Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Analysis of Growth Mechanism of Al Thin Film by in-situ Surface Reflectance Measurement During MOCVD Process

MOCVD에 의한 Al 박막 증착 중의 표면 반사도 측정을 통한 박막 성장 메커니즘 분석

  • Kim, Kisoo (Department of Applied Chemistry, Cheongju University) ;
  • Seo, Moon Kyu (Department of Applied Chemistry, Cheongju University)
  • Received : 2014.12.22
  • Accepted : 2015.01.20
  • Published : 2015.02.01
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Abstract

Al thin films were deposited on TiN/Si(100) via metal-organic chemical vapor deposition using N-methylpyrrolidine alane as a precursor. Characterization of the deposited films were investigated with SEM, XRD, ${\alpha}$-step, AFM, 4-point probe. The early stage of Al thin film deposition was analyzed by in-situ surface reflectance measurement with laser and photometer apparatus. The surface reflectance were changed greatly during the initial 30~40 seconds. There were two increases and two decreases in the surface reflectance, thus the sequence of Al films were deposited at 8 significant points of the surface reflectance change. Surface topograph and cross-sectional view of each film were analyzed with SEM. Al films were grown in the complex mechanism of Volmer-Weber and Stranski-Krastanov process.

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References

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