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Plasma Corrosion and Breakdown Voltage Behavior of Ce Ion Added Sulfuric Acid Anodizing According to Electrolyte Temperature  

So, Jongho (Department of Electrical Engineering, Hanyang University)
Yun, Ju-Young (Vacuum Material Measurement Team, Korea Research Institute of Standards and Science)
Shin, Jae-Soo (Department of Advanced Materials Engineering, Daejeon University)
Publication Information
Journal of the Semiconductor & Display Technology / v.20, no.1, 2021 , pp. 37-41 More about this Journal
Abstract
We report on the formation of anodic aluminum oxide (AAO) film using sulfuric acid containing cerium salt. When the temperature of the sulfuric acid containing cerium salt changes from 5 ℃ to 20 ℃, the current density and the thickness growth rate increase. The surface morphology of the AAO film change according to the temperature of the electrolytes. And that affected the breakdown voltage and the plasma etch rate. The breakdown voltage per unit thickness was the highest at 15 ℃, and the plasma etch rate was the lowest at 10 ℃ at 2.80 ㎛/h.
Keywords
Anodizing; Plasma corrosion; Plasma etch rate; Breakdown voltage;
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