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http://dx.doi.org/10.4313/JKEM.2014.27.12.815

Fabrication of AlN Thin Film by Reactive RF Magnetron Sputtering and Sensing Characteristics of Oil Pressure  

Seok, Hye-Won (Electronic Materials & Module Team, Korea Institute of Ceramics Engineering and Technology)
Kim, Sei-Ki (Electronic Materials & Module Team, Korea Institute of Ceramics Engineering and Technology)
Kang, Yang-Koo (Electronic Materials & Module Team, Korea Institute of Ceramics Engineering and Technology)
Hong, Yeon-Woo (Electronic Materials & Module Team, Korea Institute of Ceramics Engineering and Technology)
Lee, Young-Jin (Electronic Materials & Module Team, Korea Institute of Ceramics Engineering and Technology)
Ju, Byeong-Kwon (Display and Nanosystem Lab, Korea University)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.27, no.12, 2014 , pp. 815-819 More about this Journal
Abstract
Aluminum nitride (AlN) thin film and TiN film as a buffer layer were deposited on INCONEL 600 substrate by reactive RF magnetron sputtering at room temperature(R.T.) under 25~75% $N_2/Ar$ atmosphere. The as-deposited AlN films at 25~50% $N_2/Ar$ showed a polycrystalline phase of hexagonal AlN, and an amorphous phase. The peak of AlN (002) plane, which was determinant on a performance of piezoelectric transducer, became strong with increasing the $N_2/Ar$ ratio. Any change in the preferential orientation of the as-deposited AlN films was not observed within our $N_2$ concentration range. The piezoelectric sensing properties of AlN module were performed using pressure-voltage measurement system. The output signal voltage of AlN module showed a linear behavior between 20~80 mV in 1~10 MPa range, and the pressure-sensing sensitivity was calculated as 3.6 mV/MPa.
Keywords
AlN thin film; RF reactive sputtering; Piezoelectric transducer; Oil pressure;
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