• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.16 no.8 s.99
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• pp.815-824
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• 2005

In this paper, we proposed a new DGS(Defected Ground Structure) Doherty amplifier for IMT-2000 band. Originally, active load-pull analysis of a Doherty amplifier assumes ideal harmonic termination condition. However, there have been no papers considering this ideal harmonic termination condition. We obtained excellent improvements of efficiency, gain, maximum output power as well as superior size reduction of a Doherly amplifier by satisfying the overlooked assumption of ideal harmonic termination through the adaptation of DGS at the output transmission line of carrier and peaking amplifier that is essential for Doherty operation. The amount of both the 2nd and the 3rd harmonic rejection of the proposed DGS Doherty amplifier over the conventional one are 44.92 dB and over 23.77 dB, respectively. The acquired improvement in Pl dB, gain, drain efficiency, and ACPR to WCDMA 1FA signal were 0.42 dB, 0.33 dB, $6.4\%$ and 5.4 dBc, respectively. Moreover, electrical length of $90{\circ}$ is reduced at each of the DGS carrier amplifier path and DGS peaking amplifier path, therefore the whole amplifier circuit size is considerably reduced.

• Journal of the Institute of Electronics and Information Engineers
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• v.50 no.7
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• pp.115-121
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• 2013

We fabricated thin film transistors (TFTs) using TiInZnO(TiIZO) thin films as active channel layer. The thin films of TiIZO were deposited at room temperature by RF-magnetron co-sputtering system from InZnO(IZO) and Ti targets. We examined the effects of titanium addition by X-ray diffraction, X-ray photoelectron spectroscopy and the electrical characteristics of the TFTs. The TiIZO TFTs were investigated according to the radio-frequency power applied to the Ti target. We found that the transistor on-off currents were greatly influenced by the composition of titanium addition, which suppressed the formation of oxygen vacancies, because of the stronger oxidation tendency of Ti relative to that of Zn or In. A optimized TiIZO TFT with rf power 40W of Ti target showed good performance with an on/off current ratio greater than $10^5$, a field-effect mobility of 2.09 [$cm^2/V{\cdot}s$], a threshold voltage of 2.2 [V] and a subthreshold swing of 0.492 [V/dec.].

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.41 no.10
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• pp.109-117
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• 2004

In this paper, a K-band local oscillator composed of a VCDRO(Voltage Controlled Dielectric Resonator Oscillator), GaAs MESFET, and Reflector type frequency doubler has been designed and fabricated. TO obtain a good phase noise performance of a VCDRO, a active device was selected with a low noise figure and a low flicker noise MESFET and a dielectric resonator was used for selecting stable and high oscillation frequency. Especially, to have a higher conversion gain than a conventional doubler as well as a good harmonic suppression performance with circuit size reduced a doubler structure was employed as the Reflector type composed of a reflector and a open stub of quarter wave length for rejecting the unwanted harmonics. The measured results of fabricated oscillator show that the output power was 5.8 dBm at center frequency 12.05 GHz and harmonic suppression -37.98 dBc, Phase noise -114 dBc at 100 KHz offset frequency, respectively, and measured results show of fabricated frequency doubler, the output power at 5.8 dBm of input power is 1.755 dBm conversion gain 1.482 dB, harmonic suppression -33.09 dBc, phase noise -98.23 dBc at 100 KHz offset frequency, respectively. This oscillator could be available to a local oscillator in K-band which used frequency doubler techniques.

• The Transactions of the Korean Institute of Power Electronics
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• v.8 no.1
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• pp.70-79
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• 2003

In this paper, T5 28-watt fluorescent lamp ballast using a piezoelectric transformer is fabricated and its characteristic is investigated. Developed electronic ballast is composed of basic circuits and blocks, such as rectifier part, active power factor corrector part, frequency oscillation part using microcontroller and feedback control, piezoelectric transformer and resonant half bridge inverters. The fabricated ballast uses to variable frequency methode in external so exciting that the frequency of piezoelectric transformer could be generated by voltage control oscillator using microcontroller(AT90S4433). The current of fluorescent lamp is detected by feedback control circuit. The signal of inverter output is received using Piezoelectric transformer, and then its output transmitted to fluorescent lamp. Traditional electromagnetic ballasts operated at 50-60Hz have been suffered from noticeable flicker, high loss, large crest factor and heavy weight. A new electronic ballast is operated at high frequency about 75kHz, and then Input power factor, distortion of total harmonic and lamp current crest factor are measured about 0.9!35, 12H and 1.5, respectively Accordingly, the traditional ballast is by fabricated electronic ballast using piezoelectric transformer and voltage control oscillator because of its lighter weight, high efficiency, economic merit and saving energy.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.4
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• pp.39-50
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• 2011

In this paper, we presents a CDR circuit for $2^{nd}$-generation AiPi+, one of the Intra-panel Interface. The speed of the proposed clock and data recovery is increased to 1.25 Gbps compared with that of AiPi+. The DLL-based CDR architecture is used to generate the multi-phase clocks. We propose the simple scheme for frequency detector (FD) to mitigate the harmonic-locking and reduce the complexity. In addition, the duty cycle corrector that limits the maximum pulse width is used to avoid the problem of missing clock edges due to the mismatch between rising and falling time of VCDL's delay cells. The proposed CDR is implemented in 0.18 um technology with the supply voltage of 1.8 V. The active die area is $660\;{\mu}m\;{\times}\;250\;{\mu}m$, and supply voltage is 1.8 V. Peak-to-Peak jitter is less than 15 ps and the power consumption of the CDR except input buffer, equalizer, and de-serializer is 5.94 mW.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.22 no.11
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• pp.1034-1046
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• 2011

In this paper, a design and fabrication of 40 W power amplifier for the X-band using load-pull measurement of GaN HEMT chip are presented. The adopted active device for power amplifier is GaN HEMT chip of TriQuint company, which is recently released. Pre-matched fixtures are designed in test jig, because the impedance range of load-pull tuner is limited at measuring frequency. Essentially required 2-port S-parameters of the fixtures for extraction optimal input and output impedances is obtained by the presented newly method. The method is verified in comparison of the extracted optimal impedances with data sheet. The impedance matching circuit for power amplifier is designed based on EM co-simulation using the optimal impedances. The fabricated power amplifier with 15${\times}$17.8 $mm^2$ shows the efficiency above 35 %, the power gain of 8.7~8.3 dB and the output power of 46.7~46.3 dBm at 9~9.5 GHz with pulsed-driving width of 10 usec and duty of 10 %.

• Journal of the Korean Vacuum Society
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• v.22 no.1
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• pp.37-44
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• 2013

In order to investigate an influence of carrier trap by quantum dots (QDs) on the solar parameters, in this study, the $p^+-QD-n/n^+$ solar cells with InAs/GaAs QD active layers are fabricated, and their characteristics are investigated and compared with those of a GaAs matrix solar cell (MSC). Two different types of QD structures, the Stranski-Krastanow (SK) QD and the quasi-monolayer (QML) QD, have been introduced for the QD solar cells, and the parameters (open-circuit voltage ($V_{OC}$), short-cirucuit current ($I_{SC}$), fill factor (FF), conversion efficiency (CE)) are determined from the current-voltage characteristic curves under a standard solar illumination (AM1.5). In SK-QSC, while FF of 80.0% is similar to that of MSC (80.3%), $V_{OC}$ and $J_{SC}$ are reduced by 0.03 V and $2.6mA/cm^2$, respectively. CE is lowered by 2.6% as results of reduced $V_{OC}$ and $J_{SC}$, which is due to a carrier trap into QDs. Though another alternative structure of QML-QD to be expected to relieve the carrier trap have been firstly tried for QSC in this study, it shows negative results contrary to our expectations.

• Journal of the Korea institute for structural maintenance and inspection
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• v.15 no.3
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• pp.134-141
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• 2011

There have been increased economic and societal demands to continuously monitor the integrity and long-term deterioration of civil infrastructures to ensure their safety and adequate performance throughout their life span. However, it is very difficult to continuously monitor the structural condition of the pipeline structures because those are placed underground and connected each other complexly, although pipeline structures are core underground infrastructures which transport primary sources. Moreover, damage can occur at several scales from micro-cracking to buckling or loose bolts in the pipeline structures. In this study, guided wave measurement can be achieved with a self-sensing circuit using a piezoelectric active sensor. In this self sensing system, a specific frequency-induced structural wavelet response is obtained from the self-sensed guided wave measurement. To classify the multiple types of structural damage, supervised learning-based statistical pattern recognition was implemented using the damage indices extracted from the guided wave features. Different types of structural damage artificially inflicted on a pipeline system were investigated to verify the effectiveness of the proposed SHM approach.

• Journal of the Korean Society of Marine Environment & Safety
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• v.21 no.6
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• pp.759-769
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• 2015

Diode rectifiers are very popular in industry. However, they include large low-order harmonics in the input current and do not satisfy harmonic current content restrictions. To reduce the harmonics to the power system, several methods have been introduced. It is heavy and expensive solution to use passive filters as the solution for high power application. Another solution for the harmonic filter is utilization of active filter, but it is too expensive solution. Diode rectifiers with configurations using switching device have been introduced, but they are very complicated. The combined 12-pulse diode rectifier with the square auxiliary voltage supply has been introduced. It has the advantages that auxiliary circuit is simple and inexpensive compared to other strategies. The advanced auxiliary voltage supply in this thesis is presented as a new solution. When the square auxiliary voltage supply applied, the improvement of THD is 6~60[%] in whole load range. But when the advanced auxiliary voltage supply applied, it shows stable and excellent reduction effect of THD as 57~71[%]. Especially, for the case with 10[%] load factor, reduction effect of THD has little effect as 6[%] in the case of inserting a square auxiliary voltage supply. But when the proposed new solution applied, reduction effect has excellent effect as 71[%]. Theoretical analysis of the combined 12-pulse diode rectifier with the advanced auxiliary voltage supply is presented and control methods of the auxiliary supply is proposed. The reduction in the input current harmonics is verified by simulation using software PSIM.

• Journal of Navigation and Port Research
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• v.27 no.2
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• pp.209-215
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• 2003

In this paper. We tested and fabricated the error amplifier for the 15 Watt linear power amplifier for the IMT-2000 baseband station. The error amplifier was comprised of subtractor for detecting intermodulation distortion, variable attenuator for control amplitude, variable phase shifter for control phase, low power amplifier and high power amplifier. This component was designed on the RO4350 substrate and integrated the aluminum case with active biasing circuit. For suppression of spurious, the through capacitance was used. The characteristics of error amplifier measured up to 45 dB gain, $\pm$0.66 dB gain flatness and -15 dB input return loss. Results of application to the 15 Watt feedforward Linear Power Amplifier, the error amplifier improved with 27 dB cancellation from 34 dBc to 61 dBc IM$_3$.