• 열처리공학회지
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• 제29권6호
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• pp.272-276
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• 2016

Al doped ZnO (AZO) single layer and AZO/Ag bi-layered films were deposited on the glass substrates by radio frequency and direct current magnetron sputtering and then the effect of Ag buffer layer on the electrical and optical properties of the films was investigated. The thicknesses of AZO upper layer was kept as 100 nm, while Ag buffer layer was varied from 5 to 15 nm. The observed results mean that opto-electrical properties of the AZO films is influenced with Ag buffer layer and AZO film with 10 nm thick Ag buffer layer show the higher opto-electrical performance than that of the AZO single layer film prepared in this study.

• 한국전기전자재료학회논문지
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• 제25권1호
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• pp.44-47
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• 2012

The $TiO_2/Si_3N_4/Ag/Si_3N_4/TiO_2$ multi layered structure was designed for the possible application of transparent electrodes in PDP (Plasma Display Panel). Multi layered film was deposited on a glass substrate at room temperature by DC/RF magnetron sputtering system and EMP (Essential Macleod Program) was adopted to optimize the optical characteristics of film. During the deposition process, the Ag layer in $TiO_2/Ag/TiO_2$ became heavily oxidized and the filter characteristic was degraded easily. In thus study, Si3N4 layer was used as a diffusion buffer layer between $TiO_2$ and Ag. in order to prevent the oxidation of Ag layer in $TiO_2/Si_3N_4/Ag/Si_3N_4/TiO_2$ structure. It was confirmed that $Si_3N_4$ layer is one of candidate materials acting as diffusin barrier between $TiO_2/Ag/TiO_2$.

• 마이크로전자및패키징학회지
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• 제21권1호
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• pp.7-11
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• 2014

최근 유기태양전지의 효율향상을 위하여 고분자의 PEDOT:PSS 양극(Anode) 버퍼층이 널리 사용되고 있다. 그러나 고효율 태양전지의 개발과 더불어 새로이 적용되고 있는 역구조 유기 태양전지에는 이 같은 친수성의 PEDOT:PSS 고분자가 소수성의 양극이나 광활성층 상에 균일하게 코팅되는 것이 문제점으로 지적되고 있다. 이러한 문제점을 극복하기 위해서 양극 버퍼층으로 $V_2O_5$와 같은 p-type 금속산화물을 사용한 연구가 많이 보고되고 있다. 본 연구에서는 저항을 낮추고 홀 이동도를 향상 시키기 위해 Ag를 삽입층으로 한 $V_2O_5$/Ag/ITO 구조의 다층 박막을 제작하고 Ag두께에 따른 전기적, 광학적, 구조적 특성의 변화에 대하여 살펴보았다. 가시광 영역에서는 Ag 두께가 증가함에 따라 광 투과율이 감소하는 반면 전기적 특성은 향상되는 것을 볼 수 있었다. 광소자의 투명전극산화물로 적합한 구조인지 평가하기 위해 Figure Of Merit(FOM)의 값을 측정하였고, 그 결과 Ag의 두께가 4 nm에서 가장 좋은 특성을 나타냈다. $V_2O_5$/Ag/ITO 구조의 다층 박막은 가시광 영역에서 Ag의 두께가 4 nm일 때 88%의 광 투과율을 나타내었고 저항 값은 $4{\times}10^{-4}{\Omega}cm$로써 광소자로 적합한 구조임을 확인하였다.

• 한국세라믹학회지
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• 제37권4호
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• pp.381-387
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• 2000

Si3N4/stainless steel 316 joints with Ni buffer layer were fabricated by direct active brazing method (DIB) using Ag-Cu-Ti brazing alloy only and double brazing method (DOB) using Ag-Cu brazing alloy with Si3N4 pretreated with Ag-Cu-Ti brazing alloy. For the joint brazed by DIB method, Ti was segregated at the Si3N4/brazing alloy interface, but was not enough to form a stable joint interface. In addition, large amounts of Ni-Ti inter-metallic compounds were formed in tehbrazing alloy near the joint interface, which could deplete the contents of Ti involved in the interfacial reaction. However, for the joint brazed by DOB method, segregation of Ti at the joint interface were enough to enhance the formation of stable interfacial reaction products such as TiN and Ti-Si-Ni-N-(Cu) multicompounds, which restricted the formation of Ni-Tio inter-metallic compounds in the brazing alloy during brazing with Ni buffer layer. Fracture strength of Si3N4/S.S 316 joints with Ni buffer layer was much improved by using DOB method rather than DIB method. It could be deduced that the differences of fracture strength of the joint with Ni buffer layer depending on brazing process adapted were directly affected by the formation of stable joint interface and the change in microstructure of the brazing alloy near the joint interface. It was found that fracture strength of Si3N4/S.S 316 joints with Ni buffer layer was gradually reduced as the thickness of interface. It was found that fracture strength of Si3N4/S.S 316 joints with Ni buffer layer was gradually reduced as the thickness of Ni buffer layer in the joint was increased from 0.1 mm to 10 mm. It seems to due to the increased residual stress in the joint as the thickness of Ni buffer layer is increased. The maximum fracture strength of Si3N4/S.S 316 joints with Ni buffer layer was 386 MPa, and the fracture of joint was originated at Si3N4/brazing alloy joint interface and propagated into Si3N4 matrix.

• 열처리공학회지
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• 제27권5호
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• pp.230-234
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• 2014

IGZO/Ag bi-layered films were deposited on glass substrate at room temperature with radio frequency and direct current magnetron sputtering, respectively to consider the effect of Ag buffer layer on the electrical, optical and structural properties. For all deposition, while the thickness of Ag buffer layer was varied as 10, 15, and 20 nm, The thickness of IGZO films were kept at 100 nm, In a comparison of figure of merit, IGZO films with 15 nm thick Ag buffer layer show the higher figure of merit ($1.1{\times}10^{-2}{\Omega}^{-1}$) than that of the IGZO single layer films ($3.7{\times}10^{-4}{\Omega}^{-1}$). From the observed results, it is supposed that the IGZO 100 nm/Ag 15 nm bi-layered films may be an alternative candidate for transparent electrode in a transparent thin film transistor device.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.1557-1559
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• 2009

By using optimum doping ratio (10 ~ 20 wt%) of glycerol, the power conversion efficiency (PCE) of organic photovoltaic devices based on poly (3-hexylthiophene) and phenyl-$C_{61}$-butyric acid methyl ester was dramatically increased from 3.23% to 5.03%. Finally, semitransparent organic photovoltaic devices including glycerol doped poly (3,4-ethylenedioxy-thiophene):poly (styrene sulfonate) and thin Ag (< 1 nm) buffer layer typically have shown PCE > 3% with transmittance > 30% in visible ranges.

• 공업화학
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• 제27권5호
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• pp.512-515
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• 2016

새로운 viologen 유도체인 1,1'-bis(3,4-dihydroxybutyl)-[4,4'-bipyridine]-1,1'-diium bromide (V-Pr-2OH)을 합성하여 PTB7 : $PC_{71}BM$ Blend를 기반으로 하는 inverted polymer solar cells (iPSCs)에 cathode buffer layer로 적용하였다. V-Pr-2OH이 cathode buffer layer로 적용된 PSCs (ITO/V-Pr-2OH/PTB7 : $PC_{71}BM/MoO_3/Ag$)의 power conversion efficiency (PCE)는 7.28%이었다. V-Pr-2OH이 없는 iPSCs (ITO/ZnO/PTB7 : $PC_{71}BM/MoO_3/Ag$)의 PCE (7.41%)에 상응하는 값이다. 그러므로 본 연구에서는 높은 열처리 공정이 필요한 ZnO가 배제된, 즉 높은 온도의 열처리 없이도 제작 가능한 PSC에 대한 가능성을 보여주고 있다.

• 한국전기전자재료학회논문지
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• 제31권4호
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• pp.221-225
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• 2018

In this work, in order to effectively improve the electrical conductivity and visible light transmittance of ZnO thin films, ZnO single layer and ZnO/Ag bi-layer films were deposited on glass substrates by radio frequency and direct current magnetron sputtering, and then, the effects of an Ag buffer layer and electron beam irradiation on the electrical and optical properties of the films were investigated. The observed results indicate that ZnO 100 nm / Ag 7 nm films show higher opto-electrical performance than the ZnO single layer film. In addition, electron beam irradiation also effectively enhanced the visible transmittance and electrical conductivity of the ZnO/Ag bi-layer films.

• 한국전기전자재료학회논문지
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• 제28권1호
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• pp.7-11
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• 2015

In this study, $Si_3N_4$/SnZnO/AZO/Ag/Ti/ITO multi-layer film were prepared on glass substrate by DC/RF magnetron sputtering method. To prevent interfacial reaction between Ag and ITO layer, Ti buffer layer was inserted. Optical properties and sheet resistance were studied depending on laminating times of each multi-layered film especially in visible ray. The simulation program, EMP (essential macleod program), was adopted and compared with experimental data to expect the experimental result. It was found out that the transmittance of the first stacked $Si_3N_4$/SnZnO/AZO/Ag/Ti/ITO multi-layer film was more than 90%. However, with increasing stacking times, the optical properties of $Si_3N_4$/SnZnO/AZO/Ag/Ti/ITO multi-layer film get worse. Consequently, Ti layer is good for oxidation barrier, but too many uses of this layer may have an adverse effect to optical properties of TCO film.

• 한국전기전자재료학회논문지
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• 제30권10호
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• pp.609-614
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• 2017

The proposed stretchable transparent electrodes based on silver nanowires (AgNWs) were prepared on a polyurethane (PU) substrate. In order toavoid the surface roughness caused by the silver nanowires, a titanium oxide ($TiO_2$) buffer layer was addedby coating and heating the organometallic sol-gel solution. The fabricated stretchable electrodes showedan electrical sheet resistance of $24{\Omega}sq^{-1}$, 78% transmittance at 550 nm, and an average surface roughness below 5 nm. Furthermore, the AgNW-based electrode maintained its initial electrical resistance under 130% strain testing conditions, without the assistance of additional conductive polymer layers. In this paper, the critical role of the $TiO_2$ buffer layer between the AgNW network and the PU substrate has been discussed.