Browse > Article
http://dx.doi.org/10.5515/KJKIEES.2011.22.11.1034

Design of X-band 40 W Pulse-Driven GaN HEMT Power Amplifier Using Load-Pull Measurement with Pre-matched Fixture  

Jeong, Hae-Chang (Department of Radio Science and Engineering, Chungnam National University)
Oh, Hyun-Seok (Department of Radio Science and Engineering, Chungnam National University)
Yeom, Kyung-Whan (Department of Radio Science and Engineering, Chungnam National University)
Jin, Hyeong-Seok (LIG Nex1)
Park, Jong-Sul (U-tel Research and Development Center)
Jang, Ho-Ki (U-tel Research and Development Center)
Kim, Bo-Kyun (U-tel Research and Development Center)
Publication Information
The Journal of Korean Institute of Electromagnetic Engineering and Science / v.22, no.11, 2011 , pp. 1034-1046 More about this Journal
Abstract
In this paper, a design and fabrication of 40 W power amplifier for the X-band using load-pull measurement of GaN HEMT chip are presented. The adopted active device for power amplifier is GaN HEMT chip of TriQuint company, which is recently released. Pre-matched fixtures are designed in test jig, because the impedance range of load-pull tuner is limited at measuring frequency. Essentially required 2-port S-parameters of the fixtures for extraction optimal input and output impedances is obtained by the presented newly method. The method is verified in comparison of the extracted optimal impedances with data sheet. The impedance matching circuit for power amplifier is designed based on EM co-simulation using the optimal impedances. The fabricated power amplifier with 15${\times}$17.8 $mm^2$ shows the efficiency above 35 %, the power gain of 8.7~8.3 dB and the output power of 46.7~46.3 dBm at 9~9.5 GHz with pulsed-driving width of 10 usec and duty of 10 %.
Keywords
GaN HEMT; Power Amplifier Module; Load-Pull Measurement; Pre-Match; Fixture De-Embedding;
Citations & Related Records
Times Cited By KSCI : 4  (Citation Analysis)
연도 인용수 순위
1 U. K. Mishra, P. Parikh, and Wu Yi-Feng, "Al-GaN/ GaN HEMTs-an overview of device operation and applications", Proc. of IEEE, vol. 90. no. 6, pp. 1022-1031, Jun. 2002.   DOI
2 TGF2023-10, "50 watt discrete power GaN on SiC HEMT", TriQuint Semiconductor, Available: http://triquint.com/
3 C580274C, Leaded Power Amplifier Package, Stratedge, Available: http://stratedge.com/
4 Design Guidelines, "ATC custom thin film products", American Technical Ceramics, Available: http://atceramics.com/
5 MT982EU30, "7 mm automated tuners", Maury Microwave, Available: http://maurymw.com/
6 Operating Manual, "Automated tuner system", Maury Microwave, Available: http://maurymw.com/
7 김민수, 이춘성, 이상록, 이영철, "X-대역 펄스압축 Solid State Radar를 위한 200W SSPA 개발", 대한전자공학회지, 46(12), pp. 22-29, 2009년 12 월.   과학기술학회마을
8 정민길, 나형기, "레이더용 X-대역 63 watt pulsed SSPA 개발", 한국전자파학회논문지, 22(3), pp. 380- 388, 2011년 3월.   과학기술학회마을   DOI
9 신석우, 김형종, 최길웅, 최진주, 임병옥, 이복형, "X-대역 GaN HEMT Bare-Chip 펄스-전압 펄스- RF 수동 로드-풀 측정", 한국ITS학회논문지, 10 (1), pp. 42-48, 2011년 2월.   과학기술학회마을
10 Y. Yamashita, T. Nakata, T. Kumamoto, R. Suzuki, and M. Tanabe, "X-band GaN HEMT advanced power amplifier unit for compact active phased array antennas", ICCAS-SICE, pp. 3047-3050, 2009.
11 정해창, 오현석, 허윤성, 염경환, 김경민, "Wi- MAX 대역 GaN HEMT 4 W 소형 전력증폭기 모듈 설계", 한국전자파학회논문지, 22(2), pp. 162- 172, 2011년 2월.   과학기술학회마을   DOI
12 K. Kanto, A. Satomi, Y. Asahi, Y. Kashiwabara, K. Matsushita, and K. Takagi, "An X-band 250W solid- state power amplifier using GaN power HEMTs", Radio and Wireless Symposium, pp. 77-80, 2008.
13 M. Casto, M. Lampenfeld, J. Pengcheng, P. Courtney, S. Behan, P. Daughenbaugh, and R. Worley, "100 W X-band GaN SSPA for medium power TWTA replacement", Wireless and Microwave Technology Conference, pp. 1-4, 2011.
14 M. S. Hashmi, F. M. Ghannouchi, P. J. Tasker, and K. Rawat, "High reflective load-pull", Microwave Magazine, vol. 12, pp. 96-107, Jun. 2011.
15 G. Simpson, R. Pollard, "Automated microwave tuner system simplifies transistor characterization", ARFTG Conference, vol. 11, pp. 66-89, 1987.