• JSTS:Journal of Semiconductor Technology and Science
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• v.7 no.4
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• pp.215-220
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• 2007

Leakage current of CMOS circuits has become a major factor in VLSI design these days. Although many circuit-level techniques have been developed, most of them require significant amount of designers' effort and are not aligned well with traditional VLSI design process. In this paper, we focus on technology mapping, which is one of the steps of logic synthesis when gates are selected from a particular library to implement a circuit. We take a radical approach to push the limit of technology mapping in its capability of suppressing leakage current: we use a probabilistic leakage (together with delay) as a cost function that drives the mapping; we consider pin reordering as one of options in the mapping; we increase the library size by employing gates with larger gate length; we employ a new flipflop that is specifically designed for low-leakage through selective increase of gate length. When all techniques are applied to several benchmark circuits, leakage saving of 46% on average is achieved with 45-nm predictive model, compared to the conventional technology mapping.

• Journal of the Korean Institute of Telematics and Electronics B
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• v.30B no.11
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• pp.1-10
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• 1993

This paper proposes a High Performance Full-Swing BiCMOS (HiF-BiCMOS) circuit which improves on the conventional BiCMOS circuit. The HiF-BiCMOS circuit has all the merits of the conventional BiCMOS circuit and can realize full-swing logic operation. Especially, the speed of full-swing logic operation is much faster than that of conventional full-swing BiCMOS circuit. And the number of transistors added in the HiF-BiCMOS for full-swing logic operation is constant regardless of the number of logic gate inputs. The HiF-BiCMOS circui has high stability to variation of environment factors such as temperature. Also, it has a preamorphized Si layer was changed into the perfect crystal Si after the RTA. Remarkable scalability for power supply voltage according to the development of VLSI technology. The power dissipation of HiF-BiCMOS is very small and hardly increases about a large fanout. Though the Spice simulation, the validity of the proposed circuit design is proved.

• 제어로봇시스템학회:학술대회논문집
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• 1988.10a
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• pp.414-417
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• 1988

Recently PLC pursues faster scanning time, circuit confidence, reliability improvement, and smaller size. To obtain above all merit, custom IC(Gate Array) is developed. Custom IC includes 5 main blocks and 2 auxiliary blocks. The 5 main blocks process faster sequential instruction execution by only logic gate using hexa instruction code system. And the 2 auxiliary blocks generate baud rate clock (153.6 KHz, 76.8KHz) to communicate between PLC and computer or programmers.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.2
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• pp.51-59
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• 2010

Two logic transformations, De Morgan and re-substitution, are sufficient to convert a unate gate network (UGN) to a more general balanced inversion parity (BIP) network. Circuit classes of interest are discussed in detail. We prove that De Morgan and re-substitution transformations are test-set preserving for path delay faults. Using the results of this paper, we can easily show that a high-level test set for a function z that detects all path delay faults in any UGN realizing z also detects all path delay faults in any BIP realization of z.

• Asia-pacific Journal of Multimedia Services Convergent with Art, Humanities, and Sociology
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• v.7 no.3
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• pp.301-310
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• 2017

Quantum-dot cellular automata(QCA) is an alternative technology for implementing various computation, high performance, and low power consumption digital circuits at nano scale. In this paper, we propose a new universal gate in QCA. By using the universal gate, we propose a novel XOR gate which is reduced time/hardware complexity. The universal gate can be used to construct all other basic logic gates. Meanwhile, the proposed universal gate is designed by basic cells and a rotated cell. The rotated cell of the proposed universal gate is located at the central of 3-input majority gate structure. In this paper, we propose an XOR gate using three universal gates, although more than five 3-input majority gates are used to design an XOR gate using the 3-input majority gate. The proposed XOR gate is superior to the conventional XOR gate in terms of the total area and the consumed clock because the number of gates are reduced.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.491-491
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• 2011

Transparent and flexible electronic devices that are light-weight, unbreakable, low power consumption, optically transparent, and mechanical flexible possibly have great potential in new applications of digital gadgets. Potential applications include transparent displays, heads-up display, sensor, and artificial skin. Recent reports on transparent and flexible field-effect transistors (tf-FETs) have focused on improving mechanical properties, optical transmittance, and performances. Most of tf-FET devices were fabricated with transparent oxide semiconductors which mechanical flexibility is limited. And, there have been no reports of transparent and flexible all-organic tf-FETs fabricated with organic semiconductor channel, gate dielectric, gate electrode, source/drain electrode, and encapsulation for sensor applications. We present the first demonstration of transparent, flexible all-organic sensor based on multifunctional organic FETs with organic semiconductor channel, gate dielectric, and electrodes having a capability of sensing infrared (IR) radiation and mechanical strain. The key component of our device design is to integrate the poly(vinylidene fluoride-triflouroethylene) (P(VDF-TrFE) co-polymer directly into transparent and flexible OFETs as a multi-functional dielectric layer, which has both piezoelectric and pyroelectric properties. The P(VDF-TrFE) co-polumer gate dielectric has a high sensitivity to the wavelength regime over 800 nm. In particular, wavelength variations of P(VDF-TrFE) molecules coincide with wavelength range of IR radiation from human body (7000 nm ~14000 nm) so that the devices are highly sensitive with IR radiation of human body. Devices were examined by measuring IR light response at different powers. After that, we continued to measure IR response under various bending radius. AC (alternating current) gate biasing method was used to separate the response of direct pyroelectric gate dielectric and other electrical parameters such as mobility, capacitance, and contact resistance. Experiment results demonstrate that the tf-OTFT with high sensitivity to IR radiation can be applied for IR sensors.

• Journal of Korea Society of Industrial Information Systems
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• v.12 no.2
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• pp.37-48
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• 2007

In order to become a mega hub port, major ports all over the world are making every effort to enhance their productivity through efficiency of internal operation and introduction of the state-of-the-art technologies. They are not only installing various kinds of high-technology equipments but also introducing advanced technologies for the development of an effective gate system. Recently thanks to the appearance of RFID (radio frequency identification) and OCR (optical character recognition) technology, major container terminals are stewing up the automation of truck and container identification at the container luminal gate. This study aim to develop an automated gate system for identification task based on RFID and OCR technology. It will make mn effective gate operations in a container terminal.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.11a
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• pp.113-116
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• 1996

The drain current of the MOSFET in the off state(i.e., Id when Vgs=0V) is undesired but nevertheless important leakage current device parameter in many digital CMOS IC applications (including DRAMs, SRAMs, dynamic logic circuits, and portable systems). The standby power consumed by devices in the off state have added to the total power consumed by the IC, increasing heat dissipation problems in the chip. In this paper, hot-carrier-induced degra- dation and gate-induced-drain-leakage curr- ent under worse case in P-MOSFET\`s have been studied. First of all, the degradation of gate-induced- drain-leakage current due to electron/hole trapping and surface electric field in off state MOSFET\`s which has appeared as an additional constraint in scaling down p-MOSFET\`s. The GIDL current in p-MOSFET\`s was decreased by hot-electron stressing, because the trapped charge were decreased surface-electric-field. But the GIDL current in n-MOS77T\`s under worse case was increased.

• Proceedings of the IEEK Conference
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• 2000.07a
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• pp.318-321
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• 2000

This paper propose the method of constructing the highly efficiency adder and multiplier systems over finite fie2, degree of uk terms, therefore we decrease k into m-1 degree using irreducible primitive polynomial. We propose two method of control signal generation for perform above decrease process. One method is the combinational logic expression and the other method is universal signal generation. The proposed method of constructing the highly adder/multiplier systems is as following. First of all, we obtain algorithms for addition and multiplication arithmetic operation based on the mathematical properties over finite fields, next we construct basic cell of A-cell and M-cell using T-gate and modP cyclic gate. Finally we construct adder module and multiplier module over finite fields after synthesize ${\alpha}$$\^$k/ generation module and control signal CSt generation module with A-cell and M-cell. Then, we propose the future research and prospects.

• International Journal of Fuzzy Logic and Intelligent Systems
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• v.5 no.3
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• pp.206-215
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• 2005

In this paper, we propose a new design method of Genetic Algorithm Processor(GAP) and Evolvable Hardware(EHW). All sorts of creature evolve its structure or shape in order to adapt itself to environments. Evolutionary Computation based on the process of natural selection not only searches the quasi-optimal solution through the evolution process, but also changes the structure to get best results. On the other hand, Genetic Algorithm(GA) is good fur finding solutions of complex optimization problems. However, it has a major drawback, which is its slow execution speed when is implemented in software of a conventional computer. Parallel processing has been one approach to overcome the speed problem of GA. In a point of view of GA, long bit string length caused the system of GA to spend much time that clear up the problem. Evolvable Hardware refers to the automation of electronic circuit design through artificial evolution, and is currently increased with the interested topic in a research domain and an engineering methodology. The studies of EHW generally use the XC6200 of Xilinx. The structure of XC6200 can configure with gate unit. Each unit has connected up, down, right and left cell. But the products can't use because had sterilized. So this paper uses Vertex-E (XCV2000E). The cell of FPGA is made up of Configuration Logic Block (CLB) and can't reconfigure with gate unit. This paper uses Vertex-E is composed of the component as cell of XC6200 cell in VertexE