• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.143-144
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• 2005

Recently, MIM(metal-insulator-metal) capacitor is one of the essential device for DRAM device. In this thesis, $Al_2O_3$ thin film which has a relatively high dielectric constant was deposited by ALD(atomic layer deposition) using MPTMA and $H_2O$ source. Deposition temperature of $Al_2O_3$ thin film was $200^{\circ}C$ and its thickness was 300 ${\AA}$. $RuO_2$ bottom electrode was deposited by RF-magnetron sputtering using $RuO_2$ target. The physical characteristics of $Al_2O_3$ films were investigated by AES, TEM and Ellipsometry. Electrical characteristics were analyzed by C-V and I-V measurement.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05b
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• pp.82-85
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• 2002

In recent years, the tantalum nitride(TaN) thin-film has been developed for the electronic resistor and capacitor. In this papers, this study presents the surface profile and sheet-resistance property relationship of reactive-sputtered TaN thin film resistor processed by buffer of Ti and Cr on alumina substrate. The TCR properties of the TaN films were discussed in terms of reactive gas ratio, ratio of nitrogen, crystallization and thin films surface morphology due to annealing temperature. It is clear that the TaN thin-films resistor electrical properties are low TCR related with it's buffer layer condition. Ti buffer layer thin film resistor having a good thermal stability and lower TCR properties then Cr buffer expected for the application to the dielectric material of passive component.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.6
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• pp.365-370
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• 2015

Zinc tin oxide transparent thin film transistors (ZTO TTFTs) were fabricated on oxidized $n^+$ Si wafers. The thickness of ~30 nm $Al_2O_3$ films were deposited on the oxidized Si wafers by atomic layer deposition, which acted as the gate insulators of ZTO TTFTs. The $Al_2O_3$ films were rapid-annealed at $400^{\circ}C$, $600^{\circ}C$, $800^{\circ}C$, and $1,000^{\circ}C$, respectively. Active layers of ZTO films were deposited on the $Al_2O_3/SiO_2$ coated $n^+$ Si wafers by rf magnetron sputtering. Mobility and threshold voltage were measured as a function of the rapid-annealing temperature. X-ray photoelectron spectroscopy (XPS) were carried out to observe the chemical bindings of $Al_2O_3$ films. The annealing effects of gate-insulator on the properties of TTFTs were analyzed based on the results of XPS.

• Korean Journal of Materials Research
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• v.14 no.3
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• pp.163-167
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• 2004

TiAl(La)N thin films were oxidized in vacuum of about 7 Pa to reduce the oxidation of WC-Co as a substrate. The oxidation rate constants of the thin films were quantified by an assumption of parabolic oxidation. Increasing AI content significantly decreased the parabolic oxidation rate constant. A simultaneous addition of AI and La was more effective to reduce the oxidation rate. The parabolic oxidation rate constant of $Ti_{0.66}$ $Al_{0.32}$ $La_{ 0.02}$N thin film at 1273 K showed about ten times lower than that of TiN. The addition of a small amount of La with Al induced the preferential formation of dense $\alpha$ $-Al_2$$O_3$ film in oxide film, leading to the abrupt reduction of oxidation rate.

• Journal of Sensor Science and Technology
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• v.7 no.5
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• pp.372-376
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• 1998

We developed a pulsed laser deposition(PLD) apparatus for depositing various thin films. In this study, the formation of $NbS_2$ thin film was performed in the vacuum chamber by PLD method. $Al_2O_3$(012) and Si(111) were used as the substrates. In order to investigate the growth conditions of a high crystalline $NbS_2$ thin film, the S/Nb composition ratio was varied from 2.0 to 5.25 and the substrate temperature was varied from the room temperature to $600^{\circ}C$. From the result of X-ray diffraction studies of the prepared $NbS_2$ thin films, it was reported that the $NbS_2$, thin film showed a good crystallinity at substrate temperature $600^{\circ}C$ and with S/Nb composition ratio 4.0 on $Al_2O_3$(012) but did not on Si(111). The films exhibited c-axis orientation.

• The Proceedings of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.11 no.3
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• pp.80-87
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• 1997

As a result of experimenting the temperature characteristics of origination voltage in Al/$AL_1,O_3/PI (nL)/Au, the sample of polyimide LB film and AI/$AL_1,O_3/Cls TCNQ(lOL)/Al, the difference of work function is found between upper and lower electrodes. If polyimide LB film is accumulated with Z type or becomes imide, the polarization of the film is not made. And AI/$AL_2,O_3/C-{15}TCNQ( IOL)/ AI which is the CI5 TCNQ LB film sample doesn't show the difference of work function because it has the same upper and lower electrode and the polarization is found on the film. As a result of experiment with MIM element of LB ultra thin film, Direct current more than hun¬dreds of m V is generated and it can be used for industrial power resources in the area of electricity, electronics and information communication.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.04b
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• pp.5-8
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• 2004

전자빔 증착법 (e-beam evaporation)를 이용하여 $TiO_2$ 박막과 $Al_2O_3/TiO_2$ 이중박막을 제조한 후, $800^{\circ}C$ 공기 중에서 열처리하여, 알루미나 층의 유무에 따른 두 박막의 전기전도 특성과 100 ppm CO 가스에 대한 반응 특성을 고찰하였다. 알루미나 층이 증착되지 않은 순수한 $TiO_2$ 박막의 전기 전도도 (in dry air)는 $100^{\circ}C-500^{\circ}C$ 온도범위에서 온도가 증가함에 따라 증가하였으며 알루미나 층이 증착된 $Al_2O_3/TiO_2$ 이중막보다 높은 전도도를 나타내고 있으나, 약 $300^{\circ}C$이상의 온도에서는 $Al_2O_3/TiO_2$ 이중막의 전기 전도도가 급격히 증가하여 $TiO_2$ 박막의 전기전도도 보다 더 높은 값을 나타내었다. 또한 온도에 따른 CO 가스 감도(sensitivity)는 $TiO_2$ 박막의 경우 $400^{\circ}C$까지는 서서히 증가하여 그 이상의 온도에서 급격히 감소하였으나, $Al_2O_3/TiO_2$ 이중막은 $250^{\circ}C$에서 감도가 급격히 증가하여 최대값을 나타내었으며, $350^{\circ}C$에서 감도가 급격히 감소하는 특성을 나타내었다.

• Progress in Superconductivity
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• v.9 no.1
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• pp.85-90
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• 2007

Lanthanum aluminate($LaAlO_3$) film has been prepared on single crystal and metal substrates by dip coating method. Lanthanum acetate and aluminum were prepared via ligand exchange starting from lanthanum nitrate hexahydrate and aluminum nitrate hexahydrate in acetate glacial acetic acid solution after being refluxed. Coating solution was obtained by diluting the gel with methanol and 2-methoxyethanol to adjust the total cation concentration to 0.67 M. Precursor coated film was prepared by dip-coating with a speed of 25 mm/min on various substrates such as $LaAlO_3$ (001), MgO(001), $SrTiO_3$(001) single crystal, LMO/MgO/Ni-alloy. Thin films have been obtained by heat treating the precursor film at various temperatures from $600^{\circ}C{\sim}900^{\circ}C$ and various heating rate from $0.83^{\circ}C/min{\sim}1.25^{\circ}C/min$ under $Ar/O_2$ mixture containing 1000ppm oxygen. The films have been characterized by scanning electronic microscopy (SEM) and X-ray diffraction (XRD). XRD analysis for the prepared film showed that $LaAlO_3$ thin films with a preferred orientation of (100) plane parallel to substrate surface were obtained at $800^{\circ}C(1.11\;^{\circ}C/min)$ on LMO/MgO/Ni-alloy substrate, but the intensity decreased with the increase of heat treatment temperature.

• 한국정보디스플레이학회:학술대회논문집
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• 2000.01a
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• pp.37-38
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• 2000

The ZnS:Tb thin-film electroluminescent devices were grown by atomic layer deposition with utilizing single-layer aluminum oxide and/or multilayered tantalum aluminum oxide, $Ta_xAl_yO$, as upper and lower insulating layers. These devices were investigated in terms of the luminescent and electrical characteristics. From this analysis, the devices using the $Ta_xAl_yO$ instead of $Al_2O_3$ were observed to have a lower threshold voltage for emission due to the higher relative dielectric constant of $Ta_xAl_yO$ insulators than that of the $Al_2O_3$ device. And there was a large amount of dynamic space charge generation in the phosphor of the device with the $Ta_xAl_yO$ insulators seemingly due to electron multiplication such as trap ionization.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.22-25
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• 2002

In this paper, we deposited MgO buffer layer on p-type (100)Si substrate in the condition of substrate temperature 400$^{\circ}C$, working gas ratio Ar:O$_2$=80:20, RF Power 50W, working pressure 10mtorr, and the thickness of the film was about 300${\AA}$. Then we deposited Ba$\sub$0.5/Sr$\sub$0.5/TiO$_3$ thin film using RF Magnetron sputtering method on the MgO/Si substrate in various RF power of 25W, 50W, 75W. The film deposited in 50W showed the best crystalline from the XRD measurement. To know the electrical properties of the film, we manufactured Al/BSTMgO(300${\AA}$)/Si/Al structure capacitor. In the result of I-V measurement, The leakage current density of the capacitor was lower than 10$\^$-7/A/$\textrm{cm}^2$ at the range of ${\pm}$150kV/cm. From C-V characteristics of the capacitor, can calculate the dielectric constant and it was 305. Finally we deposited BST thin film on bare Si substrate and (100)MgO substrate in the same deposition condition. From the comparate of the properties of these samples, we found the properties of BST thin film which deposited on MgO/Si substrate were better than on bare Si substrate and similar to on MgO substrate.