• 설비공학논문집
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• 제5권1호
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• pp.55-64
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• 1993

A numerical investigation has been carried out for the two-dimensional flow and pressure characteristics in a clean room equipped with two kinds of filters and four access panels. The distributed pressure resistance concept was applied to describe the momentum loss in filters and access panels. As a result, the velocity profile in the clean room became rather smooth by the presence of access panels. Furthermore, the average pressure drop of each access panel reached the same value so that the ratio of the flow rate should be the same at any zone. The closing of an access panel with maintaining the other access panels being opened had influenced on the velocity distribution in lower two thirds of left half space of the clean room.

• Applied Microscopy
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• 제42권4호
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• pp.207-211
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• 2012

We examined the electrical properties and microstructure of NiO produced using a sol-gel method and Ni nitrate hexahydrate ($Ni[NO_3]_2{\cdot}6H_2O$) to investigate if this NiO thin film can be used as an insulator layer for resistance random access memory (ReRAM) devices. It was found that as-prepared NiO film was polycrystalline and presented as the nonstoichiometric compound $Ni_{1+x}O$ with Ni interstitials (oxygen vacancies). Resistances-witching behavior was observed in the range of 0~2 V, and the low-resistance state and high-resistance state were clearly distinguishable (${\sim}10^3$ orders). It was also demonstrated that NiO could be patterned directly by KrF eximer laser irradiation using a shadow mask. NiO thin film fabricated by the sol-gel method does not require any photoresist or vacuum processes, and therefore has potential for application as an insulating layer in low-cost ReRAM devices.

• 대한기계학회논문집
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• 제17권8호
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• pp.2110-2121
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• 1993

A numerical investigation has been carried out for the flow characteristics after exchange of some filters from the original layer to the new low pressure loss layer with equal filtering efficiency. The solution domain includes upper plenum, filter layer, clean space, access panels, and lower plenum. The concept of the distributed pressure resistance was applied to describe the momentum loss in filter layer and access panels. The evolution of the flow field is simulated using the low Reynolds number k-.epsilon. over bar turbulent model and SIMPLE algorithm based on the finite volume method. As a result, after the exchange of filter layer the power requirement can be reduced by 8-9 percent. The results also demonstrate that the perpendicularity of the flow near access panels may become worse at new filter layer than origianl filter layer. But the situation can be recovered by adjusting the jopening ratio of access panels.

• 전기전자학회논문지
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• 제17권3호
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• pp.229-233
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• 2013

We investigated electrical conduction and resistance switching behavior of the Ag/ZnO/Ti structures for random access memory devices. These films were prepared on glass substrate by dc sputtering technique at room temperature. The resistance switching follows unipolar switching mode with small switching voltages (0.4 V - 0.6 V). Two electrical conduction mechanisms dominating the LRS and HRS are Ohmic and trap-controlled space charge limited current, respectively. These both conductions are consistent with the filamentary model. Based on the filamentary model, the switching mechanism was also interpreted.

• 마이크로전자및패키징학회지
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• 제30권3호
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• pp.83-87
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• 2023

전자 및 반도체 기술 분야에서는 Si를 대체할 혁신적인 반도체 소재 연구가 활발하게 진행 중이다. 그러나 대체 소재에 대한 연구는 진행 중이지만 2차원 물질을 채널로 사용하는 트랜지스터의 구성요소, 특히 기생 저항과 RF(고주파) 응용 프로그램과의 관계에 대한 연구는 매우 부족한 편이다. 본 연구는 이러한 부족한 부분을 메우기 위해 다양한 트랜지스터 구조에 중점을 두고 전기적 성능에 미치는 영향을 체계적으로 분석하였다. 연구 결과, Access 저항과 Contact 저항이 반도체 소자 성능 저하의 주요 요인 중 하나로 작용함을 확인하였으며, 특히 고도로 scaling down된 경우 그 영향이 더욱 두드러지는 것을 확인하였다. 고주파 RF 소자에 대한 수요가 계속해서 증가함에 따라 원하는 RF 성능을 달성하기 위한 소자 구조 및 구성 요소를 최적화하기 위한 가이드라인을 수립하는 것은 매우 중요하다. 본 연구는 2차원 물질을 채널로 사용하는 다음 세대 RF 트랜지스터의 설계 및 개발에 도움이 될 수 있는 구조적 가이드라인을 제공함으로써 이 목표에 기여할 수 있다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.69-70
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• 2006

A detailed Investigation of cell structure and electrical characteristic in chalcogenide-based phase-change random access memory(PRAM) devices is presented. We used compound of Ge-Sb-Te material for phase-change cell. A novel bottom electrode structure and manufacture are described. We used heat radiator structure for improved reset characteristic. A resistance change measurement is performed on the test chip. From the resistance change, we could observe faster reset characteristic.

• JSTS:Journal of Semiconductor Technology and Science
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• 제2권3호
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• pp.197-204
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• 2002

DRAM, SRAM, and FLASH memory are three major memory devices currently used in most electronic applications. But, they have very distinct attributes, therefore, each memory could be used only for limited applications. MRAM (Magneto-resistive Random Access Memory) is a promising candidate for a universal memory that meets all application needs with non-volatile, fast operational speed, and low power consumption. The simplest architecture of MRAM cell is a series of MTJ (Magnetic Tunnel Junction) as a data storage part and MOS transistor as a data selection part. To be a commercially competitive memory device, scalability is an important factor as well. This paper is testing the actual electrical parameters and the scaling factors to limit MRAM technology in the semiconductor based memory device by an actual integration of MRAM core cell. Electrical tuning of MOS/MTJ, and control of resistance are important factors for data sensing, and control of magnetic switching for data writing.

• 대한치과의사협회지
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• 제56권10호
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• pp.572-580
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• 2018

Adequate access cavity is the key to achieving endodontic success. The aims of the access cavity can be considered as follows: 1) Creation of a smooth unimpeded pathway for instruments to canal orifices 2) Removal of the entire roof of the pulp chamber in order to inspect the pulp floor, 3) Preservation of natural tooth substance consistent with the above. Recently, contracted endodontic cavities based on minimally invasive endodontics has introduced. This has the benefit of preserving the pericervical dentin more than traditional access cavity with achieving long-term success. However, some studies reported controversial results regarding root canal detection, instrumentation efficacy (noninstrumented canal area, hard tissue debris accumulation, canal transportation, and centering ratio) as well as fracture resistance. Therefore, further studies are required for accepting contracted access cavity, and modified form of traditional and contracted access cavity could be considered.

• Journal of Communications and Networks
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• 제8권1호
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• pp.21-27
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• 2006

We present and analyze a class of limited sensing random access algorithms with powerful properties. The algorithms are implementable in wireless mobile environments and their operational properties are simple. Their throughput in the worst case of the limit Poisson user model is 0.4297, while this throughput degrades gracefully in the presence of channel feedback errors.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 1999년도 하계종합학술대회 논문집
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• pp.950-953
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• 1999

Spin tunneling giant magnetoresistance effect was studied to utilize in the application of random access memory. Ferromagnetic/Insulator/Ferromagnetic films were sputtered on glass substrates and perpendicular current was applied. Measurements of magneto- resistance of the junction showed 8.6% of MR ratio. Voltage output depends on the magnetization directions of the write line and read line, thus enabling the system to be used as a random access memory