• JSTS:Journal of Semiconductor Technology and Science
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• 제7권4호
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• pp.215-220
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• 2007

Leakage current of CMOS circuits has become a major factor in VLSI design these days. Although many circuit-level techniques have been developed, most of them require significant amount of designers' effort and are not aligned well with traditional VLSI design process. In this paper, we focus on technology mapping, which is one of the steps of logic synthesis when gates are selected from a particular library to implement a circuit. We take a radical approach to push the limit of technology mapping in its capability of suppressing leakage current: we use a probabilistic leakage (together with delay) as a cost function that drives the mapping; we consider pin reordering as one of options in the mapping; we increase the library size by employing gates with larger gate length; we employ a new flipflop that is specifically designed for low-leakage through selective increase of gate length. When all techniques are applied to several benchmark circuits, leakage saving of 46% on average is achieved with 45-nm predictive model, compared to the conventional technology mapping.

• 전자공학회논문지B
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• 제30B권11호
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• pp.1-10
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• 1993

This paper proposes a High Performance Full-Swing BiCMOS (HiF-BiCMOS) circuit which improves on the conventional BiCMOS circuit. The HiF-BiCMOS circuit has all the merits of the conventional BiCMOS circuit and can realize full-swing logic operation. Especially, the speed of full-swing logic operation is much faster than that of conventional full-swing BiCMOS circuit. And the number of transistors added in the HiF-BiCMOS for full-swing logic operation is constant regardless of the number of logic gate inputs. The HiF-BiCMOS circui has high stability to variation of environment factors such as temperature. Also, it has a preamorphized Si layer was changed into the perfect crystal Si after the RTA. Remarkable scalability for power supply voltage according to the development of VLSI technology. The power dissipation of HiF-BiCMOS is very small and hardly increases about a large fanout. Though the Spice simulation, the validity of the proposed circuit design is proved.

• 제어로봇시스템학회:학술대회논문집
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• 제어로봇시스템학회 1988년도 한국자동제어학술회의논문집(국내학술편); 한국전력공사연수원, 서울; 21-22 Oct. 1988
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• pp.414-417
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• 1988

Recently PLC pursues faster scanning time, circuit confidence, reliability improvement, and smaller size. To obtain above all merit, custom IC(Gate Array) is developed. Custom IC includes 5 main blocks and 2 auxiliary blocks. The 5 main blocks process faster sequential instruction execution by only logic gate using hexa instruction code system. And the 2 auxiliary blocks generate baud rate clock (153.6 KHz, 76.8KHz) to communicate between PLC and computer or programmers.

• 대한전자공학회논문지SD
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• 제47권2호
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• pp.51-59
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• 2010

드모르간 및 재대입 논리변환은 unate gate network (UGN)을 보다 일반적인 balanced inversion parity (BIP) network으로 전환하는데 충분하다. 이러한 회로계층에 대해서도 자세히 논의하고 있다. 우리는 드모르간 및 재대입 논리변환이 경로지연고장 테스트집합을 유지한다는 것을 증명하였다. 본 논문의 결과를 이용하여 함수 z를 구현하는 모든 UGN에서 모든 경로지연고장을 검출하는 상위수준 테스트집합은 함수 z의 어떠한 BIP realization에서도 모든 경로지연고장을 검출한다는 것을 보일 수 있다.

• 예술인문사회 융합 멀티미디어 논문지
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• 제7권3호
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• pp.301-310
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• 2017

양자점 셀룰라 오토마타(QCA: quantum-dot cellular automata)는 나노 크기의 셀을 이용하여 다양한 연산을 수행하며, 매우 빠른 연산속도와 적은 전력손실로 차세대 기술로 떠오르고 있다. 본 논문에서는 QCA 상에서 새로운 유니버셜 게이트(universal gate)를 제안한다. 또한, 유니버셜 게이트를 이용하여 시공간 효율성 측면에서 우수한 XOR 게이트를 제안한다. 유니버셜 게이트는 자기 자신으로 모든 기본 논리 게이트를 만들어 낼 수 있는 게이트이다. 한편, 제안된 유니버셜 게이트는 기본 셀과 회전된 셀을 활용하여 설계한다. 제안된 유니버셜 게이트의 회전된 셀은 3-입력 다수결게이트 구조의 중앙부에 위치한다. 3-입력 다수결 게이트를 이용하여 XOR 게이트를 설계할 때는 5개 이상의 3-입력 다수결 게이트가 사용되지만, 본 논문에서는 3개의 유니버셜 게이트를 사용하여 XOR 게이트를 제안한다. 제안하는 XOR 게이트는 기존의 XOR 게이트보다 사용된 게이트 수가 줄었으며 설계 면적이나 소요 클럭면에서 우수함을 확인할 수 있다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.491-491
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• 2011

Transparent and flexible electronic devices that are light-weight, unbreakable, low power consumption, optically transparent, and mechanical flexible possibly have great potential in new applications of digital gadgets. Potential applications include transparent displays, heads-up display, sensor, and artificial skin. Recent reports on transparent and flexible field-effect transistors (tf-FETs) have focused on improving mechanical properties, optical transmittance, and performances. Most of tf-FET devices were fabricated with transparent oxide semiconductors which mechanical flexibility is limited. And, there have been no reports of transparent and flexible all-organic tf-FETs fabricated with organic semiconductor channel, gate dielectric, gate electrode, source/drain electrode, and encapsulation for sensor applications. We present the first demonstration of transparent, flexible all-organic sensor based on multifunctional organic FETs with organic semiconductor channel, gate dielectric, and electrodes having a capability of sensing infrared (IR) radiation and mechanical strain. The key component of our device design is to integrate the poly(vinylidene fluoride-triflouroethylene) (P(VDF-TrFE) co-polymer directly into transparent and flexible OFETs as a multi-functional dielectric layer, which has both piezoelectric and pyroelectric properties. The P(VDF-TrFE) co-polumer gate dielectric has a high sensitivity to the wavelength regime over 800 nm. In particular, wavelength variations of P(VDF-TrFE) molecules coincide with wavelength range of IR radiation from human body (7000 nm ~14000 nm) so that the devices are highly sensitive with IR radiation of human body. Devices were examined by measuring IR light response at different powers. After that, we continued to measure IR response under various bending radius. AC (alternating current) gate biasing method was used to separate the response of direct pyroelectric gate dielectric and other electrical parameters such as mobility, capacitance, and contact resistance. Experiment results demonstrate that the tf-OTFT with high sensitivity to IR radiation can be applied for IR sensors.

• 한국산업정보학회논문지
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• 제12권2호
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• pp.37-48
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• 2007

각국의 항만들은 중심항만으로 자리매김하기 위해 첨단기술을 항만건설, 하역장비, 운영시스템 등에 적용함으로써 항만 효율성 및 생산성 향상에 박차를 가하고 있다. 최근에는 RFID(radio frequency identification)와 OCR(optical character recognition) 기술의 등장으로 자동화 게이트시스템에 대한 관심이 높아지고 있다. 국내에는 RFID 기술과 OCR 기술을 적용하여 컨테이너 터미널 게이트의 효율성 및 생산성을 향상시키고자 하는 연구과제들이 수행되고 있으나, 100%에 미치지 못하는 인식률 때문에 현실에 적용하기에 부족한 부분이 있다. 이에 본 연구에서는 RFID와 OCR기술을 동시에 적용해 이들이 가진 장점을 활용한 RFID/OCR 기반의 자동화 게이트시스템을 개발하고, 이를 컨테이너 터미널 게이트에 적영하여 컨테이너 터미널 게이트의 인식업무를 개선시킬 수 있는 효율적인 게이트 운영 시스템을 제시하고자 한다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1996년도 추계학술대회 논문집
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• pp.113-116
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• 1996

The drain current of the MOSFET in the off state(i.e., Id when Vgs=0V) is undesired but nevertheless important leakage current device parameter in many digital CMOS IC applications (including DRAMs, SRAMs, dynamic logic circuits, and portable systems). The standby power consumed by devices in the off state have added to the total power consumed by the IC, increasing heat dissipation problems in the chip. In this paper, hot-carrier-induced degra- dation and gate-induced-drain-leakage curr- ent under worse case in P-MOSFET\`s have been studied. First of all, the degradation of gate-induced- drain-leakage current due to electron/hole trapping and surface electric field in off state MOSFET\`s which has appeared as an additional constraint in scaling down p-MOSFET\`s. The GIDL current in p-MOSFET\`s was decreased by hot-electron stressing, because the trapped charge were decreased surface-electric-field. But the GIDL current in n-MOS77T\`s under worse case was increased.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2000년도 ITC-CSCC -1
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• pp.318-321
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• 2000

This paper propose the method of constructing the highly efficiency adder and multiplier systems over finite fie2, degree of uk terms, therefore we decrease k into m-1 degree using irreducible primitive polynomial. We propose two method of control signal generation for perform above decrease process. One method is the combinational logic expression and the other method is universal signal generation. The proposed method of constructing the highly adder/multiplier systems is as following. First of all, we obtain algorithms for addition and multiplication arithmetic operation based on the mathematical properties over finite fields, next we construct basic cell of A-cell and M-cell using T-gate and modP cyclic gate. Finally we construct adder module and multiplier module over finite fields after synthesize ${\alpha}$$\^$k/ generation module and control signal CSt generation module with A-cell and M-cell. Then, we propose the future research and prospects.

• International Journal of Fuzzy Logic and Intelligent Systems
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• 제5권3호
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• pp.206-215
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• 2005

In this paper, we propose a new design method of Genetic Algorithm Processor(GAP) and Evolvable Hardware(EHW). All sorts of creature evolve its structure or shape in order to adapt itself to environments. Evolutionary Computation based on the process of natural selection not only searches the quasi-optimal solution through the evolution process, but also changes the structure to get best results. On the other hand, Genetic Algorithm(GA) is good fur finding solutions of complex optimization problems. However, it has a major drawback, which is its slow execution speed when is implemented in software of a conventional computer. Parallel processing has been one approach to overcome the speed problem of GA. In a point of view of GA, long bit string length caused the system of GA to spend much time that clear up the problem. Evolvable Hardware refers to the automation of electronic circuit design through artificial evolution, and is currently increased with the interested topic in a research domain and an engineering methodology. The studies of EHW generally use the XC6200 of Xilinx. The structure of XC6200 can configure with gate unit. Each unit has connected up, down, right and left cell. But the products can't use because had sterilized. So this paper uses Vertex-E (XCV2000E). The cell of FPGA is made up of Configuration Logic Block (CLB) and can't reconfigure with gate unit. This paper uses Vertex-E is composed of the component as cell of XC6200 cell in VertexE