Browse > Article
http://dx.doi.org/10.4313/JKEM.2012.25.1.44

Effect of Si3N4 Buffer Layer on Transmittance of TiO2/Si3N4/Ag/Si3N4/TiO2 Multi Layered Structure  

Lee, Seo-Hee (Department of Materials Engineering, Chungbuk National University)
Jang, Gun-Eik (Department of Materials Engineering, Chungbuk National University)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.25, no.1, 2012 , pp. 44-47 More about this Journal
Abstract
The $TiO_2/Si_3N_4/Ag/Si_3N_4/TiO_2$ multi layered structure was designed for the possible application of transparent electrodes in PDP (Plasma Display Panel). Multi layered film was deposited on a glass substrate at room temperature by DC/RF magnetron sputtering system and EMP (Essential Macleod Program) was adopted to optimize the optical characteristics of film. During the deposition process, the Ag layer in $TiO_2/Ag/TiO_2$ became heavily oxidized and the filter characteristic was degraded easily. In thus study, Si3N4 layer was used as a diffusion buffer layer between $TiO_2$ and Ag. in order to prevent the oxidation of Ag layer in $TiO_2/Si_3N_4/Ag/Si_3N_4/TiO_2$ structure. It was confirmed that $Si_3N_4$ layer is one of candidate materials acting as diffusin barrier between $TiO_2/Ag/TiO_2$.
Keywords
$TiO_2/Si_3N_4/Ag/Si_3N_4/TiO_2$; Buffer layer; TCO; PDP filter;
Citations & Related Records
Times Cited By KSCI : 2  (Citation Analysis)
연도 인용수 순위
1 H. Ohsaki and Y. Kokubu, Thin Solid Films, 351, 1 (1999).   DOI   ScienceOn
2 M. Fhaland, P. Karlsson, and C. Charton, Thin Solid Films, 392, 334 (2001).   DOI
3 M. Bender, W. Seeling, C. Daube, H. Frankenberger, B. Ocker, and J. Stollenwerk, Thin Solid Films, 326, 67(1998).   DOI
4 D. Kim, Trans. Electr. Electron. Mater., 10, 165 (2009).   과학기술학회마을   DOI
5 J. H. Lee, S. H. Lee, and C. K. Hwangbo, J. Korean Phys. Soc., 44, 750 (2004).   DOI
6 W. S. Oh, S. H. Lee, G. E. Jang, and S. W. Park, J. KIEEME, 23, 681 (2010).   과학기술학회마을   DOI