• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제52권7호
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• pp.288-292
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• 2003

AlM thin film has been deposited on A1$_2$O$_3$ substrate by reactive radio frequency(RF) magnetron sputtering method under various operating conditions such as working pressure, fraction of nitrogen partial pressure, and substrate temperature. Scanning Electron Microscope(SEM), X-ray Diffraction(XRD), and Atomic Force Microscope(AFM) have been measured to find out structural properties and preferred orientation of AlN thin films. SAW velocity of IDTs/AlN/Si structure was about 5038［㎧］ at the center frequency of 251.9［MHz］ and insertion loss was measured to be relatively low value of 35.6［dB］. SAW velocity of IDTs/AlN/A1$_2$O$_3$ structure was improved to be about 5960［㎧］ at the center frequency of 296.7［MHz］.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2013년도 춘계학술대회 논문집
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• pp.112-113
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• 2013

Thin CrAlMgSiN films, whose composition were 30.6Cr-11.1Al-7.3Mg-1.2Si-49.8N (at.%), were deposited on steel substrates in a cathodic arc plasma deposition system. They consisted of alternating crystalline Cr-N and AlMgSiN nanolayers. After oxidation at $800^{\circ}C$ for 200 h in air, a thin oxide layer formed by outward diffusion of Cr, Mg, Al, Fe, and N, and inward diffusion of O ions. Silicon ions were relatively immobile at $800^{\circ}C$. After oxidation at $900^{\circ}C$ for 10 h in air, a thin $Cr_2O_3$ layer containing dissolved ions of Al, Mg, Si, and Fe formed. Silicon ions became mobile at $900^{\circ}C$. After oxidation at $900^{\circ}C$ for 50 h in air, a thin $SiO_2-rich$ layer formed underneath the thin $Cr_2O_3$ layer. The film displayed good oxidation resistance. The main factor that decreased the oxidation resistance of the film was the outward diffusion and subsequent oxidation of Fe at the sample surface, particularly along the coated sample edge.

• 한국전기전자재료학회논문지
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• 제28권2호
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• pp.104-108
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• 2015

Al thin films were deposited on TiN/Si(100) via metal-organic chemical vapor deposition using N-methylpyrrolidine alane as a precursor. Characterization of the deposited films were investigated with SEM, XRD, ${\alpha}$-step, AFM, 4-point probe. The early stage of Al thin film deposition was analyzed by in-situ surface reflectance measurement with laser and photometer apparatus. The surface reflectance were changed greatly during the initial 30~40 seconds. There were two increases and two decreases in the surface reflectance, thus the sequence of Al films were deposited at 8 significant points of the surface reflectance change. Surface topograph and cross-sectional view of each film were analyzed with SEM. Al films were grown in the complex mechanism of Volmer-Weber and Stranski-Krastanov process.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.252-252
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• 2009

In this work, the nanocrystalline ZnO/polycrystalline (poly) aluminum nitride (AlN)/Si structure was fabricated for humidity sensor applications based on surface acoustic wave (SAW). In this structure, the ZnO film was used as sensing material layer. These ZnO and AlN(0002) were deposited by so-gel process and a pulse reactive magnetron sputtering, respectively. These experimental results showed that the obtained SAW velocity on AlN film was about 5128 m/s at $h/\lambda$=0.0125 (h and $\lambda$ is thickness and wavelength, respectively). For ZnO sensing layers coated on AlN, films have hexagonal wurtzite structure and nanometer particle size. The crystalline size of ZnO films annealed at 400, 500, and 600 $^{\circ}C$ is 10.2, 29.1, and 38 nm, respectively. Surface of the film exhibits spongy which can adsorb steam in the air. The best quality of the ZnO film was obtained with annealing temperature at 500 $^{\circ}Cis$. The change in frequency response (127.9~127.85 MHz) of the SAW humidity sensor based on ZnO/AlN structure was measured along the change in humidity (41~69%). The structural properties of thin films wereinvestigated by XRD and SEM.

• 대한금속재료학회지
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• 제50권1호
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• pp.78-85
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• 2012

Aluminum nitride(AlN) is a compound (III-V group) of hexagonal system with a crystal structure. Its Wurzite phase is a very wide band gap semiconductor material. It has not only a high thermal conductivity, a high electrical resistance, a high electrical insulating constant, a high breakdown voltage and an excellent mechanical strength but also stable thermal and chemical characteristics. This study is on the preferred orientation characteristics of AlN thin films by reactive evaporation using $NH_3$. We have manufactured an AlN thin film and then have checked the crystal structure and the preferred orientation by using an X-ray diffractometer and have also observed the microstructure with TEM and AlN chemical structure with FT-IR. We can manufacture an excellent AlN thin film by reactive evaporation using $NH_3$ under 873 K of substrate temperature. The AlN thin film growth is dependent on Al supplying and $NH_3$ has been found to be effective as a source of $N_2$. However, the nuclear structure of AlN did not occur randomly around the substrate a particle of the a-axis orientation in fast growth speed becomes an earlier crystal structure and is shown to have an a-axis preferred orientation. Therefore, reactive evaporation using $NH_3$ is not affected by provided $H_2$ amount and this can be an easy a-axis orientation method.

• 한국결정성장학회지
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• 제24권3호
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• pp.106-110
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• 2014

Atomic layer deposition(ALD)을 이용하여 $Al_2O_3$ 박막을 형성하고 이에 대한 패시베이션 특성에 대한 연구를 수행하였다. ALD로 증착된 $Al_2O_3$ 박막은 $400^{\circ}C$ 5분간 후속 열처리 공정 후에도 $Al_2O_3$ - 실리콘 계면 반응 없이 비정질 상태를 유지할 만큼 구조적으로 안정한 특성을 나타내었다. 후속 열처리 후 $Al_2O_3$ 박막의 패시베이션 특성이 향상되었으며, 이는 field effective 패시베이션과 화학적 패시베이션 효과가 동시에 상승에 기인하는 것으로 판단된다. $Al_2O_3$ 박막의 음고정 전하를 정량적으로 평가하기 위해서 후속 열처리 공정을 거친 $Al_2O_3$ 박막을 이용하여 metal-oxide-semiconductor(MOS) 소자를 제작하고 capacitance-voltage(C-V) 분석을 수행하였다. C-V 결과로부터 추출된 flatband voltage($V_{FB}$)와 equivalent oxide thickness(EOT)의 관계식을 통하여 $Al_2O_3$ 박막의 고정음전하는 $2.5{\times}10^{12}cm^{-2}$로 계산되었으며, 이는 본 연구에서 제시된 $Al_2O_3$ 박막 공정이 N-type 실리콘 태양전지의 패시베이션 공정에 응용 가능하다는 것을 의미한다.

• 한국산업융합학회 논문집
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• 제26권5호
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• pp.743-750
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• 2023

Aluminum alloy is a material widely used in the aircraft industry. However, since it has relatively low hardness, strength and tribological properties, it is necessary to improve these properties. In this paper, a TiN thin film was coated on the surface of AL7075-T7351 using DC magnetron sputtering. The coating was performed by setting different deposition pressure, deposition time, and applied power. Then, the tribological properties of the thin film were investigated. As a result of the experiment, the hardness of the thin film was higher than that of the base material, and the specimen with the highest hardness had excellent friction coefficient, wear amount, and adhesive strength characteristics. Through this study, it was confirmed that the tribological characteristics of aluminum alloy can be improved by depositing thin films using DC magnetron sputtering.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 춘계학술대회 논문집
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• pp.13-16
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• 2009

In this study, AlN thin films were deposited on a polycrystalline (poly) 3C-SiC buffer layer for surface acoustic wave (SAW) applications using a pulsed reactive magnetron sputtering system. AFM, XRD and FT-IR were used to analyze structural properties and preferred orientation of the AlN/3C-SiC thin film. Suitability of the film in SAW applications was investigated by comparing the SAW characteristics of an interdigital transducer (IDT)/AlN/3C-SiC structure with the IDT/AIN/Si structure at 160 MHz in the temperature range $30-150^{\circ}C$. These experimental results showed that AlN films on the poly 3C-SiC layer were highly (002) oriented. Furthermore, the film showed improved temperature stability for the SAW device, $TCF\;=\;-18\;ppm//^{\circ}C$. The change in resonance frequency according to temperature was nearly linear. The insertion loss decrease was about $0.033dB/^{\circ}C$. However, some defects existed in the film, which caused a slight reduction in SAW velocity.

• E2M - 전기 전자와 첨단 소재
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• 제10권7호
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• pp.706-712
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• 1997

AlN(Aluminium Nitride) thin films were prepared using by RF sputtering method on the Si(100) and Si(111) substrates as the parameters of the substrate temperature, RF power, sputtering duration and the $N_2$/Ar ratio and investigated by X-ray diffraction, IR spectrometry, n&k analyzer. For the Si(100) substrate, the AlN thin films of (101) orientation were obtained under the conditions of room temperature and the nitrogen of 60 vol.%. For the Si(111) substrate, the (002) AlN thin films were obtained under the nitrogen of 100 vol.%. In case of the thin film prepared in the condition of above 60 vol.% of the nitrogen, the average value of the surface roughness of the film was 151$\AA$. From the changes of the half widths of E$_1$[TO] phonon bands at the wavenumber of 680$cm^{-1}$ /, it were compared of the crystallinities of the films which were grown under the different conditions. The thicknesses of AlN films were decreased dramatically in the region of the nitrogen of 40~60 vol.%. Its due to the nitridation of the Al target surface and getting low of the sputtering yield by the $N_2$/Ar ratio being increased.

• 한국전기전자재료학회논문지
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• 제27권12호
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• pp.815-819
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• 2014

Aluminum nitride (AlN) thin film and TiN film as a buffer layer were deposited on INCONEL 600 substrate by reactive RF magnetron sputtering at room temperature(R.T.) under 25~75% $N_2/Ar$ atmosphere. The as-deposited AlN films at 25~50% $N_2/Ar$ showed a polycrystalline phase of hexagonal AlN, and an amorphous phase. The peak of AlN (002) plane, which was determinant on a performance of piezoelectric transducer, became strong with increasing the $N_2/Ar$ ratio. Any change in the preferential orientation of the as-deposited AlN films was not observed within our $N_2$ concentration range. The piezoelectric sensing properties of AlN module were performed using pressure-voltage measurement system. The output signal voltage of AlN module showed a linear behavior between 20~80 mV in 1~10 MPa range, and the pressure-sensing sensitivity was calculated as 3.6 mV/MPa.