconducting and display industries.

• Journal of the Microelectronics and Packaging Society
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• v.26 no.1
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• pp.35-39
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• 2019

To date, porous alumina structures have been implemented by electrochemical anodization technique. The anodizing methods can easy to make a porous aluminum oxide film with a regular arrangement, but oxide film with complex structure type such as pillar-on-pore is relatively difficult to implement. Therefore, this study aims to observe the change of anodized oxide pore size, thickness, and structure in a phosphoric acid solution according to applied anodization voltage conditions. For the implementation of hybrid composite oxide structures, it is possible to create by modulating anodization voltage. The experimental conditions were performed at the applied anodization voltage of 100 V and 120 V in 10% phosphoric acid solution, respectively. The experimental results were able to observe the structure of oxides in the form of porous and composite structures (pillar-on-pore), depending on each condition.

• Journal of Advanced Marine Engineering and Technology
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• v.28 no.2
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• pp.300-308
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• 2004

The formation mechanism of anodic oxide films on Mg alloys when anodized in NaOH solution. was investigated by focusing on the effects of anodizing potential. Al content. and anodizing time. Pure Mg and Mg-Al alloys were anodized for 10 min at various potentials in NaOH solutions. $Mg(OH)_2$ was generated by an active dissolution reaction at the surface. and the product was affected by temperature. The intensity ratio of $Mg(OH)_2$ in the XRD analysis decreased with increasing applied potential. while that of MgO increased. The anti-corrosion properties of anodized specimens at each constant potential were better than those of non-anodized specimens. The specimen anodized at an applied potential of 3 V had the best anti-corrosion property. And the intensity ratio of $Mg_{17}Al_{12}$/Mg increased with aluminum content in Mg-Al alloys. During anodizing. the active dissolution reaction occurred preferentially in ${\beta}\;phase(Mg_{17}Al_{12})$ until about 4 mins. and then the current density increased radually until 7 mins. The dissolution reaction progressed in a phase(Mg) which not formed the intermetallic compound. which had a lower Al content. In the anodic polarization test of $0.017\;mol{\cdot}dm^-3$ NaCl and $0.1\;mol{\cdot}dm^-3\;Na_2SO_4$ at 298 K. the current density of Mg-15 mass% Al alloy anodized for 10 mins increased. since the anodic film that forms on the a phase is a non-compacted film. The anodic film on the phase for 30 mins was a compact film as compared with that for 10 mins.

• Journal of the Korean Institute of Telematics and Electronics
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• v.18 no.3
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• pp.25-34
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• 1981

Aluminum anodization method has been investigated for fabricating charge coupled device(CCD) with two-level aluminum gate structure. Al2O3 films were formed to a thickness of 400-500A, by anodizing aluminum with 30-35V of anode voltage for 2 hours using 2 % ammonium tartrate solution as an electrolyte. Breakdown voltage of these films were about 30 volts. Using above mentioned Al2O3 film as an insulator between two aluminum electrodes, CCD transversal low pass filter has been fabricated. CCD transversal low pass filter with 17 tap coefficients has shown 22 dB stop-band attenuation. The operating clock frequency range of the fabricated device was from 3 KHz to 100 KHz.