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http://dx.doi.org/10.4313/JKEM.2015.28.6.365

Annealing Effects of Gate-insulator on the Properties of Zinc Tin Oxide Transparent Thin Film Transistors  

Ma, Tae Young (Department of Electrical Engineering and ERI, Gyeongsang National University)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.28, no.6, 2015 , pp. 365-370 More about this Journal
Abstract
Zinc tin oxide transparent thin film transistors (ZTO TTFTs) were fabricated on oxidized $n^+$ Si wafers. The thickness of ~30 nm $Al_2O_3$ films were deposited on the oxidized Si wafers by atomic layer deposition, which acted as the gate insulators of ZTO TTFTs. The $Al_2O_3$ films were rapid-annealed at $400^{\circ}C$, $600^{\circ}C$, $800^{\circ}C$, and $1,000^{\circ}C$, respectively. Active layers of ZTO films were deposited on the $Al_2O_3/SiO_2$ coated $n^+$ Si wafers by rf magnetron sputtering. Mobility and threshold voltage were measured as a function of the rapid-annealing temperature. X-ray photoelectron spectroscopy (XPS) were carried out to observe the chemical bindings of $Al_2O_3$ films. The annealing effects of gate-insulator on the properties of TTFTs were analyzed based on the results of XPS.
Keywords
Zinc tin oxide; Transparent thin film transistors; Annealing; XPS;
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