• Applied Chemistry for Engineering
• /
• v.23 no.5
• /
• pp.501-504
• /
• 2012

In this study, etched Al electrodes with ordered arrays of pits and high aspect ratios were successively obtained using a patterned protect layer on the Al surface prepared with soft lithography method. Various methods were applied to fabricate a well ordered protect layer on the Al surface and the difference of etched Al surfaces with and without a protect layer was investigated by using SEM. It was found that the etched Al surfaces were affected by using either a protect layer or a non protect layer. As a result, the Al surface with the well ordered pits could be achieved by protect layer. However, the etched Al with nonuniform pits can be obtained without any protect layers.

• Journal of the Korean institute of surface engineering
• /
• v.54 no.5
• /
• pp.230-237
• /
• 2021

In this study, the influence of silicon contents on the microstructure, mechanical and tribological properties of Ti-Al-Si-N coatings were systematically investigated for application of cutting tools. The composition of the Ti-Al-Si-N coatings were controlled by different combinations of TiAl₂ and Ti₄Si composite target powers using an arc ion plating technique in a reactive gas mixture of high purity Ar and N₂ during depositions. Ti-Al-Si-N films were nanocomposite consisting of nanosized (Ti,Al,Si)N crystallites embedded in an amorphous Si₃N₄/SiO₂ matrix. The instrumental analyses revealed that the synthesized Ti-Al-Si-N film with Si content of 5.63 at.% was a nanocomposites consisting of nano-sized crystallites (5-7 nm in dia.) and a three dimensional thin layer of amorphous Si₃N₄ phase. The hardness of the Ti-Al-Si-N coatings also exhibited the maximum hardness value of about 47 GPa at a silicon content of ~5.63 at.% due to the microstructural change to a nanocomposite as well as the solid-solution hardening. The coating has a low friction coefficient of 0.55 at room temperature against an Inconel alloy ball. These excellent mechanical and tribological properties of the Ti-Al-Si-N coatings could help to improve the performance of machining and cutting tool applications.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.27 no.12
• /
• pp.815-819
• /
• 2014

Aluminum nitride (AlN) thin film and TiN film as a buffer layer were deposited on INCONEL 600 substrate by reactive RF magnetron sputtering at room temperature(R.T.) under 25~75% $N_2/Ar$ atmosphere. The as-deposited AlN films at 25~50% $N_2/Ar$ showed a polycrystalline phase of hexagonal AlN, and an amorphous phase. The peak of AlN (002) plane, which was determinant on a performance of piezoelectric transducer, became strong with increasing the $N_2/Ar$ ratio. Any change in the preferential orientation of the as-deposited AlN films was not observed within our $N_2$ concentration range. The piezoelectric sensing properties of AlN module were performed using pressure-voltage measurement system. The output signal voltage of AlN module showed a linear behavior between 20~80 mV in 1~10 MPa range, and the pressure-sensing sensitivity was calculated as 3.6 mV/MPa.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.22 no.4
• /
• pp.350-354
• /
• 2009

$Al_{2}O_{3}$ thin films were deposited on GaN(0001) by using a Remote Plasma Atomic Layer Deposition(RPALD) technique with a trimethylaluminum(TMA) precursor and oxygen radicals in the temperature range of $25{\sim}500^{\circ}C$. The growth rate per cycle was varied with the substrate temperature from $1.8{\AA}$/cycle at $25^{\circ}C$ to $0.8{\AA}$/cycle at $500^{\circ}C$. The chemical structure of the $Al_{2}O_{3}$ thin films was studied using X-ray photoelectron spectroscopy(XPS). The electrical properties of $Al_{2}O_{3}$/GaN Metal-Insulator-Semiconductor (MIS) capacitor grown at a $300^{\circ}C$ process temperature were excellent, a low electrical leakage current density(${\sim}10^{-10}A/cm^2$ at 1 MV) at room temperature and a high dielectric constant of about 7.2 with a thinner oxide thickness of 12 nm. The interface trap density($D_{it}$) was estimated using a high-frequency C-V method measured at $300^{\circ}C$. These results show that the RPALD technique is an excellent choice for depositing high-quality $Al_{2}O_{3}$ as a Sate dielectric in GaN-based devices.

• Korean Journal of Materials Research
• /
• v.27 no.11
• /
• pp.603-608
• /
• 2017

$Si_3N_4$ is a ceramic material attracting attention in many fields because of its excellent abrasion resistance. In addition, Ti and TiAl alloys are metals used in a variety of high temperature environments, and have attracted much attention because of their high strength and high melting points. Therefore, study of the interface reaction between $Si_3N_4/Ti$ and $Si_3N_4/TiAl$ can be a useful practice to identify phase selection and diffusion control. In this study, $Si_3N_4/Ti_5Si_3+TiN/TiN/Ti$ diffusing pairs were formed in the $Si_3N_4/Ti$ interfacial reaction and $Si_3N_4/TiN(Al)/Ti_3Al/TiAl$ diffusion pathway was identified in the $Si_3N_4/TiAl$ interfacial reaction. The diffusion layers of the interface reactions were identified and, to investigate the kinetics of the diffusion layer, the integrated diffusion coefficients were estimated.

• Korean Journal of Materials Research
• /
• v.12 no.8
• /
• pp.669-675
• /
• 2002

CrN film coated by AIP method, improved the mechanical properties (Hardness, Roughness, wear and fatigue) of Ti-6Al-4V alloy. The properties were studied using GXRD, XPS, Hardness, Roughness, wear and fatigue testers. CrN thin film thickness was about 7.5$\mu\textrm{m}$ and grew with (111) orientation. Hardness of CrN thin film was very high (Hv 1390) and roughness of the surface layer was greatly improved (Ra=0.063$\mu\textrm{m}$) compared with matrix alloy (Ra=0.321$\mu\textrm{m}$). Such changes of hardness and roughness could be contributed to improving the wear resistance and fatigue life. Striation like pattern with dimples and voids, a typical fatigue fracture mode, was observed throughout the specimen.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.33 no.6
• /
• pp.433-438
• /
• 2020

To enhance the tunneling electroresistance (TER) ratio of a ferroelectric tunnel junction (FTJ) device using Al-doped HfO₂ thin films, a thin insulating layer was prepared on a TiN bottom electrode, for which TiN was preliminarily treated at various temperatures in O₂ ambient. The composition and thickness of the inserted insulating layer were optimized at 600℃ and 50 Torr, and the FTJ showed a high TER ratio of 430. During the heat treatments, a titanium oxide layer formed on the surface of TiN, that suppressed oxygen vacancy generation in the ferroelectric thin film. It was found that the fabricated FTJ device exhibits two distinct resistance states with higher tunneling currents by properly heat-treating the TiN bottom electrode of the HfO₂-based FTJ devices in O₂ ambient.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2005.07b
• /
• pp.1343-1346
• /
• 2005

Self assembled monolayers (SAM) are generally used at the anode/organic interface to enhance the carrier injection in organic light emitting devices, which improves the electroluminescence performance of organic devices. This paper reports the use of SAM of 1-decanethiol (H-S(CH2)9CH3) at the cathode/organic interface to enhance the electron injection process for organic light emitting devices. Aluminum (Al), tris-(8-hydroxyquionoline) aluminum (Alq3), N,N'-diphenyl-N,N'-bis(3 -methylphenyl)-1,1'- diphenyl-4,4'-diamine (TPD) and indium-tin-oxide (ITO) were used as bottom cathode, an emitting layer (EML), a hole-transporting layer (HTL) and a top anode, respectively. The results of the capacitancevoltage (C-V), current density -voltage (J-V) and brightness-voltage (B-V), luminance and quantum efficiency measurements show a considerable improvement of the device performance. The dipole moment associated with the SAM layer decreases the electron schottky barrier between the Al and the organic interface, which enhances the electron injection into the organic layer from Al cathode and a considerable improvement of the device performance is observed. The turn-on voltage of the fabricated device with SAM layer was reduced by 6V, the brightness of the device was increased by 5 times and the external quantum efficiency is increased by 0.051%.

• Journal of Welding and Joining
• /
• v.16 no.1
• /
• pp.88-97
• /
• 1998

The surface characteristics of 13Cr stainless steel systems by plasma nitriding were investigated. The plasma nitriding for the 13Cr steels, in which the nitriding forming elements such as Ti, V, W, Nb, Al, Zr and Si were added about 2~3wt.%, respectively, was performed. In all nitrided specimens, .epsilon.-F $e_{2-3}$N, UPSILON.'-F $e_{4}$N and CrN were detected as the nitrides with the a-Fe in the nitrided layer. VN and .betha.- $W_{2}$N were also detected in 13Cr-3V and 13Cr-3W alloys. The growth of the nitrided layer was controlled by the diffusion process. The thickness of the nitrided layer was similar in the 13Cr-2Nb and 3Zr specimens to that of 13Cr(BM) specimen, while the others exhibited the thinner layer. The activation energy for the growth of the nitrided layer in the temperature range of 773-873K was about 130kJ/mol in 13Cr(BM), 13Cr-2Ti, 3W, 3Al, 3Zr and 3Si alloys. The hardness of the nitrided specimens was significantly increased above Hv1000, comparing to the non-nitrided specimen. The specimens with the nitrided forming elements revealed much higher hardness values and, especially, 13Cr-3Al, 3V and 3Si specimens were significantly hardened up to Hv1300.v1300.0.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.15 no.5
• /
• pp.554-562
• /
• 2015

This paper presents the design and analysis of gate-recessed AlGaN/GaN Fin-type Field-Effect Transistor (FinFET). The three-dimensional (3-D) technology computer-aided design (TCAD) simulations were performed to analyze the direct-current (DC) and radio-frequency (RF) characteristics for AlGaN/GaN FinFETs. The fin width ($W_{fin}$) and the height of GaN layer ($H_{GaN}$) are the design parameters used to improve the electrical performances of gate-recessed AlGaN/GaN FinFET.